Abstract: A method for forming a direct positive image composed of the step of developing with a surface developer an imagewise exposed photosensitive material compose of support having thereon at least one photosensitive emulsion layer containing unprefogged silver halide grains capable of forming an internal latent image; the at least the photosensitive emulsion layer composed of hexagonal tabular silver halide grains in an amount of at least 30 wt %, based on the total silver amount of silver halide grains therein; the hexagonal tabular grains having two parallel hexagonal faces, the ratio of the longest side to the shortest side of the hexagon being at most 2; the aspect ratio of the hexagonal tabular grains being from 2 to 8; and the hexagonal tabular grains having a monodisperse size distribution. The method provides increases in processing speed, maximum density, and contrast in the toe portion, and an improvement in graininess, even when exhausted processing solutions are used.

Abstract: A silver halide photographic material is disclosed, comprising a support having thereon an emulsion layer comprising a dispersion medium, silver halide grains, and a pendant type sensitizing dye, wherein said pendant type sensitizing dye is a compound comprising a sensitizing dye and an antifoggant, each of which may have substituent groups and wherein said sensitizing dye and antifoggant are organochemically bonded.

Abstract: A silver halide emulsion comprising a binder and silver halide grains, wherein the projected area of substantially circular tabular silver halide grains having two parallel twin planes to the basal planes having a linear ratio of 0 to 4/5 accounts for from 70% to 100% of the projected area of the whole silver halide grains, and further the circular tabular silver halide grains are monodisperse grains.The emulsion has good aging stability.

Abstract: A silver halide photographic emulsion comprising silver halide grains is disclosed, wherein at least 60% of the total projected area of the silver halide grains is comprised of tabular silver halide grains having a central portion and an outer portion, of which the iodide content of the central portion is from 7 mol % to the solid solution limit, and which have two parallel twinned crystal planes.A method for the manufacture of the silver halide emulsion is also disclosed, which comprises the steps of nucleating the silver halide grains under conditions where the gelatin concentration in the reaction solution is set at from 0.1 to 20 wt %, the addition rates of the silver salt and the halide are set at from 6.times.10.sup.-4 to 2.9.times.10.sup.-1 mol/minute per liter of reaction solution, and the pBr value in the reaction solution is set at from 1.0 to 2.5, Ostwald ripening the nucleated grains, and then growing the thus ripened grains.

Abstract: A silver halide emulsion is described comprising a dispersion medium and silver halide grains, wherein the projected area of hexagonal tabular silver halide grains having as the outer surfaces two parallel hexagonal planes having a ratio of the longest edge length to the shortest edge length (referred to as the adjacent edge ratio) of 2/1 or less accounts for at least 70% of the projected area of the whole silver halide grains, and further the hexagonal tabular silver halide grains are monodisperse grains. The process of production of the silver halide emulsions is also described.

Abstract: A solid-state imaging device having a scanning circuit and a photoconductive film formed in layers on a semiconductor substrate, and a process for forming the same, wherein high resolution with substantially no color mixing is attained. An electrode layer is formed over the semiconductor substrate for providing the plural electrodes, and a photoconductive film is formed over the electrode layer. A first transparent electrode is produced over the photoconductive film, after which a resist pattern is formed on the first transparent electrode layer corresponding to the pixels. The first transparent layer and the photoconductive film are etched according to the resist pattern to spatially isolate adjacent pixels in the first transparent layer and the photoconductive film. Adjacent pixels are isolated by etching, using the resist pattern, that part of the electrode layer on which are disposed the first transparent electrode layer and the photoconductive film between isolated pixels.

Abstract: A solid-state imaging device having a scanning circuit and a photoconductive film formed in layers on a semiconductor substrate, and a process for forming the same, wherein high resolution with substantially no color mixing is attained. An electrode layer is formed over the semiconductor substrate for providing the plural electrodes, and a photoconductive film is formed over the electrode layer. A first transparent electrode is produced over the photoconductive film, after which a resist pattern is formed on the first transparent electrode layer corresponding to the pixels. The first transparent layer and the photoconductive film are etched according to the resist pattern to spatially isolate adjacent pixels in the first transparent layer and the photoconductive film. Adjacent pixels are isolated by etching, using the resist pattern, that part of the electrode layer on which are disposed the first transparent electrode layer and the photoconductive film between isolated pixels.