Patents by Inventor Mitsuru Arai

Mitsuru Arai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12254237
    Abstract: An output driver according to the disclosure includes a differential signaling circuit that includes a first transistor that generates a bias current, first and second nodes, and a resistor circuit connected between the first and second nodes, and outputs voltages respectively at the first and second nodes as a pair of differential signals by supplying the bias current to one of the first and second nodes based on a level of the input signals, a differential voltage circuit that supplies a differential voltage representing a difference between a center voltage of voltages between the first node and the second node and a predetermined reference voltage to a gate of the first transistor; and a pre-emphasis circuit that executes a pre-emphasis processing in response to changes in the level of the input signal, generating a current based on the differential voltage and adding it to the bias current.
    Type: Grant
    Filed: January 16, 2024
    Date of Patent: March 18, 2025
    Assignee: LAPIS Technology Co., Ltd.
    Inventor: Mitsuru Arai
  • Publication number: 20240291486
    Abstract: A driving capability control device includes: an averaging circuit, averaging and outputting a drive signal including a pulse train supplied by a driver; a comparison circuit, outputting a comparison result of an output voltage level of the averaging circuit and a predetermined threshold voltage level; and a control circuit, outputting a control signal for controlling a driving capability of the drive signal based on an output of the comparison circuit.
    Type: Application
    Filed: February 19, 2024
    Publication date: August 29, 2024
    Applicant: LAPIS Technology Co., Ltd.
    Inventor: Mitsuru ARAI
  • Publication number: 20240256212
    Abstract: An output driver according to the disclosure includes a differential signaling circuit that includes a first transistor that generates a bias current, first and second nodes, and a resistor circuit connected between the first and second nodes, and outputs voltages respectively at the first and second nodes as a pair of differential signals by supplying the bias current to one of the first and second nodes based on a level of the input signals, a differential voltage circuit that supplies a differential voltage representing a difference between a center voltage of voltages between the first node and the second node and a predetermined reference voltage to a gate of the first transistor; and a pre-emphasis circuit that executes a pre-emphasis processing in response to changes in the level of the input signal, generating a current based on the differential voltage and adding it to the bias current.
    Type: Application
    Filed: January 16, 2024
    Publication date: August 1, 2024
    Applicant: LAPIS Technology Co., Ltd.
    Inventor: Mitsuru ARAI
  • Patent number: 10598146
    Abstract: An axial hydraulic pump-motor, in which a cylinder block having a plurality of cylinder bores on a valve plate having a high-pressure side port and a low-pressure side port for controlling an amount of reciprocation of a piston in each of the cylinder bores, the hydraulic pump-motor includes: a residual pressure release port provided on the valve plate and communicating until the cylinder bore on a top dead center side communicates with the low-pressure side port; a residual pressure acquisition portion obtaining a value of a residual pressure in the cylinder bore on the top dead center side; and a directional switching valve switching a flow path between the residual pressure release port and an hydraulic oil tank and a flow path between the residual pressure release port and the low-pressure side port.
    Type: Grant
    Filed: August 8, 2014
    Date of Patent: March 24, 2020
    Assignee: KOMATSU LTD.
    Inventors: Takeo Iida, Mitsuru Arai, Seiichi Hasegawa
  • Publication number: 20170045028
    Abstract: An axial hydraulic pump-motor, in which a cylinder block having a plurality of cylinder bores on a valve plate having a high-pressure side port and a low-pressure side port for controlling an amount of reciprocation of a piston in each of the cylinder bores, the hydraulic pump-motor includes: a residual pressure release port provided on the valve plate and communicating until the cylinder bore on a top dead center side communicates with the low-pressure side port; a residual pressure acquisition portion obtaining a value of a residual pressure in the cylinder bore on the top dead center side; and a directional switching valve switching a flow path between the residual pressure release port and an hydraulic oil tank and a flow path between the residual pressure release port and the low-pressure side port.
    Type: Application
    Filed: August 8, 2014
    Publication date: February 16, 2017
    Inventors: Takeo Iida, Mitsuru Arai, Seiichi Hasegawa
  • Publication number: 20120261040
    Abstract: There is provided a gas-generating agent composition having a very small pressure exponent and an extremely low pressure dependence of the burning rate. The gas-generating agent composition of the present invention contains a nitrogen-containing organic compound as a fuel and ammonium nitrate as an oxidizing agent, wherein the ratio of the nitrogen-containing organic compound to the ammonium nitrate (the former/the latter: weight ratio) is 35/65 or less. In the gas-generating agent composition, a copper compound may be further blended in a proportion of more than 0 part by weight and 30 parts by weight or less based on 100 parts by weight of the total amount of the nitrogen-containing organic compound and ammonium nitrate. The copper compound is preferably basic copper nitrate. Further, the nitrogen-containing organic compound is preferably a guanidine derivative, particularly preferably a guanidine nitrate.
    Type: Application
    Filed: November 19, 2010
    Publication date: October 18, 2012
    Applicants: DAICEL CORPORATION, THE UNIVERSITY OF TOKYO
    Inventors: Mitsuru Arai, Yusuke Wada, Shogo Tomiyama, Yasunori Iwai, Shingo Oda
  • Patent number: 8248162
    Abstract: A high-gain differential amplifier that is capable of high speed operation, outputs a signal representing a difference between signals respectively inputted to first and second input terminals and a phase-inverted signal thereof via first and second output terminals respectively. A first switching element making a short-circuit between the first input terminal and the second output terminal when turned on, a second switching element making a short-circuit between the second input terminal and the first output terminal when turned on, and a third switching element making a short-circuit between the first output terminal and the second output terminal when turned on are provided. The third switching element is turned on for a predetermined period while the first and second switching elements are turned off. Subsequently, the third switching element is switched off, and the first and second switching elements are switched on.
    Type: Grant
    Filed: October 12, 2010
    Date of Patent: August 21, 2012
    Assignee: OKI Semiconductor Co., Ltd.
    Inventor: Mitsuru Arai
  • Patent number: 8047120
    Abstract: In a hydraulic piston pump, a cylinder port can communicate with a discharge port after a system pressure and a chamber pressure in a cylinder bore becomes in an equilibrium condition. A through hole opening to a surface on which a cylinder block slides in a valve plate is allowed to communicate with a side of one end surface of a balance valve, and the system pressure of a discharge port side is supplied to the other end surface of the balance valve. In the balance valve, a balance piston which slides by a pressure difference between the chamber pressure of the cylinder bore and the system pressure is accommodated. Before the cylinder port communicates with an oil guiding groove, the chamber pressure can be equilibrated to the system pressure by an activation of the balance piston.
    Type: Grant
    Filed: February 8, 2006
    Date of Patent: November 1, 2011
    Assignee: Komatsu Ltd.
    Inventors: Shigeru Shinohara, Mitsuru Arai
  • Patent number: 8044488
    Abstract: The invention is based upon a semiconductor device where a high voltage bipolar transistor is manufactured on the same wafer with a high-speed bipolar transistor, and has a characteristic that the high-speed bipolar transistor and the high voltage bipolar transistor are formed on each epitaxial collector layer having the same thickness and are provided with a buried collector region formed in the same process and having the same impurity profile, the buried collector region exists immediately under a base of the high-speed bipolar transistor, no buried collector region and no SIC region exist immediately under a base of the high voltage bipolar transistor and distance between a base region and a collector plug region of the high voltage bipolar transistor is equal to or is longer than the similar distance of the high-speed bipolar transistor.
    Type: Grant
    Filed: June 23, 2008
    Date of Patent: October 25, 2011
    Assignees: Hitachi, Ltd., Hitachi Ulsi Systems Co., Ltd.
    Inventors: Mitsuru Arai, Shinichiro Wada, Hideyuki Hosoe
  • Patent number: 8018006
    Abstract: A semiconductor device includes a lower substrate, a thin semiconductor layer and an insulating layer formed between the lower substrate and the semiconductor layer. An active transistor area is formed with a base formed along a surface of the semiconductor layer, an emitter region formed in the base, a buried collector in the thin semiconductor layer to contact the insulating layer, a collector contacting the buried collector, and emitter, collector and base contacts. The active transistor area is configured to operate at an emitter current at least in the order of mA (milli-ampere). An isolation trench extends through the semiconductor layer to the insulating layer and surrounds the active transistor area with a distance in the order of ?m (micron) from the active transistor area and with a space area of more than 50 ?m2 between the active transistor area and the isolation trench.
    Type: Grant
    Filed: April 13, 2010
    Date of Patent: September 13, 2011
    Assignees: Hitachi ULSI Systems Co., Ltd., Hitachi, Ltd.
    Inventors: Mitsuru Arai, Shinichiro Wada, Hideaki Nonami
  • Publication number: 20110102085
    Abstract: A high-gain differential amplifier that is capable of high speed operation is provided. A differential amplifier that outputs a signal representing a difference between signals respectively inputted to first and second input terminals and a phase-inverted signal thereof via first and second output terminals respectively, is provided with a first switching element that makes a short-circuit between the first input terminal and the second output terminal when turned on, a second switching element that makes a short-circuit between the second input terminal and the first output terminal when turned on, and a third switching element that makes a short-circuit between the first output terminal and the second output terminal when turned on. The third switching element is set to an ON state for a predetermined period while the first and second switching elements are set to an OFF state.
    Type: Application
    Filed: October 12, 2010
    Publication date: May 5, 2011
    Applicant: OKI SEMICONDUCTOR CO., LTD.
    Inventor: Mitsuru Arai
  • Publication number: 20100314712
    Abstract: A semiconductor device includes a lower substrate, a thin semiconductor layer and an insulating layer formed between the lower substrate and the semiconductor layer. An active transistor area is formed with a base formed along a surface of the semiconductor layer, an emitter region formed in the base, a buried collector in the thin semiconductor layer to contact the insulating layer, a collector contacting the buried collector, and emitter, collector and base contacts. The active transistor area is configured to operate at an emitter current at least in the order of mA (milli-ampere). An isolation trench extends through the semiconductor layer to the insulating layer and surrounds the active transistor area with a distance in the order of ?m (micron) from the active transistor area and with a space area of more than 50 ?m2 between the active transistor area and the isolation trench.
    Type: Application
    Filed: April 13, 2010
    Publication date: December 16, 2010
    Inventors: Mitsuru Arai, Shinichiro Wada, Hideaki Nonami
  • Patent number: 7696582
    Abstract: A semiconductor device having a bipolar transistor improved with heat dissipation. A semiconductor device having bipolar transistors formed in a plurality of device forming regions electrically isolated from each other by device isolation trenches traversing the semiconductor layer, in which a device isolation trench for each of unit bipolar transistors connected in parallel is removed and the plurality of unit bipolar transistors connected in series are entirely surrounded with one device isolation trench.
    Type: Grant
    Filed: February 18, 2009
    Date of Patent: April 13, 2010
    Assignees: Hitachi ULSI Systems Co., Ltd., Hitachi, Ltd.
    Inventors: Mitsuru Arai, Shinichiro Wada, Hideaki Nonami
  • Publication number: 20090160016
    Abstract: A semiconductor device having a bipolar transistor improved with heat dissipation. A semiconductor device having bipolar transistors formed in a plurality of device forming regions electrically isolated from each other by device isolation trenches traversing the semiconductor layer, in which a device isolation trench for each of unit bipolar transistors connected in parallel is removed and the plurality of unit bipolar transistors connected in series are entirely surrounded with one device isolation trench.
    Type: Application
    Filed: February 18, 2009
    Publication date: June 25, 2009
    Inventors: Mitsuru ARAI, Shinichiro Wada, Hideaki Nonami
  • Publication number: 20090014838
    Abstract: The invention is based upon a semiconductor device where a high voltage bipolar transistor is manufactured on the same wafer with a high-speed bipolar transistor, and has a characteristic that the high-speed bipolar transistor and the high voltage bipolar transistor are formed on each epitaxial collector layer having the same thickness and are provided with a buried collector region formed in the same process and having the same impurity profile, the buried collector region exists immediately under a base of the high-speed bipolar transistor, no buried collector region and no SIC region exist immediately under a base of the high voltage bipolar transistor and distance between a base region and a collector plug region of the high voltage bipolar transistor is equal to or is longer than the similar distance of the high-speed bipolar transistor.
    Type: Application
    Filed: June 23, 2008
    Publication date: January 15, 2009
    Inventors: Mitsuru ARAI, Shinichiro Wada, Hideyuki Hosoe
  • Publication number: 20080138225
    Abstract: A hydraulic piston pump in which a cylinder port (4b) can be communicated with a discharge port (9) after a system pressure (Po) and a chamber pressure (Pi) in a cylinder bore are in an equilibrium state. A through-hole (16) opened in that surface of a valve plate (7) on which a cylinder block (3) slides is communicated with one end surface (21a) side of a balance valve (20), and the system pressure (Po) on the discharge port (9) side is supplied to the other end surface (21b) of the balance valve. A balance piston (21) is built-in in the balance valve, and the balance piston (21) slides by a pressure difference between the chamber pressure (Pi) in the cylinder bore (4) and the system pressure (Po). Before a cylinder port (4b) is communicated with an oil guiding groove (15), the chamber pressure (Pi) and the system pressure (Po) can be brought into an equilibrium state by actuation of the balance piston (21).
    Type: Application
    Filed: February 8, 2006
    Publication date: June 12, 2008
    Inventors: Shigeru Shinohara, Mitsuru Arai
  • Patent number: 7271452
    Abstract: An analog switch has a first circuit and a second circuit. The first circuit has an NMOS and PMOS connected in series, and the second circuit has a PMOS and NMOS connected in series. The first and second circuits are provided in parallel between an input terminal and output terminal of the analog switch. The gate of each NMOS is connected to a terminal to which a first clock signal is supplied, and the gate of each PMOS is connected to another terminal to which a second clock signal is supplied. The second clock signal is a reversal of the first clock signal. When the analog switch is set to the OFF state and a voltage that is above the supply potential is applied to the input terminal, the NMOSs become reverse-biased diodes. Therefore, an off leak current is not produced.
    Type: Grant
    Filed: November 8, 2004
    Date of Patent: September 18, 2007
    Assignee: Oki Electric Industry Co., Ltd.
    Inventor: Mitsuru Arai
  • Patent number: 7157946
    Abstract: The conventional chopper comparator circuit has had high power consumption because the gain thereof used to be set high, so that there has been the need for cutting down on power consumption.
    Type: Grant
    Filed: December 15, 2003
    Date of Patent: January 2, 2007
    Assignee: Oki Electric Industry Co., Ltd.
    Inventors: Mitsuru Arai, Mamoru Kondo
  • Publication number: 20060175635
    Abstract: A semiconductor device having a bipolar transistor improved with heat dissipation. A semiconductor device having bipolar transistors formed in a plurality of device forming regions electrically isolated from each other by device isolation trenches traversing the semiconductor layer, in which a device isolation trench for each of unit bipolar transistors connected in parallel is removed and the plurality of unit bipolar transistors connected in series are entirely surrounded with one device isolation trench.
    Type: Application
    Filed: January 19, 2006
    Publication date: August 10, 2006
    Inventors: Mitsuru Arai, Shinichiro Wada, Hideaki Nonami
  • Publication number: 20050139931
    Abstract: An analog switch has a first circuit and a second circuit. The first circuit has an NMOS and PMOS connected in series, and the second circuit has a PMOS and NMOS connected in series. The first and second circuits are provided in parallel between an input terminal and output terminal of the analog switch. The gate of each NMOS is connected to a terminal to which a first clock signal is supplied, and the gate of each PMOS is connected to another terminal to which a second clock signal is supplied. The second clock signal is a reversal of the first clock signal. When the analog switch is set to the OFF state and a voltage that is above the supply potential is applied to the input terminal, the NMOSs become reverse-biased diodes. Therefore, an off leak current is not produced.
    Type: Application
    Filed: November 8, 2004
    Publication date: June 30, 2005
    Applicant: Oki Electric Industry Co., Ltd.
    Inventor: Mitsuru Arai