Patents by Inventor Mitsuru Meno

Mitsuru Meno has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method
    Patent number: 8492276
    Abstract: A chemical mechanical polishing aqueous dispersion is used to polish a polishing target that includes an interconnect layer that contains tungsten. The chemical mechanical polishing aqueous dispersion includes: (A) a cationic water-soluble polymer; (B) an iron (III) compound; and (C) colloidal silica particles. The content (MA) (mass %) of the cationic water-soluble polymer (A) and the content (MB) (mass %) of the iron (III) compound (B) satisfy the relationship “MA/MB=0.004 to 0.1”. The chemical mechanical polishing aqueous dispersion has a pH of 1 to 3.
    Type: Grant
    Filed: August 7, 2009
    Date of Patent: July 23, 2013
    Assignees: JSR Corporation, Kabushiki Kaisha Toshiba
    Inventors: Taichi Abe, Hirotaka Shida, Akihiro Takemura, Mitsuru Meno, Shinichi Hirasawa, Kenji Iwade, Takeshi Nishioka
  • AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHING AND METHOD FOR PREPARING THE SAME, KIT FOR PREPARING AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHING, AND CHEMICAL MECHANICAL POLISHING METHOD FOR SEMICONDUCTOR DEVICE
    Publication number: 20100221918
    Abstract: A chemical mechanical polishing aqueous dispersion includes (A) a sulfonic acid group-containing water-soluble polymer, (B) an amino acid, (C) abrasive grains, and (D) an oxidizing agent.
    Type: Application
    Filed: August 12, 2008
    Publication date: September 2, 2010
    Applicant: JSR Corporation
    Inventors: Akihiro Takemura, Mitsuru Meno, Yuuji Shimoyama, Hirotaka Shida
  • CHEMICAL MECHANICAL POLISHING AQUEOUS DISPERSION AND CHEMICAL MECHANICAL POLISHING METHOD
    Publication number: 20100075501
    Abstract: A chemical mechanical polishing aqueous dispersion is used to polish a polishing target that includes an interconnect layer that contains tungsten. The chemical mechanical polishing aqueous dispersion includes: (A) a cationic water-soluble polymer; (B) an iron (III) compound; and (C) colloidal silica particles. The content (MA) (mass %) of the cationic water-soluble polymer (A) and the content (MB) (mass %) of the iron (III) compound (B) satisfy the relationship “MA/MB=0.004 to 0.1”. The chemical mechanical polishing aqueous dispersion has a pH of 1 to 3.
    Type: Application
    Filed: August 7, 2009
    Publication date: March 25, 2010
    Applicants: JSR CORPORATION, Kabushiki Kaisha Toshiba
    Inventors: Taichi ABE, Hirotaka Shida, Akihiro Takemura, Mitsuru Meno, Shinichi Hirasawa, Kenji Iwade, Takeshi Nishioka
  • AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHING, PRODUCTION METHOD THEREOF, AND CHEMICAL MECHANICAL POLISHING METHOD
    Publication number: 20090325323
    Abstract: There is provided an aqueous dispersion for chemical mechanical polishing that comprises abrasives comprising: (A) 100 parts by weight of inorganic particles comprising ceria, (B) 5 to 100 parts by weight of cationic organic polymer particles, and (C) 5 to 120 parts by weight of anionic water-soluble compound. The aqueous dispersion for chemical mechanical polishing is preferably produced by a method comprising a step of adding a second liquid comprising (C) 5 to 30 wt % of anionic water-soluble compound to a first liquid comprising (A) 0.1 to 10 wt % of inorganic particles comprising ceria and (B) 5 to 100 parts by weight of cationic organic polymer particles based on 100 parts by weight of the inorganic particles (A).
    Type: Application
    Filed: July 11, 2007
    Publication date: December 31, 2009
    Applicant: JSR CORPORATION
    Inventors: Tomikazu Ueno, Norihiko Ikeda, Mitsuru Meno