Abstract: A water hydraulic test on test pipes having a wide range of sizes is conducted accurately, efficiently, and economically, by using a plurality of booster cylinders arranged in parallel with respect to a test pipe and having respective boosting ratios increasing in stages. A plurality of servo motor driven pumps arranged in parallel is used as a drive source for the plurality of booster cylinders. Before a water pressure on an output side of the booster cylinder reaches a pressure near a test pressure, the plurality of servo motor driven pumps operates simultaneously. Then, the plurality of servo motor driven pumps stops operating except one and the water pressure on the output side of the booster cylinder is increased to the test pressure by the one servo motor driven pump. During pressure increase, the plurality of booster cylinders is used in turn in order of increasing boosting ratio.

Abstract: An object is to prolong the life of a ring tool, and improve the productivity of a welded pipe. A ring tool unit is held in a downstream-side end portion of a mandrel to be inserted into a welded pipe currently being manufactured from the upstream side of a welding position, and is used as a cutting tool for continuously cutting a bead produced on the inner surface of the welded pipe, wherein the ring tool unit is formed by fitting a ring tool having a ring-like blade in a sleeve having a circular hole for holding the outer circumference of the ring tool.

Abstract: A water hydraulic test on test pipes having a wide range of sizes is conducted accurately, efficiently, and economically, by using a plurality of booster cylinders arranged in parallel with respect to a test pipe and having respective boosting ratios increasing in stages. A plurality of servo motor driven pumps arranged in parallel is used as a drive source for the plurality of booster cylinders. Before a water pressure on an output side of the booster cylinder reaches a pressure near a test pressure, the plurality of servo motor driven pumps operates simultaneously. Then, the plurality of servo motor driven pumps stops operating except one and the water pressure on the output side of the booster cylinder is increased to the test pressure by the one servo motor driven pump. During pressure increase, the plurality of booster cylinders is used in turn in order of increasing boosting ratio.

Abstract: An object is to prolong the life of a ring tool, and improve the productivity of a welded pipe. A ring tool unit is held in a downstream-side end portion of a mandrel to be inserted into a welded pipe currently being manufactured from the upstream side of a welding position, and is used as a cutting tool for continuously cutting a bead produced on the inner surface of the welded pipe, wherein the ring tool unit is formed by fitting a ring tool having a ring-like blade in a sleeve having a circular hole for holding the outer circumference of the ring tool.

Abstract: A method of forming a thin-film device includes forming an oxide-semiconductor film formed on the first electrical insulator, and forming a second electrical insulator formed on the oxide-semiconductor film, the oxide-semiconductor film defining an active layer. The oxide-semiconductor film is comprised of a first interface layer located at an interface with the first electrical insulator, a second interface layer located at an interface with the second electrical insulator, and a bulk layer other than the first and second interface layers. The method further includes oxidizing the oxide-semiconductor film to render a density of oxygen holes in at least one of the first and second interlayer layers is smaller than a density of oxygen holes in the bulk layer.

Abstract: A method of forming a thin-film device includes forming an oxide-semiconductor film formed on the first electrical insulator, and forming a second electrical insulator formed on the oxide-semiconductor film, the oxide-semiconductor film defining an active layer. The oxide-semiconductor film is comprised of a first interface layer located at an interface with the first electrical insulator, a second interface layer located at an interface with the second electrical insulator, and a bulk layer other than the first and second interface layers. The method further includes oxidizing the oxide-semiconductor film to render a density of oxygen holes in at least one of the first and second interlayer layers is smaller than a density of oxygen holes in the bulk layer.

Abstract: A method of forming a thin-film device includes forming an oxide-semiconductor film formed on the first electrical insulator, and forming a second electrical insulator formed on the oxide-semiconductor film, the oxide-semiconductor film defining an active layer. The oxide-semiconductor film is comprised of a first interface layer located at an interface with the first electrical insulating insulator, a second interface layer located at an interface with the second electrical insulator, and a bulk layer other than the first and second interface layers. The method further includes oxidizing the oxide-semiconductor film to render a density of oxygen holes in at least one of the first and second interlayer layers is smaller than a density of oxygen holes in the bulk layer.

Abstract: A method of forming a thin-film device includes forming an oxide-semiconductor film formed on the first electrical insulator, and forming a second electrical insulator formed on the oxide-semiconductor film, the oxide-semiconductor film defining an active layer. The oxide-semiconductor film is comprised of a first interface layer located at an interface with the first electrical insulating insulator, a second interface layer located at an interface with the second electrical insulator, and a bulk layer other than the first and second interface layers. The method further includes oxidizing the oxide-semiconductor film to render a density of oxygen holes in at least one of the first and second interlayer layers is smaller than a density of oxygen holes in the bulk layer.

Abstract: A method of forming a thin-film device includes forming an oxide-semiconductor film formed on the first electrical insulator, and forming a second electrical insulator formed on the oxide-semiconductor film, the oxide-semiconductor film defining an active layer. The oxide-semiconductor film is comprised of a first interface layer located at an interface with the first electrical insulating insulator, a second interface layer located at an interface with the second electrical insulator, and a bulk layer other than the first and second interface layers. The method further includes oxidizing the oxide-semiconductor film to render a density of oxygen holes in at least one of the first and second interlayer layers is smaller than a density of oxygen holes in the bulk layer.

Abstract: A thin film transistor using an amorphous oxide thin film for an active layer, wherein: the amorphous oxide thin film includes, as main components, indium (In), oxygen (O), and a metal element (M) selected from the group consisting of silicon (Si), aluminum (Al), germanium (Ge), tantalum (Ta), magnesium (Mg) and titanium (Ti); an atomic ratio of M to In in this amorphous oxide thin film is 0.1 or more and 0.4 or less; and carrier density in the amorphous oxide thin film is 1×1015 cm?3 or more and 1×1019 cm?1 or less.

Abstract: A thin-film transistor array includes an electrically insulating substrate, a plurality of thin-film transistors arranged in a matrix on the substrate, and each including a channel, a source, and a drain each comprised of an oxide-semiconductor film, a pixel electrode integrally formed with the drain, a source signal line through which a source signal is transmitted to a group of thin-film transistors, a gate signal line through which a gate signal is transmitted to a group of thin-film transistors, a source terminal formed at an end of the source signal line, and a gate terminal formed at an end of the gate signal line. The source terminal and the gate terminal are formed in the same layer as a layer in which the channel is formed. The source terminal and the gate terminal have the same electric conductivity as that of the pixel electrode.

Abstract: An electronic device of the present invention includes a first substrate provided with a thin film active element, having a thickness of 200 ?m or lower, and a second substrate formed with a high thermal conductivity portion. The second substrate is applied to one surface of the two surfaces of the first substrate, i.e., the surface being the side other than the side that formed with the thin film active element. The thin film active element has a maximum power consumption of 0.01 to 1 mW. The high thermal conductivity portion is a region that corresponds to the position of the thin film active element and whose thermal conductivity falls within the range from 0.1 to 4 W/cm·deg.

Abstract: A printing medium includes: a rectangular lens sheet that has a surface formed in a predetermined lens shape; and a thin base that is fixed to a rear surface of the lens sheet on which no lens is formed and has an extending portion extending from one side of the lens sheet to the outside. In the printing medium, when a region corresponding to the rear surface of the lens sheet is referred to as a unit region, the extending portion includes a plurality of unit regions adjacent to one another with adjacent portions, which are common sides, interposed therebetween, and a first printing surface and a second printing surface having predetermined images formed thereon are formed in corresponding unit regions on one surface of the base that is fixed to the rear surface of the lens sheet or the other surface of the base. In addition, at least one unit region is additionally interposed between the unit region where the first printing surface is formed and the unit region where the second printing surface is formed.

Abstract: A method of forming a thin-film device includes forming an oxide-semiconductor film formed on the first electrical insulator, and forming a second electrical insulator formed on the oxide-semiconductor film, the oxide-semiconductor film defining an active layer. The oxide-semiconductor film is comprised of a first interface layer located at an interface with the first electrical insulating insulator, a second interface layer located at an interface with the second electrical insulator, and a bulk layer other than the first and second interface layers. The method further includes oxidizing the oxide-semiconductor film to render a density of oxygen holes in at least one of the first and second interlayer layers is smaller than a density of oxygen holes in the bulk layer.

Abstract: A laser irradiation process includes: scanning a substrate with laser having a predetermined lasing frequency at different irradiation intensities to form a plurality of first irradiation areas corresponding to the irradiation intensities; illuminating the first irradiation areas to reflected light receive from the first irradiation areas; determining microcrystallization intensity based on the received reflected light; and determining irradiation intensity based on the thus determined microcrystallization intensity. The laser irradiation process uses the irradiation intensity for irradiating a polycrystalline film in a product semiconductor device.

Abstract: A thin-film device includes a first electrical insulator, an oxide-semiconductor film formed on the first electrical insulator, and a second electrical insulator formed on the oxide-semiconductor film, the oxide-semiconductor film defining an active layer. The oxide-semiconductor film is comprised of a first interface layer located at an interface with the first electrical insulating insulator, a second interface layer located at an interface with the second electrical insulator, and a bulk layer other than the first and second interface layers. A density of oxygen holes in at least one of the first and second interlayer layers is smaller than a density of oxygen holes in the bulk layer.

Abstract: A thin-film transistor array includes an electrically insulating substrate, a plurality of thin-film transistors arranged in a matrix on the substrate, and each including a channel, a source, and a drain each comprised of an oxide-semiconductor film, a pixel electrode integrally formed with the drain, a source signal line through which a source signal is transmitted to a group of thin-film transistors, a gate signal line through which a gate signal is transmitted to a group of thin-film transistors, a source terminal formed at an end of the source signal line, and a gate terminal formed at an end of the gate signal line. The source terminal and the gate terminal are formed in the same layer as a layer in which the channel is formed. The source terminal and the gate terminal have the same electric conductivity as that of the pixel electrode.

Abstract: A thin-film transistor array includes an electrically insulating substrate, a plurality of thin-film transistors arranged in a matrix on the substrate, and each including a channel, a source, and a drain each comprised of an oxide-semiconductor film, a pixel electrode integrally formed with the drain, a source signal line through which a source signal is transmitted to a group of thin-film transistors, a gate signal line through which a gate signal is transmitted to a group of thin-film transistors, a source terminal formed at an end of the source signal line, and a gate terminal formed at an end of the gate signal line. The source terminal and the gate terminal are formed in the same layer as a layer in which the channel is formed. The source terminal and the gate terminal have the same electric conductivity as that of the pixel electrode.

Abstract: A laser irradiation process includes: scanning a substrate with laser having a predetermined lasing frequency at different irradiation intensities to form a plurality of first irradiation areas corresponding to the irradiation intensities; illuminating the first irradiation areas to reflected light receive from the first irradiation areas; determining microcrystallization intensity based on the received reflected light; and determining irradiation intensity based on the thus determined microcrystallization intensity. The laser irradiation process uses the irradiation intensity for irradiating a polycrystalline film in a product semiconductor device.

Abstract: An electronic device of the present invention includes a first substrate provided with a thin film active element, having a thickness of 200 ?m or lower, and a second substrate formed with a high thermal conductivity portion. The second substrate is applied to one surface of the two surfaces of the first substrate, i.e., the surface being the side other than the side that formed with the thin film active element. The thin film active element has a maximum power consumption of 0.01 to 1 mW. The high thermal conductivity portion is a region that corresponds to the position of the thin film active element and whose thermal conductivity falls within the range from 0.1 to 4 W/cm·deg.