Abstract: Provided is a vapor deposition method in which a deposition rate can be kept constant, it is not needed to unnecessarily increase a container temperature for improving a deposition rate, and vapor deposition of even a powder material that is easily thermally decomposed can be performed at a desired deposition rate, in vacuum vapor deposition using a powder material. The method is provided by using a container including an accommodating portion configured to accommodate the powder material and at least one opening for releasing vapor of the powder material from the accommodating portion, to perform the vacuum vapor deposition of the powder material by heating the container, in which, in a case where an area of an inner surface of the accommodating portion is S and a total area of the opening is O, a ratio of the total area O of the opening to the area S of the inner surface is 0.06% to 2% as a percentage of O/S.

Abstract: The tube is stretchable. The tube is stretched by applying tension in a longitudinal direction. The tube returns to its short state by releasing the above-described tension applied in the longitudinal direction. A plurality of protrusions are formed on an inner surface of the tube. Each of the plurality of protrusions extends in a circumferential direction. The plurality of protrusions are arranged side by side in the longitudinal direction of the tube. A pitch of the protrusions is less than or equal to 1.5 ?m.

Abstract: The laminate includes a plastic substrate, a resin film, a first silicon oxide layer, and a second silicon oxide layer. The resin film is provided on the plastic substrate. The resin film is formed of a cured resin. The first silicon oxide layer is provided on a film surface of the resin film on an opposite side from the plastic substrate. The second silicon oxide layer is provided on the first silicon oxide layer. The second silicon oxide layer has a greater density and a smaller thickness than the first silicon oxide layer.

Abstract: The tube is stretchable. The tube is stretched by applying tension in a longitudinal direction. The tube returns to its short state by releasing the above-described tension applied in the longitudinal direction. A plurality of protrusions are formed on an inner surface of the tube. Each of the plurality of protrusions extends in a circumferential direction. The plurality of protrusions are arranged side by side in the longitudinal direction of the tube. A pitch of the protrusions is less than or equal to 1.5 ?m.

Abstract: An imaging apparatus includes: a solid-state imaging device including a semiconductor substrate, a plurality of photoelectric conversion elements provided in the semiconductor substrate and a spectral element which is provided over the plurality of photoelectric conversion elements that are consecutive in a straight-line manner, in which a trapezoidal opening longitudinal in a direction from a bottom side into which light incident on the plurality of photoelectric conversion elements is introduced to a top side is provided, and which makes a spectral separation occur in the longitudinal direction by interference between the incident light and light reflected from an inner side surface of the trapezoidal opening; and a polarizing element which is provided on an optical path from a photographic subject to the solid-state imaging device and which allows polarized light to be transmitted therethrough.

Abstract: A solid-state imaging device includes a plurality of photoelectric conversion elements provided at a surface portion of a semiconductor substrate by being arranged in a form of a two-dimensional array, spectral elements each provided on a number of the photoelectric conversion elements which are arranged linearly, a trapezoidal opening which is longitudinally elongated in a direction from a base toward an upper side thereof and which introduces incident light to the number of the photoelectric conversion elements being provided in each of the spectral elements, so as to cause spectral separation in the longitudinal direction by interference between the incident light and light reflected on inner side surfaces of the trapezoidal opening and a signal reading unit for reading a signal which is detected by each of the number of the photoelectric conversion elements arranged in the longitudinal direction by receiving the light incident through the trapezoidal opening.

Abstract: A spectroscopy device that separates input light into a plurality of wavelength ranges. A metal body has a hole or aperture which is open on the upper side. The hole or aperture is formed in a polygonal shape having at least a pair of opposite faces not parallel to each other in horizontal cross-section. Inner side faces of the hole or aperture are finished as mirror like reflection surfaces. Polarized input light inputted from the opening to the hole or aperture is reflected by the reflection surfaces and a standing wave is generated inside of the hole or aperture by self interference, whereby the input light is separated into a plurality of wavelength ranges.

Abstract: A solid-state image pickup apparatus selects, in a first image pickup circumstance in which dark current is liable to occur in vertical transfer paths of an array of photo-sensors, a first transfer mode in which the potential well capacity in the vertical transfer paths is relatively small, and, in a second image pickup circumstance in which the dark current is small in quantity, a second transfer mode which is greater in potential well capacity than the first transfer mode. As a positive voltage applied to the read-out gates of the photo-sensors, a first voltage mode indicating a relatively low positive voltage that suppresses impact ionization is set in the first image pickup circumstance, and, a second voltage mode indicating a positive voltage higher than in the first voltage mode is set in the second image pickup circumstance so as to cause the impact ionization.

Abstract: A solid-state imaging device comprises: a semiconductor substrate; a plurality of photoelectric conversion elements formed in a surface portion of the semiconductor substrate in the form of a two-dimensional array so as to comprise a plurality of sets, each comprising a subset of the photoelectric conversion elements arranged in one direction; charge transfer paths each formed at a side portion of the subset of the photoelectric conversion elements to cause a signal charge of the photoelectric conversion elements be read out when a readout pulse is applied and cause the signal charge which has been read out to be transferred when a transfer pulse is applied; and an electrically conductive light shielding film which is laminated on a surface of the semiconductor substrate through an insulating layer and has openings immediately above each of the photoelectric conversion elements.

Abstract: An imaging apparatus includes: a solid-state imaging device including a semiconductor substrate, a plurality of photoelectric conversion elements provided in the semiconductor substrate and a spectral element which is provided over the plurality of photoelectric conversion elements that are consecutive in a straight-line manner, in which a trapezoidal opening longitudinal in a direction from a bottom side into which light incident on the plurality of photoelectric conversion elements is introduced to a top side is provided, and which makes a spectral separation occur in the longitudinal direction by interference between the incident light and light reflected from an inner side surface of the trapezoidal opening; and a polarizing element which is provided on an optical path from a photographic subject to the solid-state imaging device and which allows polarized light to be transmitted therethrough.

Abstract: A solid-state imaging device includes a plurality of photoelectric conversion elements provided at a surface portion of a semiconductor substrate by being arranged in a form of a two-dimensional array, spectral elements each provided on a number of the photoelectric conversion elements which are arranged linearly, a trapezoidal opening which is longitudinally elongated in a direction from a base toward an upper side thereof and which introduces incident light to the number of the photoelectric conversion elements being provided in each of the spectral elements, so as to cause spectral separation in the longitudinal direction by interference between the incident light and light reflected on inner side surfaces of the trapezoidal opening and a signal reading unit for reading a signal which is detected by each of the number of the photoelectric conversion elements arranged in the longitudinal direction by receiving the light incident through the trapezoidal opening.

Abstract: A CCD type solid-state imaging device includes plural pixels 2 that are arranged and formed on a semiconductor substrate in a two-dimensional array, plural vertical charge transfer paths 3 each of which extends along a corresponding pixel column formed of the pixels 2, and a horizontal charge transfer path 4 that is formed along end portions, in a transfer direction, of the vertical charge transfer paths 3. A physical structure of the horizontal charge transfer path 4 is such a large capacity structure that a signal charge having an amount larger than a maximum amount of a signal charge transferred by each vertical charge transfer path 3 can be transferred.

Abstract: A spectroscopy device that separates input light into a plurality of wavelength ranges. A metal body has a hole or aperture which is open on the upper side. The hole or aperture is formed in a polygonal shape having at least a pair of opposite faces not parallel to each other in horizontal cross-section. Inner side faces of the hole or aperture are finished as mirror like reflection surfaces. Polarized input light inputted from the opening to the hole or aperture is reflected by the reflection surfaces and a standing wave is generated inside of the hole or aperture by self interference, whereby the input light is separated into a plurality of wavelength ranges.

Abstract: A solid-state image pickup apparatus selects, in a first image pickup circumstance in which dark current is liable to occur in vertical transfer paths of an array of photo-sensors, a first transfer mode in which the potential well capacity in the vertical transfer paths is relatively small, and, in a second image pickup circumstance in which the dark current is small in quantity, a second transfer mode which is greater in potential well capacity than the first transfer mode. As a positive voltage applied to the read-out gates of the photo-sensors, a first voltage mode indicating a relatively low positive voltage that suppresses impact ionization is set in the first image pickup circumstance, and, a second voltage mode indicating a positive voltage higher than in the first voltage mode is set in the second image pickup circumstance so as to cause the impact ionization.

Abstract: A solid-state imaging device comprises: a semiconductor substrate; a plurality of photoelectric conversion elements formed in a surface portion of the semiconductor substrate in the form of a two-dimensional array so as to comprise a plurality of sets, each comprising a subset of the photoelectric conversion elements arranged in one direction; charge transfer paths each formed at a side portion of the subset of the photoelectric conversion elements to cause a signal charge of the photoelectric conversion elements be read out when a readout pulse is applied and cause the signal charge which has been read out to be transferred when a transfer pulse is applied; and an electrically conductive light shielding film which is laminated on a surface of the semiconductor substrate through an insulating layer and has openings immediately above each of the photoelectric conversion elements.

Abstract: A card convey device includes a card convey unit, a punching unit, a counting unit, and a control unit. The card convey unit selectively conveys a card in a discharging direction and an opposite direction thereto. The punching unit punches the card which slows down, while the card is conveyed by the card convey unit in the discharging direction. The counting unit is enabled after a punching operation is performed by the punching unit, and counts the number of times of repetition of a reciprocal card convey operation in the opposite direction and the discharging direction. The control unit controls a convey operation of the card convey unit and repeatedly reciprocally conveys the card in the opposite direction and the discharging direction until the count value of the enabled counting unit reaches a predetermined count value. When the count value of the counting unit reaches the predetermined count value, the control unit conveys the card in the discharging direction and discharges the card.

Abstract: A process for producing a ceramic product using sludge ashes comprises the steps of (i) mixing at least ashes obtained by burning a sludge which has been obtained by the treatment of sewage and a plastic ceramic raw material to prepare a first body, (ii) mixing at least a plastic ceramic raw material and a fusible material to prepare a second body, (iii) supplying the first and second bodies into a matrix of a molding machine such that the first and second bodies form a lower, larger layer and an upper, smaller layer which covers the lower layer, respectively, (iv) molding the whole of the first and second bodies into an object with a desired shape, and (v) firing the molding to produce a two-layer ceramic product.

Abstract: The invention provides a process for producing ceramic products using, as one of the materials, the sludge obtained by sewage treatment. The invention thus not only makes the sludge treatment unnecessary, but makes the sludge useful as a material for products. A plastic ceramic raw material and, if required, another raw material are added to either the sludge or the ashes obtained by burning the sludge, so as to prepare a body. The body thus obtained is molded into a desired shape, and fired to produce a ceramic product. The firing process prevents the product, containing the sludge, from emitting an offensive odor or being decomposed. The product may be used as a tile, brick block, or the like. Production conditions such as the proportion of each raw material used and the like may be suitably selected to obtain a ceramic product with a desired characteristic in respect of water permeability, from almost no permeability to a very high permeability.