Abstract: Disclosed is an ALD device in which a shower head is disposed at a position opposed to a film formation surface of a target workpiece in a chamber and has raw material gas ejection ports and OH* forming gas ejection ports alternately arranged at predetermined intervals in two film-formation-surface directions so as to face the film formation surface. The OH* forming gas ejection ports respectively include first ejection ports for ozone gas ejection and second ejection ports for unsaturated hydrocarbon gas ejection. An oxide film is formed on the film formation surface by ejecting a raw material gas from the raw material gas ejection ports and ejecting an ozone gas and an unsaturated hydrocarbon gas from the first and second ejection ports of the OH* forming gas ejection ports, respectively, while moving the target workpiece along the two film-formation-surface directions.

Abstract: Disclosed is a degradable film (1) in which a barrier layer (3) is disposed on a surface of a water-soluble polymer layer (2). The water-soluble polymer layer (2) is made of a water-soluble polymer such as polyvinyl alcohol or polyvinyl pyrrolidone. The barrier layer (3) is made of silicon oxide or silicon oxynitride. The barrier layer (3) is formed on the water-soluble polymer layer (2) by a CVD process with the supply of a raw material gas containing a precursor of a substance that forms the barrier layer (3), an ozone gas with an oxygen concentration of 20 vol % or higher and an unsaturated hydrocarbon gas to the water-soluble polymer layer (2).

Abstract: A reforming device (1) is provided with, on one end side of a chamber (2), a gas supply part (3) and, on the other end side of the chamber (2), a gas discharge part (4). A support part (5) for supporting a porous material (10) is provided between the gas supply part (3) and the gas discharge part (4) inside the chamber (4). Then, the unsaturated hydrocarbon gas of an unsaturated hydrocarbon supply device (31) and the ozone gas of an ozone generation device (32) are supplied into the chamber (2) via the gas supply part (3) so as to reform the outer-peripheral-side surface and the inner side surface of the porous material (10) accommodated inside the chamber (2). The gas inside the chamber (2) is sucked by the gas discharge part (4) and discharged to the outside of the chamber (2).

Abstract: An atomic layer deposition apparatus (1) is equipped with a processing substrate (2) provided in a vacuum container (3), and a shower head (4). The processing substrate (2) is provided in the vacuum container (3), and the shower head (4) is provided to be opposed to a processing surface of the processing substrate (2). A high-concentration ozone gas, an unsaturated hydrocarbon gas, and an ALD source gas are supplied from the shower head (4) to the processing substrate (2). The apparatus (1) repeats four steps of an oxidizing agent supplying step of supplying the high-concentration ozone gas and the unsaturated hydrocarbon gas into the vacuum container (3), an oxidizing agent purging step of discharging the gas supplied in the oxidizing agent supplying step, a source gas supplying step of supplying a source gas to the vacuum container (3), and a source gas purging step of discharging the source gas supplied to the vacuum container (3), to form an oxide film on the surface of the processing substrate (2).

Abstract: Disclosed is an ALD device in which a shower head is disposed at a position opposed to a film formation surface of a target workpiece in a chamber and has raw material gas ejection ports and OH* forming gas ejection ports alternately arranged at predetermined intervals in two film-formation-surface directions so as to face the film formation surface. The OH* forming gas ejection ports respectively include first ejection ports for ozone gas ejection and second ejection ports for unsaturated hydrocarbon gas ejection. An oxide film is formed on the film formation surface by ejecting a raw material gas from the raw material gas ejection ports and ejecting an ozone gas and an unsaturated hydrocarbon gas from the first and second ejection ports of the OH* forming gas ejection ports, respectively, while moving the target workpiece along the two film-formation-surface directions.

Abstract: A reforming device (1) is provided with, on one end side of a chamber (2), a gas supply part (3) and, on the other end side of the chamber (2), a gas discharge part (4). A support part (5) for supporting a porous material (10) is provided between the gas supply part (3) and the gas discharge part (4) inside the chamber (4). Then, the unsaturated hydrocarbon gas of an unsaturated hydrocarbon supply device (31) and the ozone gas of an ozone generation device (32) are supplied into the chamber (2) via the gas supply part (3) so as to reform the outer-peripheral-side surface and the inner side surface of the porous material (10) accommodated inside the chamber (2). The gas inside the chamber (2) is sucked by the gas discharge part (4) and discharged to the outside of the chamber (2).

Abstract: An atomic layer deposition apparatus (1) is equipped with a processing substrate (2) provided in a vacuum container (3), and a shower head (4). The processing substrate (2) is provided in the vacuum container (3), and the shower head (4) is provided to be opposed to a processing surface of the processing substrate (2). A high-concentration ozone gas, an unsaturated hydrocarbon gas, and an ALD source gas are supplied from the shower head (4) to the processing substrate (2). The apparatus (1) repeats four steps of an oxidizing agent supplying step of supplying the high-concentration ozone gas and the unsaturated hydrocarbon gas into the vacuum container (3), an oxidizing agent purging step of discharging the gas supplied in the oxidizing agent supplying step, a source gas supplying step of supplying a source gas to the vacuum container (3), and a source gas purging step of discharging the source gas supplied to the vacuum container (3), to form an oxide film on the surface of the processing substrate (2).

Abstract: Disclosed is an oxide film forming device including a furnace body in which a workpiece is placed and a furnace cover. A mixed gas diffusion part is disposed on an inner side of the furnace cover via a shield plate. A mixed gas buffer space is provided in the mixed gas diffusion part. A shower head plate is disposed on the mixed gas diffusion part and opposed to the workpiece at a distance of 1 to 100 mm away from the workpiece. An ozone gas buffer space is provided in the furnace cover. A gas flow diffusion plate is disposed in the ozone gas buffer space. The shower head plate has formed therein first slits through which an ozone gas flows and second slits through which a mixed gas flows. The first slits and the second slits are alternately arranged side by side in a short-dimension direction of the slits.

Abstract: An atomic layer deposition apparatus (1) is equipped with a processing substrate (2) provided in a vacuum container (3), and a shower head (4). The processing substrate (2) is provided in the vacuum container (3), and the shower head (4) is provided to be opposed to a processing surface of the processing substrate (2). A high-concentration ozone gas, an unsaturated hydrocarbon gas, and an ALD source gas are supplied from the shower head (4) to the processing substrate (2). The apparatus (1) repeats four steps of an oxidizing agent supplying step of supplying the high-concentration ozone gas and the unsaturated hydrocarbon gas into the vacuum container (3), an oxidizing agent purging step of discharging the gas supplied in the oxidizing agent supplying step, a source gas supplying step of supplying a source gas to the vacuum container (3), and a source gas purging step of discharging the source gas supplied to the vacuum container (3), to form an oxide film on the surface of the processing substrate (2).

Abstract: Disclosed is an oxide film forming device including a furnace body in which a workpiece is placed and a furnace cover. A mixed gas diffusion part is disposed on an inner side of the furnace cover via a shield plate. A mixed gas buffer space is provided in the mixed gas diffusion part. A shower head plate is disposed on the mixed gas diffusion part and opposed to the workpiece at a distance of 1 to 100 mm away from the workpiece. An ozone gas buffer space is provided in the furnace cover. A gas flow diffusion plate is disposed in the ozone gas buffer space. The shower head plate has formed therein first slits through which an ozone gas flows and second slits through which a mixed gas flows. The first slits and the second slits are alternately arranged side by side in a short-dimension direction of the slits.

Abstract: Disclosed is a degradable film (1) in which a barrier layer (3) is disposed on a surface of a water-soluble polymer layer (2). The water-soluble polymer layer (2) is made of a water-soluble polymer such as polyvinyl alcohol or polyvinyl pyrrolidone. The barrier layer (3) is made of silicon oxide or silicon oxynitride. The barrier layer (3) is formed on the water-soluble polymer layer (2) by a CVD process with the supply of a raw material gas containing a precursor of a substance that forms the barrier layer (3), an ozone gas with an oxygen concentration of 20 vol % or higher and an unsaturated hydrocarbon gas to the water-soluble polymer layer (2).

Abstract: It is a method for modifying a resin (6), the method for hydrophilizing the surface of the resin (6). High-concentration ozone gas and an unsaturated hydrocarbon gas are supplied to the surface of the resin (6), and the surface of the resin (6) is hydrophilized. The high-concentration ozone gas is generated by re-vaporizing liquid ozone obtained by liquefaction and fractional distillation of an ozone-containing gas. Ozone gas having an ozone concentration of 50 vol % or greater is used as the high-concentration ozone gas. A gas containing an unsaturated hydrocarbon with a carbon number of 10 or lower which has a double bond or a triple bond is used as the unsaturated hydrocarbon gas.

Abstract: It is a modification apparatus (1) of a resin film (6) for making the surface of the resin film (6) hydrophilic. The modification apparatus (1) has a chamber (2), an unsaturated hydrocarbon supply device (3), and an ozone generating device (4). In the chamber (2), there are provided a supply roll (7) onto which the resin film (6) is previously wound, a take-up roll (8), and a shower head (10). While the resin film (6) wound onto the supply roll (7) is wound onto the take-up roll (8), a high-concentration ozone gas and an unsaturated hydrocarbon gas are supplied to the surface of the resin film (6) moving between the supply roll (7) and the take-up roll (8).

Abstract: It is a modification apparatus (1) of a resin film (6) for making the surface of the resin film (6) hydrophilic. The modification apparatus (1) has a chamber (2), an unsaturated hydrocarbon supply device (3), and an ozone generating device (4). In the chamber (2), there are provided a supply roll (7) onto which the resin film (6) is previously wound, a take-up roll (8), and a shower head (10). While the resin film (6) wound onto the supply roll (7) is wound onto the take-up roll (8), a high-concentration ozone gas and an unsaturated hydrocarbon gas are supplied to the surface of the resin film (6) moving between the supply roll (7) and the take-up roll (8).

Abstract: It is a method for modifying a resin (6), the method for hydrophilizing the surface of the resin (6). High-concentration ozone gas and an unsaturated hydrocarbon gas are supplied to the surface of the resin (6), and the surface of the resin (6) is hydrophilized. The high-concentration ozone gas is generated by re-vaporizing liquid ozone obtained by liquefaction and fractional distillation of an ozone-containing gas. Ozone gas having an ozone concentration of 50 vol % or greater is used as the high-concentration ozone gas. A gas containing an unsaturated hydrocarbon with a carbon number of 10 or lower which has a double bond or a triple bond is used as the unsaturated hydrocarbon gas.

Abstract: An oxide film forming equipment is provided with a reactor 10 in which a heater unit 14 holding a substrate 100 is stored, a piping 11 provided with a material gas introducing valve V1 for introducing a material gas containing organic silicon or organic metal into the reactor, a piping 12 provided with an ozone containing gas introducing valve V2 for introducing an ozone containing gas into the reactor 10, and a piping 13 provided with an exhaustion valve 13 for exhausting a gas in the reactor 10. When the material gas introducing valve V1, the ozone containing gas introducing valve V2, and the exhaustion valve V3 perform open-and-closure operations to alternately supply the material gas and the ozone containing gas into the reactor 10, the ozone containing gas introducing valve V2 operates to fall an ozone concentration of the ozone containing gas in a range from 0.1 vol % to 100 vol % and the heater unit adjusts a temperature of the substrate from a room temperature to 400° C.

Abstract: A semiconductor device has PN junction in architecture of PN.sup.- N.sup.+, P.sup.+ NN.sup.+, PIN, or P.gamma.N. Such semiconductor device comprises a first surface layer dopped with a first type impurity at a predetermined first concentration for forming a high resistant layer, a second layer formed below the first layer and dopped with a second type impurity which is different from the first impurity at a predetermined limited second concentration, the second layer forming PN junction between the first layer, and a third layer formed below the second layer and dopped with the second impurity at a predetermined third concentration higher than the second concentration.