Abstract: A noise generation cause identifying method and a noise generation cause identifying device are provided. A response correcting process corrects a sound signal obtained through a sound signal obtaining process based on obtained model information so that a frequency response of the obtained sound signal approaches a frequency response of a learning sound signal. A variable obtaining process obtains a variable output from a map by inputting the corrected sound signal to the map. A cause identifying process identifies a generation cause of a sound picked up by a microphone using the variable obtained through the variable obtaining process.

Abstract: A pattern inspection apparatus includes a light source irradiating a plate having a pattern, a photoelectric device photoelectrically converting the image of the pattern, a generator generating detected pattern data based on a photoelectrically converted signal, a generator generating reference pattern data from designed data, a comparator comparing the detected pattern data with the reference pattern data, a sensor detecting a light intensity of the light source, a barometric pressure sensor detecting a barometric pressure in the apparatus, a detector detecting at least one of the light intensity and barometric pressure deviating from predetermined ranges, a memory storing the detected and reference pattern data at a point of time when the abnormal status is generated in synchronization with position data and detected values of the light intensity and barometric pressure and an output device which outputs these.

Abstract: A pattern inspection apparatus includes a pulse laser light source sequentially generating pulse laser light, an illumination optics applying the pulse laser light onto a mask substrate, an imaging optics collecting light from the mask substrate to form an image thereof, an area sensor sensing the image of the mask substrate obtained by the optics in a rectangular area unit, a comparator comparing image data acquired by the area sensor with previously prepared reference data to detect a defect of a pattern, a stage driving apparatus two-dimensionally scanning a stage having the mask substrate placed thereon, and a stage position detector detecting a position of the stage. With the above configuration, it is possible to efficiently inspect the surface of the mask substrate by adequately setting the moving speed of the mask substrate and the sensing timing of the sensing apparatus.

Abstract: A specimen surface level adjusting method used in a pattern inspecting apparatus for inspecting a pattern on a specimen surface on the basis of a detected image obtained by projecting inspecting light onto the specimen surface, the specimen surface level adjusting method comprising projecting level measuring light onto the specimen surface, detecting the position of the measuring light reflected on the specimen surface, calculating the level of the specimen surface on the basis of the position of the optical axis, adjusting the level of the specimen surface so that the calculated level may be held within the depth of focus of a pattern inspecting optical system, detecting the intensity of the reflected light, and fixing the specimen surface to a reference level, if the intensity is less than a specific threshold value.

Abstract: A pattern inspection apparatus includes a light source irradiating a plate having a pattern with light, a photoelectric device photoelectrically converting the optical image of the pattern, a detected pattern data generator generating detected pattern data based on a photoelectrically converted signal, a reference pattern data generator generating reference pattern data from designed data, a comparator comparing the detected pattern data with the reference pattern data, a light intensity sensor detecting a light intensity of the light, a barometric pressure sensor detecting a barometric pressure in the apparatus, a status detector detecting at least one of the light intensity and barometric pressure deviating from predetermined ranges, a data memory storing the detected and reference pattern data at the same time when the abnormal status is generated in synchronization with position data and detected values of the light intensity and barometric pressure and an output device which outputs these.

Abstract: A pattern inspection apparatus includes a pulse laser light source sequentially generating pulse laser light, an illumination optics applying the pulse laser light onto a mask substrate, an imaging optics collecting light from the mask substrate to form an image thereof, an area sensor sensing the image of the mask substrate obtained by the optics in a rectangular area unit, a comparator comparing image data acquired by the area sensor with previously prepared reference data to detect a defect of a pattern, a stage driving apparatus two-dimensionally scanning a stage having the mask substrate placed thereon, and a stage position detector detecting a position of the stage. With the above configuration, it is possible to efficiently inspect the surface of the mask substrate by adequately setting the moving speed of the mask substrate and the sensing timing of the sensing apparatus.

Abstract: A photomask defect inspection method is provided by which defects of pin holes with the diameter equal to or less than 0.35 .mu.m can be detected with certainty. According to the inspection method, a pattern whose image is projected onto an imaging position by the use of illumination light (P1) for exposure consists of light transmitting portions (41) formed on a glass base (2) and light intercepting portions (42) which transmit part of the illumination light (P1) in such a way that a phase of the part of the illumination light (P1) passing through the light intercepting portions (42) is delayed with respect to a phase of the illumination light (P1) passing through the light transmitting portions (41).

Abstract: A single light emitted from a laser source is split into multiple beams. The multiple beams are illuminated by a multi-beam scanner to scan a substrate of interest. An optical system is provided for focusing the multiple beams independently on the substrate and directing a reflected light or a transmitted light of the multiple beams on the substrate. Aperture regulating members are disposed at equal intervals corresponding to the interval between the multiple beams for controlling the multiple beams directed from the substrate by the optical system. The multiple beams passed through their respective aperture regulating members are received by an optical detector assembly which detect a change in the amount of the multiple beams. The substrate is continuously moved by a movable table on a plane substantially vertical to the multiple beams and in a direction arranged at substantially a right angle to the scanning direction of the multiple beams.

Abstract: A pattern defect inspection apparatus. Light is irradiated on a sample having a pattern formed thereon and the transmitted or reflected portion of the irradiated light is condensed. The condensed light is received so as to acquire the observed data corresponding to the pattern formed in the sample. A design pattern image is compared with a pattern formed in the sample by the observed data. Alternatively, two sets of observed data corresponding to a plurality of patterns formed in the sample are compared. The presence or absence of a defect of the pattern is judged based on the result of comparison. This also determines whether the size of the defect of the pattern is larger than a predetermined size. The inspection is temporarily stopped if the size of the defect detected by the judging circuit during inspection is larger than a predetermined size.

Abstract: In a method of inspecting a sample on which a pattern relating to fabrication of a semiconductor device is formed, there are provided a light radiation unit, an acquiring unit, a storage unit, a template, a calculation unit, a correction unit, a defect detection unit and an output unit. Pinhole shape data to be detected of the pattern is stored in the template. The calculation unit calculates the degree of coincidence between the pinhole shape data stored in the template and the measured image data stored in the storage unit in units of a predetermined amount of data. The correction unit corrects a portion of the measured image data corresponding to a value of the degree of coincidence exceeding a second predetermined value in units of the predetermined amount of data, when the degree of coincidence obtained by the calculation unit has exceeded a first predetermined value, thereby correcting the portion of the measured image data including the detected pinhole.

Abstract: A sample detection apparatus includes a light radiation unit, having an illumination lens and an objective lens, for radiating light on a sample on which a pattern relating to fabrication of a semiconductor device is formed. A light receiving unit detects a light transmission image of the pattern on the sample on which the light has been radiated by the light radiation unit. A determination unit determines a presence/absence of a defect of the pattern obtained by the light receiving unit with reference data relating to the pattern, and a control unit controls a ratio .sigma. of a numerical aperture of the objective lens, in accordance with a type of the pattern.

Abstract: A photomask defect inspection method is provided by which defects of pin holes with the diameter equal to or less than 0.35 .mu.m can be detected with certainty. According to the inspection method, a pattern whose image is projected onto an imaging position by the use of illumination light (P1) for exposure consists of light transmitting portions (41) formed on a glass base (2) and light intercepting portions (42) which transmit part of the illumination light (P1) in such a way that a phase of the part of the illumination light (P1) passing through the light intercepting portions (42) is delayed with respect to a phase of the illumination light (P1) passing through the light transmitting portions (41).

Abstract: A pattern defect inspection apparatus comprises a light irradiating portion, a light receive element, a light receive element amplifier, a preparation portion for preparing multi-valued design pattern image data, an offset adjusting portion, a gain adjusting portion, and an inspecting portion. The offset adjusting portion adjusts the offset of the light receive element amplifier such that measurement data of a translucent portion of a pattern on a sample surface corresponds to design pattern image data corresponding to the translucent portion, regarding the translucent portion as a non-transparent portion. The gain adjusting portion adjusts the gain of the light receive element amplifier such that measurement data of a transparent portion of the pattern on the sample surface corresponds to design pattern image data corresponding to the transparent portion.

Abstract: The present invention provides a pattern evaluating device including light irradiating means for irradiating the rays of light from a light source upon an object, an objective lens through which the light having penetrated through the object passes, an aperture member stopping the diameter of a light beam which has passed the objective lens, a photo receiving element receiving the light beam which has had the diameter stopped by the aperture member, and judging means for evaluating the pattern, following the information of the light received by the photo receiving element and which corresponds to the pattern, wherein the aperture member is capable of changing the numerical aperture, depending whether or not the sample is provided with a pericle.

Abstract: A pattern defect inspection apparatus according to this invention comprises an irradiation circuit for irradiating a substrate on which a given pattern is drawn, a detector circuit for detecting said irradiated pattern on said substrate, a bit pattern generating circuit for quantizing and generating previously given design data by processing said design data based on specified figure information to obtain bit pattern data composed of a finite number of pixels, and a comparator circuit for detecting defects on said substrate by comparing the detected data from said detecting means with the data from said bit pattern generating means, wherein the bit pattern generating circuit has an additional parameter conditioner for setting the dimension of each pixel to be quantized into said bit pattern data to the desired value.

Abstract: In a method for aligning first and second objects relative to each other, according to this invention, the first and second objects are arranged opposite to each other, and are aligned in a direction perpendicular to their opposing direction. A grating pattern is formed, as an alignment mark, on the first object, and a checkerboard-like grating pattern is formed, also as an alignment mark, on the second object. A light beam emitted from an alignment light source is radiated onto the checkerboard-like grating pattern of the second object. The light beam diffracted by the checkerboard-like grating pattern is guided onto the grating pattern of the first object. The light beam diffracted by the grating pattern of the first object is detected by a detector. Since the light beam emitted from the light source is diffracted by the checkerboard-like grating pattern, a relative position of the first and second objects can be detected, irrespective of the distance therebetween.

Abstract: First and second objects are moved relative and parallel to each other, in order to be aligned. More specifically, a first mark formed on the first object has first and second light-passing sections. A second mark formed on the second object has first and second light-reflecting sections. A light beam from a light source is directed to and reflected by the first and second light-reflecting sections of said second mark and transferred onto said first mark. An image of said first light-reflecting section is projected onto the first mark, so that the first light-passing section has a first overlapping region which overlaps a part of the inner of said first light-reflecting section. An image of said second light-reflecting section is projected onto the first mark, so that said second light-passing section has a second overlapping region which overlaps a part of the image of said second light-reflecting section.

Abstract: A device for measuring the position of an object has a light radiation mechanism for causing light to be obliquely incident on a surface of the object, a vibrating mechanism for vibrating the light incident on the surface of the object at a predetermined frequency, and a detecting mechanism for detecting light reflected by the surface of the object, generating a detection signal, and obtaining the position of the object in accordance with the detection signal.

Abstract: In a position detecting method, a light beam is radiated onto an object on which a position detecting mark is formed; the reflected beam is detected by a beam detector through a slit; the slit is vibrated, and at the same time a detection signal outputted from the beam detector is detected synchronously with the vibration of the slit; thereby detecting the position of the object. A fundamental wave component a.sub.f and a second harmonic component a.sub.2f of the detection signal are fetched due to the synchronous detection and these components a.sub.f and a.sub.2f are subjected to the conversions for eliminating the variation in output level in association with the variation in input level while the corresponding relation between the peak point of the fundamental wave component a.sub.f and the zero point of the second harmonic component a.sub.2f is held. For example, as these conversions, the following conversions are performed: ##EQU1## The output components a.sub.f * and a.sub.

Abstract: Alignment marks are formed on the opposite surfaces of a photoelectric mask and a wafer. Each mark has a plurality of lines provided at a predetermined pitch. Widths of the lines of the photoelectric mask are progressively increased. On the while, widths of the lines of the wafer are progressively decreased. The marks of the wafer and the mask are opposite to each other such that lines of the maximum and minimum widths are opposite to each other. The overlapping area of the marks changes quadratically as a function of positional deviation between the mask and the wafer. When the mask is irradiated with ultraviolet light, X-rays are emitted from the mark on the wafer at an intensity corresponding to the overlapping area and are detected by an X-ray detector. The intensity of X-rays emitted changes quadratically as a function of deviation. The electron beam is scanned, and a detection signal is synchronously detected.