Patents by Inventor Mitsuo Samezawa

Mitsuo Samezawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Electrode for use in the treatment of an object in a plasma
    Patent number: 5022979
    Abstract: An electrode for use in the treatment of an object such as a semiconductor wafer through plasma reaction has at least a surface layer formed of silicon carbide. The electrode comprises a base, and the surface layer of silicon carbide is formed on a surface of the base by a CVD coating process.
    Type: Grant
    Filed: October 25, 1988
    Date of Patent: June 11, 1991
    Assignee: Tokyo Ohka Kogyo Co., Ltd.
    Inventors: Isamu Hijikata, Akira Uehara, Mitsuo Samezawa
  • Electrode for use in the treatment of an object in a plasma
    Patent number: 5006220
    Abstract: An electrode for use in the treatment of an object such as a semiconductor wafer through plasma reaction has at least a surface layer formed of silicon carbide. The electrode comprises a base, and the surface layer of silicon carbide is formed on a surface of the base by CVD coating process.
    Type: Grant
    Filed: February 14, 1990
    Date of Patent: April 9, 1991
    Assignee: Tokyo Ohka Kogyo Co., Ltd.
    Inventors: Isamu Hijikata, Akira Uehara, Mitsuo Samezawa