Abstract: A part of a semiconductor layer directly under a light-receiving gate electrode functions as a charge generation region, and electrons generated in the charge generation region are injected into a part of a surface buried region directly above the charge generation region. The surface buried region directly under a first transfer gate electrode functions as a first transfer channel, and the surface buried region directly under a second transfer gate electrode functions as a second transfer channel. Signal charges are alternately transferred to an n-type first floating drain region and a second floating drain region through the first and second floating transfer channels.

Abstract: To transfer signal charges generated by a semiconductor photoelectric conversion element in opposite directions, the center line of a first transfer gate electrode and that of a second transfer gate electrodes are arranged on the same straight line, and a U-shaped first exhausting gate electrode and a second exhausting gate electrode are arranged to oppose to each other. The first exhausting gate electrode exhausts background charges generated by a background light in the charge generation region, and the second exhausting gate electrode exhausts background charges generated by the background light in the charge generation region. The background charges exhausted by the first exhausting gate electrode are received by a first exhausting drain region and the background charges exhausted by the second exhausting gate electrode are received by a first exhausting drain region.

Abstract: A part of a semiconductor layer directly under a light-receiving gate electrode functions as a charge generation region, and electrons generated in the charge generation region are injected into a part of a surface buried region directly above the charge generation region. The surface buried region directly under a first transfer gate electrode functions as a first transfer channel, and the surface buried region directly under a second transfer gate electrode functions as a second transfer channel. Signal charges are alternately transferred to an n-type first floating drain region and a second floating drain region through the first and second floating transfer channels.

Abstract: To transfer signal charges generated by a semiconductor photoelectric conversion element in opposite directions, the center line of a first transfer gate electrode and that of a second transfer gate electrodes are arranged on the same straight line, and a U-shaped first exhausting gate electrode and a second exhausting gate electrode are arranged to oppose to each other. The first exhausting gate electrode exhausts background charges generated by a background light in the charge generation region, and the second exhausting gate electrode exhausts background charges generated by the background light in the charge generation region. The background charges exhausted by the first exhausting gate electrode are received by a first exhausting drain region and the background charges exhausted by the second exhausting gate electrode are received by a first exhausting drain region.