Patents by Inventor Mitsuru Okuno

Mitsuru Okuno has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • NEGATIVE ELECTRODE SLURRY FOR LITHIUM ION SECONDARY BATTERY, METHOD FOR MANUFACTURING NEGATIVE ELECTRODE FOR LITHIUM ION SECONDARY BATTERY, METHOD FOR MANUFACTURING LITHIUM ION SECONDARY BATTERY, NEGATIVE ELECTRODE FOR LITHIUM ION SECONDARY BATTERY, AND LITHIUM ION SECONDARY BATTERY
    Publication number: 20240145718
    Abstract: A negative electrode slurry for a lithium ion secondary battery, according to an aspect of the present disclosure, comprises a negative electrode active material, a thickener, a preservative component, and a solvent, the thickener comprising carboxymethyl-cellulose or a salt thereof, the solvent comprising water, and the preservative component comprising a cyclic hydroxamic acid ethanolamine salt.
    Type: Application
    Filed: December 21, 2021
    Publication date: May 2, 2024
    Applicant: Panasonic Intellectual Property Management Co., Ltd.
    Inventors: Satoshi Komi, Yukiho Okuno, Mitsuru Iwai, Shuji Tsutsumi
  • NEGATIVE ELECTRODE SLURRY FOR LITHIUM ION SECONDARY BATTERY, METHOD FOR MANUFACTURING NEGATIVE ELECTRODE FOR LITHIUM ION SECONDARY BATTERY, METHOD FOR MANUFACTURING LITHIUM ION SECONDARY BATTERY, NEGATIVE ELECTRODE FOR LITHIUM ION SECONDARY BATTERY, AND LITHIUM ION SECONDARY BATTERY
    Publication number: 20240136526
    Abstract: A negative electrode slurry for a lithium ion secondary battery, according to the present disclosure, is characterized by comprising a negative electrode active material, a thickener, a preservative component, and a solvent, the thickener comprising carboxymethyl-cellulose or a salt thereof, the solvent comprising water, and the preservative component comprising a compound having a tropone skeleton.
    Type: Application
    Filed: December 21, 2021
    Publication date: April 25, 2024
    Applicant: Panasonic Intellectual Property Management Co., Ltd.
    Inventors: Satoshi Komi, Yukiho Okuno, Mitsuru Iwai, Shuji Tsutsumi
  • Photomask, manufacturing apparatus and method of semiconductor device using the same, and photomask feature layout method
    Patent number: 8426087
    Abstract: A photomask is provided which can have a large depth of focus even if four main features are annularly arranged at random. The photomask has four annularly arranged main features based on design information of a circuit feature to be formed on a wafer, and a sub-feature is laid at an intersection point of two diagonal lines of a quadrangle formed by four vertices inside the four main features in order to increase a depth of focus of an exposure feature. Therefore, the depth of focus can be increased even if the main features are not arranged at a constant pitch.
    Type: Grant
    Filed: July 21, 2011
    Date of Patent: April 23, 2013
    Assignee: Renesas Electronics Corporation
    Inventors: Ayumi Minamide, Mitsuru Okuno, Akemi Moniwa, Manabu Ishibashi
  • Pattern formation method using levenson-type mask and method of manufacturing levenson-type mask
    Patent number: 8367309
    Abstract: A method of forming a pattern including a first pattern portion having a first minimum dimension and a second pattern portion having a second minimum dimension includes a first exposure step of performing exposure using a Levenson-type mask and a second exposure step of performing exposure using a half tone-type mask. When second minimum dimension is 1.3 time or more than the first minimum dimension, the exposure amount of the second exposure step is set to be equal to or smaller than the exposure amount of the first exposure step.
    Type: Grant
    Filed: October 12, 2011
    Date of Patent: February 5, 2013
    Assignee: Renesas Electronics Corporation
    Inventors: Mitsuru Okuno, Akemi Moniwa
  • PHOTOMASK, MANUFACTURING APPARATUS AND METHOD OF SEMICONDUCTOR DEVICE USING THE SAME, AND PHOTOMASK FEATURE LAYOUT METHOD
    Publication number: 20120052419
    Abstract: A photomask is provided which can have a large depth of focus even if four main features are annularly arranged at random. The photomask has four annularly arranged main features based on design information of a circuit feature to be formed on a wafer, and a sub-feature is laid at an intersection point of two diagonal lines of a quadrangle formed by four vertices inside the four main features in order to increase a depth of focus of an exposure feature. Therefore, the depth of focus can be increased even if the main features are not arranged at a constant pitch.
    Type: Application
    Filed: July 21, 2011
    Publication date: March 1, 2012
    Inventors: Ayumi MINAMIDE, Mitsuru Okuno, Akemi Moniwa, Manabu Ishibashi
  • PATTERN FORMATION METHOD USING LEVENSON-TYPE MASK AND METHOD OF MANUFACTURING LEVENSON-TYPE MASK
    Publication number: 20120028194
    Abstract: A method of forming a pattern including a first pattern portion having a first minimum dimension and a second pattern portion having a second minimum dimension includes a first exposure step of performing exposure using a Levenson-type mask and a second exposure step of performing exposure using a half tone-type mask. When second minimum dimension is 1.3 time or more than the first minimum dimension, the exposure amount of the second exposure step is set to be equal to or smaller than the exposure amount of the first exposure step.
    Type: Application
    Filed: October 12, 2011
    Publication date: February 2, 2012
    Applicant: Renesas Electronics Corporation
    Inventors: Mitsuru OKUNO, Akemi MONIWA
  • Pattern formation method using levenson-type mask and method of manufacturing levenson-type mask
    Patent number: 8071264
    Abstract: A method of forming a pattern including a first pattern portion having a first minimum dimension and a second pattern portion having a second minimum dimension includes a first exposure step of performing exposure using a Levenson-type mask and a second exposure step of performing exposure using a half tone-type mask. When second minimum dimension is 1.3 time or more than the first minimum dimension, the exposure amount of the second exposure step is set to be equal to or smaller than the exposure amount of the first exposure step.
    Type: Grant
    Filed: March 17, 2011
    Date of Patent: December 6, 2011
    Assignee: Renesas Electronics Corporation
    Inventors: Mitsuru Okuno, Akemi Moniwa
  • PATTERN FORMATION METHOD USING LEVENSON-TYPE MASK AND METHOD OF MANUFACTURING LEVENSON-TYPE MASK
    Publication number: 20110165520
    Abstract: A method of forming a pattern including a first pattern portion having a first minimum dimension and a second pattern portion having a second minimum dimension includes a first exposure step of performing exposure using a Levenson-type mask and a second exposure step of performing exposure using a half tone-type mask. When second minimum dimension is 1.3 time or more than the first minimum dimension, the exposure amount of the second exposure step is set to be equal to or smaller than the exposure amount of the first exposure step.
    Type: Application
    Filed: March 17, 2011
    Publication date: July 7, 2011
    Applicant: RENESAS ELECTRONICS CORPORATION
    Inventors: Mitsuru OKUNO, Akemi Moniwa
  • Pattern formation method using levenson-type mask and method of manufacturing levenson-type mask
    Patent number: 7935462
    Abstract: A method of forming a pattern including a first pattern portion having a first minimum dimension and a second pattern portion having a second minimum dimension includes a first exposure step of performing exposure using a Levenson-type mask and a second exposure step of performing exposure using a half tone-type mask. When second minimum dimension is 1.3 time or more than the first minimum dimension, the exposure amount of the second exposure step is set to be equal to or smaller than the exposure amount of the first exposure step.
    Type: Grant
    Filed: February 3, 2010
    Date of Patent: May 3, 2011
    Assignee: Renesas Electronics Corporation
    Inventors: Mitsuru Okuno, Akemi Moniwa
  • PATTERN FORMATION METHOD USING LEVENSON-TYPE MASK AND METHOD OF MANUFACTURING LEVENSON-TYPE MASK
    Publication number: 20100136487
    Abstract: A method of forming a pattern including a first pattern portion having a first minimum dimension and a second pattern portion having a second minimum dimension includes a first exposure step of performing exposure using a Levenson-type mask and a second exposure step of performing exposure using a half tone-type mask. When second minimum dimension is 1.3 time or more than the first minimum dimension, the exposure amount of the second exposure step is set to be equal to or smaller than the exposure amount of the first exposure step.
    Type: Application
    Filed: February 3, 2010
    Publication date: June 3, 2010
    Applicant: RENESAS TECHNOLOGY CORP.
    Inventors: Mitsuru OKUNO, Akemi Moniwa
  • Pattern formation method using Levenson-type mask and method of manufacturing Levenson-type mask
    Patent number: 7682760
    Abstract: A method of forming a pattern including a first pattern portion having a first minimum dimension and a second pattern portion having a second minimum dimension includes a first exposure step of performing exposure using a Levenson-type mask and a second exposure step of performing exposure using a half tone-type mask. When second minimum dimension is 1.3 time or more than the first minimum dimension, the exposure amount of the second exposure step is set to be equal to or smaller than the exposure amount of the first exposure step.
    Type: Grant
    Filed: December 13, 2006
    Date of Patent: March 23, 2010
    Assignee: Renesas Technology Corp.
    Inventors: Mitsuru Okuno, Akemi Moniwa
  • Pattern formation method using Levenson-type mask and method of manufacturing Levenson-type mask
    Publication number: 20070141480
    Abstract: A method of forming a pattern including a first pattern portion having a first minimum dimension and a second pattern portion having a second minimum dimension includes a first exposure step of performing exposure using a Levenson-type mask and a second exposure step of performing exposure using a half tone-type mask. When second minimum dimension is 1.3 time or more than the first minimum dimension, the exposure amount of the second exposure step is set to be equal to or smaller than the exposure amount of the first exposure step.
    Type: Application
    Filed: December 13, 2006
    Publication date: June 21, 2007
    Inventors: Mitsuru Okuno, Akemi Moniwa