Abstract: A valve (10) of an embodiment of the present invention has a tapered section (55) on an opening side of a depression (51a) of a body (1). When a projection (4b) of a ball (4) is inserted into the depression (51a), a part of a tip end edge of the projection (4b) is brought into contact with the tapered section (55), and the tapered section (55) guides the projection (4b) so that the entire circumference of the tip end edge of the projection (4b) is located on a bottom side with respect to the tapered section (55).

Abstract: A semiconductor device includes a p-type nitride semiconductor layer, the p-type nitride semiconductor layer including an Al-containing nitride semiconductor layer and an Al-containing compound layer containing Al and C as main constituent elements and provided on the surface of the Al-containing nitride semiconductor layer.

Abstract: A semiconductor device includes a p-type nitride semiconductor layer, the p-type nitride semiconductor layer including an Al-containing nitride semiconductor layer and an Al-containing compound layer containing Al and C as main constituent elements and provided on the surface of the Al-containing nitride semiconductor layer.

Abstract: This method for producing a semiconductor light emitting element includes: a step (a) of preparing a growth substrate; a step (b) of growing a first layer made of Alx1Gay1In1-x1-y1N (0<x1?1, 0?y1?1) on an upper layer of the growth substrate in a <0001> direction; a step (c) of forming a groove portion extending along a <11-20> direction of the first layer with respect to the first layer with such a depth that a surface of the growth substrate is not exposed; a step (d) of growing a second layer made of Alx2Gay2In1-x2-y2N (0<x2?1, 0?y2?1) on an upper layer of the first layer with at least a {1-101} plane serving as a crystal growth plane; and a step (e) of growing an active layer on an upper layer of the second layer.

Abstract: Provided is a compact ultraviolet irradiation apparatus which is capable of emitting ultraviolet radiation with high efficiency. This ultraviolet irradiation apparatus includes, in a vessel, a semiconductor multi-layered film element and an electron beam irradiation source for irradiating the semiconductor multi-layered film element with an electron beam, the vessel being hermetically sealed to have a negative internal pressure and having an ultraviolet transmitting window. Furthermore, the semiconductor multi-layered film element includes an active layer having a single quantum well structure or a multi quantum well structure of InxAlyGa1-x-yN (0?x<1, 0<y?1, x+y?1), and the active layer of the semiconductor multi-layered film element is irradiated with an electron beam from the electron beam irradiation source. This allows the semiconductor multi-layered film element to emit ultraviolet radiation out of the vessel through the ultraviolet transmitting window.

Abstract: A scanning probe microscope includes: a first and second probes for scanning a sample while maintaining the distance to the sample surface; crystal oscillators holding each of the first and second probes; and a modulation oscillator for providing the first probe with a vibration of a specific frequency which is different from the resonant frequency of each crystal oscillator. A control unit monitors the vibration of the specific frequency of the first and second probes, detects proximity of the first probe and the second probe to each other based on the change of the specific frequencies, and controls the drive of the first and second probes.

Abstract: Provided is a compact ultraviolet irradiation apparatus which is capable of emitting ultraviolet radiation with high efficiency. This ultraviolet irradiation apparatus includes, in a vessel, a semiconductor multi-layered. film element and an electron beam irradiation source for irradiating the semiconductor multi-layered film element with an electron beam, the vessel being hermetically sealed to have a negative internal pressure and having an ultraviolet transmitting window. Furthermore, the semiconductor multi-layered film element includes an active layer having a single quantum well structure or a multi quantum well structure of InxAlyGa1-x-yN (0?x<1, 0<y?1, x+y?1), and the active layer of the semiconductor multi-layered film element is irradiated with an electron beam from the electron beam irradiation source. This allows the semiconductor multi-layered film element to emit ultraviolet radiation out of the vessel through the ultraviolet transmitting window.

Abstract: An ultraviolet irradiation device having a simple structure without using a pn junction, which can efficiently utilize a surface plasmon polariton and can emit ultraviolet light of a specific wavelength at a high efficiency. The device has at least one semiconductor multilayer film element and an electron beam irradiation source which are provided in a container having an ultraviolet-ray transmitting window and is vacuum-sealed, wherein the film element has an active layer formed of InxAlyGa1-x-yN (wherein 0?x?1, 0?y?1, and x+y?1) and having a single or multiple quantum well structure and a metal film formed on an upper surface of the active layer, composed of metal particles of aluminum or an aluminum alloy and having a nano-structure formed of the metal particles, wherein ultraviolet light is emitted to the outside through the transmitting window by irradiating the film element with electron beams from the irradiation source.

Abstract: A scanning probe microscope includes: a first and second probes for scanning a sample while maintaining the distance to the sample surface; crystal oscillators holding each of the first and second probes; and a modulation oscillator for providing the first probe with a vibration of a specific frequency which is different from the resonant frequency of each crystal oscillator. A control unit monitors the vibration of the specific frequency of the first and second probes, detects proximity of the first probe and the second probe to each other based on the change of the specific frequencies, and controls the drive of the first and second probes.

Abstract: A fluorescent material excellent in emission efficiency in white emission and a light-emitting apparatus employing this fluorescent material and having excellent color rendering are provided with a fluorescent material comprising a two-layer structure of a core of a particle size having a quantum effect and a shell covering this core in which the ground state energy of the core is in the range of 1.85 to 2.05 eV, the high order energy of the core is not in the ranges of 2.3 to 2.5 eV and 2.65 to 2.8 eV, or the ground state energy of the core is in the range of 2.3 to 2.5 eV, the high order energy of the core is not in the range of 2.65 to 2.8 eV an light-emitting apparatus employing these fluorescent materials.

Abstract: The invention provides a nitride semiconductor light-emitting device comprising gallium nitride semiconductor layers formed on a heterogeneous substrate, wherein light emissions having different light emission wavelengths or different colors are given out of the same active layer. Recesses 106 are formed by etching in the first electrically conductive (n) type semiconductor layer 102 formed on a substrate with a buffer layer interposed between them. Each recess is exposed in plane orientations different from that of the major C plane. For instance, the plane orientation of the A plane is exposed. An active layer is grown and joined on the plane of this plane orientation, on the bottom of the recess and the C-plane upper surface of a non-recess portion. The second electrically conductive (p) type semiconductor layer is formed on the inner surface of the recess.

Abstract: Disclosed is a light-emitting device comprising a semiconductor excitation light source emitting blue-violet light and a solid material illuminant having an absorbent for the blue-violet light containing samarium (Sm). With such a constitution, the light-emitting device has high efficiency, long life and excellent color rendering properties.

Abstract: A fluorescent material excellent in emission efficiency in white emission and a light-emitting apparatus employing this fluorescent material and having excellent color rendering are provided with a fluorescent material comprising a two-layer structure of a core of a particle size having a quantum effect and a shell covering this core in which the ground state energy of the core is in the range of 1.85 to 2.05 eV, the high order energy of the core is not in the ranges of 2.3 to 2.5 eV and 2.65 to 2.8 eV, or the ground state energy of the core is in the range of 2.3 to 2.5 eV, the high order energy of the core is not in the range of 2.65 to 2.8 eV an light-emitting apparatus employing these fluorescent materials.

Abstract: The invention provides a nitride semiconductor light-emitting device comprising gallium nitride semiconductor layers formed on a heterogeneous substrate, wherein light emissions having different light emission wavelengths or different colors are given out of the same active layer. Recesses 106 are formed by etching in the first electrically conductive (n) type semiconductor layer 102 formed on a substrate with a buffer layer interposed between them. Each recess is exposed in plane orientations different from that of the major C plane. For instance, the plane orientation of the A plane is exposed. An active layer is grown and joined on the plane of this plane orientation, on the bottom of the recess and the C-plane upper surface of a non-recess portion. The second electrically conductive (p) type semiconductor layer is formed on the inner surface of the recess.

Abstract: The luminous efficiency of a nitride semiconductor device comprising a gallium nitride-based semiconductor layer formed on a dissimilar substrate is improved. An n-type layer formed on the substrate with a buffer layer interposed between them comprises a portion of recess-and-projection shape in section as viewed in the longitudinal direction. Active layers are formed on at least two side faces of the projection with the recess located between them. A p-type layer is formed within the recess. An insulating layer is formed on the top face of the projection, and on the bottom face of the recess. The n-type layer is provided with an n-electrode while the p-type layer is provided with a p-electrode contact layer. As viewed from the p-type layer formed within the recess in the gallium nitride-based semiconductor layer, the active layer and the n-type layer are located in an opposite relation to each other.

Abstract: The luminous efficiency of a nitride semiconductor device comprising a gallium nitride-based semiconductor layer formed on a dissimilar substrate is improved. An n-type layer formed on the substrate with a buffer layer interposed between them comprises a portion of recess-and-projection shape in section as viewed in the longitudinal direction. Active layers are formed on at least two side faces of the projection with the recess located between them. A p-type layer is formed within the recess. An insulating layer is formed on the top face of the projection, and on the bottom face of the recess. The n-type layer is provided with an n-electrode while the p-type layer is provided with a p-electrode contact layer. As viewed from the p-type layer formed within the recess in the gallium nitride-based semiconductor layer, the active layer and the n-type layer are located in an opposite relation to each other.