Abstract: A fluorine-containing precoating is formed to cover a phosphor particle by, for example, a physical vapor deposition of a fluoride. Then, a fluorine-containing coating covering the phosphor particle is formed by supplying fluorine into the precoating. This obtained phosphor particle with the coating is applied in the form of a paste to a substrate on each electrode between two adjacent ribs to form a phosphor layer including phosphor particles between the ribs on the substrate. The substrate is positioned with respect to another substrate having electrodes thereon to form discharge spaces between the substrates. The discharge spaces are filled with a discharge gas to produce a plasma display panel.

Abstract: In a state that a plate-shaped insulator is disposed adjacent to a plate-shaped electrode, a discharge gas containing an inert gas is supplied to a vicinity of a processing object from one gas exhaust port located nearer from the plate-shaped electrode, out of at least two-line gas exhaust ports which are disposed around the plate-shaped electrode and which are formed so as to be surrounded by the plate-shaped insulator and moreover which are different in distance to the plate-shaped electrode from each other, while a discharge control gas is supplied from the other gas exhaust port to the vicinity of the processing object. Simultaneously with the supply of the gases, electric power is supplied to the plate-shaped electrode or the processing object, by which plasma processing of the processing object is carried out. Thus, plasma processing method and apparatus capable of processing for desired fine linear portions with high precision are provided.

Abstract: The present invention relates to a flat panel display having high picture quality, high flexibility and high flex-resistance. Specifically, the present invention provides a flat panel display having a plurality of pixels arranged in a matrix shape on a substrate, each of the plurality of pixels comprising a thin film transistor having a channel region containing nanowire, nanorod, nanoribbon, or nanotube, and a display element driven by the thin film transistor. Here, an axial direction of the nanowire, nanorod, nanoribbon, or nanotube is in the same direction as the source-drain direction of a channel region and the flat panel display can be bent so as to intersect with the source-drain direction.

Abstract: An electronic part processing method for peeling off a resin coating of an electronic part having a terminal section. The method includes a step of irradiating, with plasma, a coated wire having copper as a principal constituent and a surface coated with a resin.

Abstract: There are provided a PDP having a higher luminous efficiency and a process for producing the same. In a plasma display panel filled with a discharge gas between a front plate and a rear plate opposed to each other, the front plate 100 comprises a glass substrate 1, electrodes 2 (transparent electrodes 2a and bus electrodes 2b) on the glass substrate 1, the first dielectric layer 4 covering the electrodes 2 and the glass substrate 1 and containing a fluorine atom, the second dielectric layer 5 covering the first dielectric layer 4 and containing a fluorine atom at a less amount than that in the first dielectric layer 4, and a protective layer 6 covering the second dielectric layer 5.

Abstract: In a state that a plate-shaped insulator is disposed adjacent to a plate-shaped electrode, a discharge gas containing an inert gas is supplied to a vicinity of a processing object from one gas exhaust port located nearer from the plate-shaped electrode, out of at least two-line gas exhaust ports which are disposed around the plate-shaped electrode and which are formed so as to be surrounded by the plate-shaped insulator and moreover which are different in distance to the plate-shaped electrode from each other, while a discharge control gas is supplied from the other gas exhaust port to the vicinity of the processing object. Simultaneously with the supply of the gases, electric power is supplied to the plate-shaped electrode or the processing object, by which plasma processing of the processing object is carried out. Thus, plasma processing method and apparatus capable of processing for desired fine linear portions with high precision are provided.

Abstract: A plasma source includes a gas flow channel formed therein and an electrode which is fed with electric power or grounded to be maintained at a controlled electric potential and a surface of the plasma source including an opening portion of a first gas ejecting port can be placed in parallel to a position at which a to-be-processed object can be placed. The plasma source is connected to a first gas supplying device through a gas supplying port 4 and has a multi-layer construction that is constituted from two or more layers. Gas flow channels within the multi-layer construction include buffer spaces and at least one space cross-sectional area parallel to the opening cross-sectional area of the first gas ejecting ports, out of the cross-sectional areas of the buffer spaces, is greater than the opening cross-sectional area of the first gas ejecting ports.

Abstract: Provided is a plasma processing method for generating microplasma in a space of a microplasma source arranged in the vicinity of an object to be processed by supplying gas to the space and supplying electric power to a member located in the vicinity of the space, making activated particles emitted from an opening of the microplasma source joined to the space act on the object, and forming a fine linear portion on the object. The fine linear portion is formed on the object while flowing the gas to the neighborhood of the opening along the lengthwise direction of the fine linear portion parallel to the object.

Abstract: A plasma processing method is used to process a linear portion of an object to be processed by generating a linear plasma by supplying an electric power to an electrode provided at a plasma source or the object to be processed while supplying gas to the plasma source arranged in the neighborhood of the object to be processed and making activated particles generated by the plasma act on the object to be processed. The method includes detecting an inclination of the plasma source along a direction of an x-axis when the x-axis is taken in a linear direction of the linear portion of the object to be processed, and processing the linear portion of the object to be processed by the generated linear plasma by moving the plasma source along the x-axis direction while maintaining relative positions of the plasma source and the object to be processed so that the detected inclination of the plasma source becomes approximately zero.

Abstract: A plasma processing method for processing a surface of an object to be processed made of a metal or a semiconductor by applying activated particles generated by a microplasma generated at a pressure of not lower than 10,000 Pa and not higher than three atmospheric pressures to the surface of the object, the method includes removing a natural oxide film on the surface of the object, and etching a part or whole of a region in which the natural oxide film has been removed.

Abstract: Provided is a plasma processing method for generating microplasma in a space of a microplasma source arranged in the vicinity of an object to be processed by supplying gas to the space and supplying electric power to a member located in the vicinity of the space, making activated particles emitted from an opening of the microplasma source joined to the space act on the object, and forming a fine linear portion on the object. The fine linear portion is formed on the object while flowing the gas to the neighborhood of the opening along the lengthwise direction of the fine linear portion parallel to the object.

Abstract: An electronic part processing method for peeling off a resin coating of an electronic part having a terminal section, which includes a step of irradiating, with plasma, a coated wire having copper as a principal constituent and a surface coated with a resin.

Abstract: In an ingredient analysis method and an ingredient analysis apparatus in accordance with the present invention, high-frequency power is supplied from a power source 4 while helium gas is supplied to an atmospheric pressure plasma source 2 disposed near a substance to be analyzed, whereby plasma 5 is generated, and the substance to be analyzed is exposed to the plasma 5 and emits light. The light is guided to a filter 7 and a photodiode 8 via an optical fiber 6 and subjected to photoelectrical conversion. The signal obtained by the photoelectrical conversion is sent to a controller 9. The controller 9 judges whether a specific element is present or not in the substance to be analyzed.

Abstract: A method for restoring the function of a plasma display panel according to the present invention restores a function of a plasma display panel by raising the temperature of the plasma display panel to 400° C. to 800° C.

Abstract: A plasma processing method for generating plasma in a vacuum chamber and processing a substrate placed on a substrate electrode, the plasma being generated by supplying a high-frequency power having a frequency of 50 MHz to 3 GHz to an antenna provided opposite to the substrate electrode while interior of the vacuum chamber is controlled to a specified pressure by supplying a gas into the vacuum chamber and exhausting the interior of the vacuum chamber, the method includes with a dielectric plate being sandwiched between the antenna and the vacuum chamber and both the antenna and the dielectric plate projecting into the vacuum chamber, controlling plasma distribution on the substrate with an annular and recessed slit provided between the antenna and the vacuum chamber, and processing the substrate in a state where the antenna cover is fixed by making both an inner side face of the slit and the antenna covered with an antenna cover, making a bottom face of the slit covered with a slit cover, supporting the ant

Abstract: A fluorine-containing precoating (not shown) is formed to cover a phosphor particle (7) by, for example, a physical vapor deposition of a fluoride. Then, a fluorine-containing coating (8) covering the phosphor particle (7) is formed by supplying fluorine into the precoating. Thus obtained phosphor particle (7) with the coating (8) is applied in the form of a paste to a substrate (1) on each electrode (2) is between adjacent two ribs (4) to form a phosphor layer (6) including the phosphor particles (7) between the ribs (4) on the substrate (1). The substrate (1) is positioned with respect to another substrate (not shown) having electrodes thereon to form discharge spaces between the substrates. The discharge spade is filled with a discharge gas to produce a plasma display panel (PDP).

Abstract: A plasma processing method for processing a linear portion of an object to be processed by generating a linear plasma by supplying an electric power to an electrode provided at a plasma source or the object to be processed while supplying gas to the plasma source arranged in the neighborhood of the object to be processed and making activated particles generated by the plasma act on the object to be processed, the method comprising: detecting an inclination of the plasma source along a direction of an x-axis when the x-axis is taken in a linear direction of the linear portion of the object to be processed; and processing the linear portion of the object to be processed by the generated linear plasma by moving the plasma source along the x-axis direction while maintaining relative positions of the plasma source and the object to be processed so that the detected inclination of the plasma source becomes approximately zero.

Abstract: A plasma processing method for generating plasma in a vacuum chamber and processing a substrate placed on a substrate electrode, the plasma being generated by supplying a high-frequency power having a frequency of 50 MHz to 3 GHz to an antenna provided opposite to the substrate electrode while interior of the vacuum chamber is controlled to a specified pressure by supplying a gas into the vacuum chamber and exhausting the interior of the vacuum chamber, the method includes with a dielectric plate being sandwiched between the antenna and the vacuum chamber and both the antenna and the dielectric plate projecting into the vacuum chamber, controlling plasma distribution on the substrate with an annular and recessed slit provided between the antenna and the vacuum chamber, and processing the substrate in a state where the antenna cover is fixed by making both an inner side face of the slit and the antenna covered with an antenna cover, making a bottom face of the slit covered with a slit cover, supporting the ant

Abstract: A plasma processing method for processing a surface of an object to be processed made of a metal or a semiconductor by applying activated particles generated by a microplasma generated at a pressure of not lower than 10,000 Pa and not higher than three atmospheric pressures to the surface of the object, the method includes removing a natural oxide film on the surface of the object, and etching a part or whole of a region in which the natural oxide film has been removed.

Abstract: In a plasma processing method for supplying an electric power to a first electrode, making a first electrode have a ground potential, or making a first electrode have a floating potential while supplying gas to a plasma source arranged in a vicinity of an object to be processed at a pressure in a vicinity of an atmospheric pressure, the method includes processing a part of the object to be processed with a plasma in a state where an area of a surface of a potentially controlled second electrode arranged in a position opposite to the plasma source via the object to be processed is made superposed on the object to be processed smaller than an area of a surface of the plasma source superposed on the object to be processed.