Abstract: A crucible with 22 inches or more in inner diameter, which has a small deformation of the body under exposure to abundant heat radiation during pulling a single crystal, and which has no practical problem, and a method of producing the same are disclosed.

Abstract: A large diameter quartz crucible with an inner diameter of 22 inches or more comprises an opaque silica glass outer layer having bubbles of 10 .mu.m to 250 .mu.m in diameter and 5 mm to 20 mm in thickness and a transparent silica glass inner layer having 0.5% or less in a bubble content and 0.3 mm or more in thickness which is molten and integrated with an inner surface of the outer layer. The outer layer has an OH group concentration of 80 ppm or less and the gas pressure in a bubble in the outer layer is lower than atmospheric pressure so that a volume expansion ratio of the bubble is minimized when being heated in condition of pulling a single crystal.

Abstract: A quartz glass crucible for use in a process for pulling a single crystal silicon and having an outer layer and an inner layer. The outer layer contains less than 0.3 ppm each of Na, K and Li and more thant 5 ppm of Al. The outer layer further contains bubbles to present an opaque appearance. The inner layer is made by melting powders of high purity non-crystalline synthetic silica and contains less then 200 ppm of OH group. There is also disclosed a method for producing the crucible.

Abstract: A silicon thin film is composed of primarily silicon atoms, 0 to 8 atm % hydrogen, at least one element selected from the group including fluorine, chlorine, bromine and iodine, and an impurity element, wherein about 80 to 100% of microcrystalline grains are interspersed in an amorphous phase. The thin film is produced by deposition on a substrate in a plasma atmosphere using as a raw material gas silane (SiH.sub.4) or halogenated silane (SiH.sub.o--3 X.sub.4--1) wherein X represents a halogen or a combination of two or more halogens, and a dopant gas mixed with the raw material gas. The method comprises the steps of: (1) diluting the mixed gas with hydrogen in a ratio of the diluting gas to the raw material gas of from 50:1 to 100:1, to control the film deposition rate to produce a layer including mixed crystalline and amorphous substances; and (2) applying an electric power to provide a plasma discharge power density of from 0.1 to about 0.5 W/cm.sup.2, at a reaction pressure of 5 to 10 torr.

Abstract: A quartz glass crucible adapted for use in a process for pulling a single crystal semiconductor material having an opaque outer substrate of a quartz glass with a relatively high bubble content and an inner transparent glass layer which is substantially free from bubbles. The crucible is produced while the substrate is supported by a rotating mould by forming an atmosphere of high temperature gas and supplying a metered quantity of powders of quartz to the high temperature gas atmosphere to have the quartz powders molten at least partly and directed toward an inner surface of the substrate to be adhered thereon.

Abstract: A quartz glass crucible adapted for use in a process for pulling a single crystal semiconductor material having an opaque outer substrate of a quartz glass with a relatively high bubble content and an inner transparent glass layer which is substantially free from bubbles. The crucible is produced while the substrate is supported by a rotating mould by forming an atmosphere of high temperature gas and supplying a metered quantity of powders of quartz to the high temperature gas atmosphere to have the quartz powders molten at least partly and directed toward an inner surface of the substrate to be adhered thereon.

Abstract: A vapor phase synthesis of carbon film and carbon particles using a single or a mixed gas capable of supplying halogen, hydrogen and carbon atoms is disclosed. Halogen radicals can suppress the desorption of carbon atoms from the substrate, and the carbon layer is obtained easily. Especially chlorine and fluorine atoms are effective. An electron beam diffraction pattern illustrated that diamond film can be obtained in this method.

Abstract: This invention discloses a new semiconductor device having no step type p-i-n juctions but rather has a graded p-i-n juction. The semiconductor device shows a high photoelectric conversion efficiency, and since said device can be produced easily with good reproducibility by a plasma discharge method, it is especially suited for use as a solar battery. An apparatus for the production of said semiconductor device is also disclosed.

Abstract: This invention disclose an amorphous silicon semiconductor film containing at least hydrogen, carbon and oxygen as impurities and the method to produce it. The film is characterized in that the total quantity of carbon and oxygen in said film is at least 0.1 atom %. Since the film has small light absorption coefficient and its optical refractive index is controllable, an excellent window material for solar cell can be provided. Since adherence of the film with a metal electrode as well as with a transparent electrode is sufficient, good reproducibility in making solar cells using the film of this invention as a window material was realized.

Abstract: This invention discloses an amorphous silicon semiconductor film comprising at least hydrogen, nitrogen, and oxygen as impurities and the method of producing it. The film is characterized in that the total quantity of nitrogen and oxygen in said film is at least 1 atom %. Since the film has a small light absorption coefficient and its optical refractive index is controllable, an excellent window material for solar cell can be provided. As adherence of the film with a metal electrode as well as with a transparent electrode is sufficient, good reproducibility in making solar cells using the film of this invention as window material was realized.