Abstract: A shut-off valve control device for a refrigeration cycle includes: a leakage detection unit configured to detect leakage of a refrigerant in a refrigeration cycle including an indoor unit and an outdoor unit; a shut-off valve which is disposed in a pipe that connects the indoor unit with the outdoor unit and which can be opened and closed by supplying electric power; a power failure detection unit configured to detect a power failure; a backup power supply configured to be capable of alternatively supplying power; and a shut-off valve control circuit configured to control the shut-off valve to be closed when the leakage detection unit detects leakage of the refrigerant. The shut-off valve control circuit causes the backup power supply to be started when the power failure detection unit detects a power failure and closes the shut-off valve when the detected power failure exceeds a certain time period.

Abstract: A steel plate according to an aspect of the present invention has a predetermined chemical composition, an index Q obtained by Equation (1) is 0.00 or more, a carbon equivalent Ceq (%) obtained by Equation (2) is less than 0.800%, a ratio of a difference between a hardness at a surface layer portion and a hardness at a thickness center portion to the hardness at the surface layer portion at a room temperature is 15.0% or less, the hardness at the suffice layer portion at a room temperature is 400 or more in terms of Vickers hardness, and a steel thickness is 40 or more. Q=0.18?1.3(logT)+0.75(2.7×[C]+[Mn]+0.45×[Ni]+0.

Abstract: In a steel plate according to the present invention, a chemical composition is within a predetermined range, an ? value is 0.13 to 1.0 mass %, a ? value is 8.45 to 15.2, an yield strength is 670 to 870 N/mm2, a tensile strength is 780 to 940 N/mm2, an average grain size at ½t of the steel plate is 35 ?m or less, and a plate thickness is 25 to 200 mm. In the steel plate according to the present invention, in a case where SR is performed on the steel, a charpy absorbed energy at ?40° C. in an area in which SR is performed may be 100 J or more.

Abstract: A steel pipe with dual phase structure includes, as chemical composition, by mass %, C: 0.07% to 0.15%, Si: 0.1% to 0.5%, Mn: 0.8% to 1.9%, Nb: 0.020% to 0.10%, P: limited to 0.05% or less, S: limited to 0.01% or less, Al: limited to 0.1% or less, and a balance consisting of iron and unavoidable impurities, wherein, when [X] is amount of element X in mass %, carbon equivalent Ceq defined by Equation of Ceq=[C]+[Mn]/6 is 0.25 to 0.40 and [Nb]×[C]?0.002 is satisfied, and includes, as metallographic structure, by area %, ferrite of 80% to 98% and martensite, residual austenite, or mixture thereof of 2% to 20% in total, wherein average grain size of ferrite is 1 ?m to less than 8 ?m and average grain size of martensite, residual austenite, or mixture thereof is 0.1 ?m to 2 ?m.

Abstract: [Summary] [Object] There are provided electric resistance welded oil country tubular goods having strength corresponding to API specification 5CT P110 without a heat treatment being performed on the whole steel pipe and further having excellent toughness, and a manufacturing method of an electric resistance welded oil country tubular goods. [Solution] Electric resistance welded oil country tubular goods according to the present invention have a chemical composition that contains, in mass %, C: 0.05 to 0.12%, Si: 0.03 to 0.5%, Mn: 0.80 to 2.2%, P: 0.03% or less, S: 0.003% or less, Al: 0.08% or less, Nb: 0.01% to 0.10%, Ti: 0.005 to 0.03%, B: 0.0005 to 0.0030%, and N: 0.008% or less, and in which Ti>3.4 N is satisfied, its balance is composed of Fe and inevitable impurities, and, VC90 is 15 to 40.

Abstract: In a steel plate according to the present invention, a chemical composition is within a predetermined range, an ? value is 0.13 to 1.0 mass %, a ? value is 8.45 to 15.2, an yield strength is 670 to 870 N/mm2, a tensile strength is 780 to 940 N/mm2, an average grain size at ½t of the steel plate is 35 ?m or less, and a plate thickness is 25 to 200 mm. In the steel plate according to the present invention, in a case where SR is performed on the steel, a charpy absorbed energy at ?40° C. in an area in which SR is performed may be 100 J or more.

Abstract: Provided is a monocrystalline silicon carbide ingot containing a dopant element, wherein a maximum concentration of the dopant element is less than 5×1017 atoms/cm3 and the maximum concentration is 50 times or less than that of a minimum concentration of the dopant element. Also provided is a monocrystalline silicon carbide wafer made by cutting and polishing the monocrystalline silicon carbide ingot, wherein a electric resistivity at room temperature of the wafer is 5×103 ?cm or more. Further provided is a method for manufacturing the monocrystalline silicon carbide including growing the monocrystalline silicon carbide on a seed crystal from a sublimation material by a sublimation method. The sublimation material includes a solid material containing a dopant element, and the specific surface of the solid material containing the dopant element is 0.5 m2/g or less.

Abstract: Provided is a monocrystalline silicon carbide ingot containing a dopant element, wherein a maximum concentration of the dopant element is less than 5×1017 atoms/cm3 and the maximum concentration is 50 times or less than that of a minimum concentration of the dopant element. Also provided is a monocrystalline silicon carbide wafer made by cutting and polishing the monocrystalline silicon carbide ingot, wherein a electric resistivity at room temperature of the wafer is 5×103 ?cm or more. Further provided is a method for manufacturing the monocrystalline silicon carbide including growing the monocrystalline silicon carbide on a seed crystal from a sublimation material by a sublimation method. The sublimation material includes a solid material containing a dopant element, and the specific surface of the solid material containing the dopant element is 0.5 m2/g or less.

Abstract: The present invention provides a high resistivity, high quality, large size SiC single crystal, SiC single crystal wafer, and method of production of the same, that is, a silicon carbide single crystal containing uncompensated impurities in an atomic number density of 1×1015/cm3 or more and containing vanadium in an amount less than said uncompensated impurity concentration, silicon carbide single crystal wafer obtained by processing and polishing the silicon carbide single crystal and having an electrical resistivity at room temperature of 5×103 ?cm or more, and a method of production of a silicon carbide single crystal.

Abstract: A steel pipe with dual phase structure includes, as chemical composition, by mass %, C: 0.07% to 0.15%, Si: 0.1% to 0.5%, Mn: 0.8% to 1.9%, Nb: 0.020% to 0.10%, P: limited to 0.05% or less, S: limited to 0.01% or less, Al: limited to 0.1% or less, and a balance consisting of iron and unavoidable impurities, wherein, when [X] is amount of element X in mass %, carbon equivalent Ceq defined by Equation of Ceq=[C]+[Mn]/6 is 0.25 to 0.40 and [Nb]×[C]?0.002 is satisfied, and includes, as metallographic structure, by area %, ferrite of 80% to 98% and martensite, residual austenite, or mixture thereof of 2% to 20% in total, wherein average grain size of ferrite is 1 ?m to less than 8 ?m and average grain size of martensite, residual austenite, or mixture thereof is 0.1 ?m to 2 ?m.

Abstract: [Summary] [Object] There are provided electric resistance welded oil country tubular goods having strength corresponding to API specification 5CT P110 without a heat treatment being performed on the whole steel pipe and further having excellent toughness, and a manufacturing method of an electric resistance welded oil country tubular goods. [Solution] Electric resistance welded oil country tubular goods according to the present invention have a chemical composition that contains, in mass %, C: 0.05 to 0.12%, Si: 0.03 to 0.5%, Mn: 0.80 to 2.2%, P: 0.03% or less, S: 0.003% or less, Al: 0.08% or less, Nb: 0.01% to 0.10%, Ti: 0.005 to 0.03%, B: 0.0005 to 0.0030%, and N: 0.008% or less, and in which Ti>3.4 N is satisfied, its balance is composed of Fe and inevitable impurities, and, VC90 is 15 to 40.

Abstract: Provided is a monocrystalline silicon carbide ingot containing a dopant element, wherein a maximum concentration of the dopant element is less than 5×1017 atoms/cm3 and the maximum concentration is 50 times or less than that of a minimum concentration of the dopant element. Also provided is a monocrystalline silicon carbide wafer made by cutting and polishing the monocrystalline silicon carbide ingot, wherein a electric resistivity at room temperature of the wafer is 5×103 ?cm or more. Further provided is a method for manufacturing the monocrystalline silicon carbide including growing the monocrystalline silicon carbide on a seed crystal from a sublimation material by a sublimation method. The sublimation material includes a solid material containing a dopant element, and the specific surface of the solid material containing the dopant element is 0.5 m2/g or less.

Abstract: Provided is a monocrystalline silicon carbide ingot containing a dopant element, wherein a maximum concentration of the dopant element is less than 5×1017 atoms/cm3 and the maximum concentration is 50 times or less than that of a minimum concentration of the dopant element. Also provided is a monocrystalline silicon carbide wafer made by cutting and polishing the monocrystalline silicon carbide ingot, wherein a electric resistivity at room temperature of the wafer is 5×103 ?cm or more. Further provided is a method for manufacturing the monocrystalline silicon carbide including growing the monocrystalline silicon carbide on a seed crystal from a sublimation material by a sublimation method. The sublimation material includes a solid material containing a dopant element, and the specific surface of the solid material containing the dopant element is 0.5 m2/g or less.

Abstract: The present invention provides a semi-insulating silicon carbide single crystal characterized by having an electrical resistivity at room temperature of 1×105 ?cm or more, and a semi-insulating silicon carbide single crystal characterized by having an electrical resistivity at room temperature of 1×105 ?cm or more and vacancy pairs (bivacancies), and an semi-insulating silicon carbide single crystal characterized by having an electrical resistivity at room temperature of 1×105 ?cm or more and containing a crystal region where a position average lifetime becomes a lifetime longer than 155 ps in measurement of position lifetime at a liquid nitrogen boiling point temperature (77K) or less, and wafer obtained therefrom.

Abstract: The present invention provides a high resistivity, high quality, large size SiC single crystal, SiC single crystal wafer, and method of production of the same, that is, a silicon carbide single crystal containing uncompensated impurities in an atomic number density of 1 ×1015/cm3 or more and containing vanadium in an amount less than said uncompensated impurity concentration, silicon carbide single crystal wafer obtained by processing and polishing the silicon carbide single crystal and having an electrical resistivity at room temperature of 5×103 ?cm or more, and a method of production of a silicon carbide single crystal.

Abstract: Provided is a monocrystalline silicon carbide ingot containing a dopant element, wherein a maximum concentration of the dopant element is less than 5×1017 atoms/cm3 and the maximum concentration is 50 times or less than that of a minimum concentration of the dopant element. Also provided is a monocrystalline silicon carbide wafer made by cutting and polishing the monocrystalline silicon carbide ingot, wherein a electric resistivity at room temperature of the wafer is 5×103 ?cm or more. Further provided is a method for manufacturing the monocrystalline silicon carbide including growing the monocrystalline silicon carbide on a seed crystal from a sublimation material by a sublimation method. The sublimation material includes a solid material containing a dopant element, and the specific surface of the solid material containing the dopant element is 0.5 m2/g or less.

Abstract: The present invention provides a high resistivity, high quality, large size SiC single crystal, SiC single crystal wafer, and method of production of the same, that is, a silicon carbide single crystal containing uncompensated impurities in an atomic number density of 1×1015/cm3 or more and containing vanadium in an amount less than said uncompensated impurity concentration, silicon carbide single crystal wafer obtained by processing and polishing the silicon carbide single crystal and having an electrical resistivity at room temperature of 5×103 ?cm or more, and a method of production of a silicon carbide single crystal.

Abstract: The present invention provides a high resistivity, high quality, large size SiC single crystal, SiC single crystal wafer, and method of production of the same, that is, a silicon carbide single crystal containing uncompensated impurities in an atomic number density of 1×1015/cm3 or more and containing vanadium in an amount less than said uncompensated impurity concentration, silicon carbide single crystal wafer obtained by processing and polishing the silicon carbide single crystal and having an electrical resistivity at room temperature of 5×103 ?cm or more, and a method of production of a silicon carbide single crystal.

Abstract: The present invention provides a semi-insulating silicon carbide single crystal characterized by having an electrical resistivity at room temperature of 1×105 ?cm or more, and a semi-insulating silicon carbide single crystal characterized by having an electrical resistivity at room temperature of 1×105 ?cm or more and vacancy pairs (bivacancies), and an semi-insulating silicon carbide single crystal characterized by having an electrical resistivity at room temperature of 1×105 ?cm or more and containing a crystal region where a position average lifetime becomes a lifetime longer than 155 ps in measurement of position lifetime at a liquid nitrogen boiling point temperature (77K) or less, and wafer obtained therefrom.

Abstract: Provided is a monocrystalline silicon carbide ingot containing a dopant element, wherein a maximum concentration of the dopant element is less than 5×1017 atoms/cm3 and the maximum concentration is 50 times or less than that of a minimum concentration of the dopant element. Also provided is a monocrystalline silicon carbide wafer made by cutting and polishing the monocrystalline silicon carbide ingot, wherein a electric resistivity at room temperature of the wafer is 5×103 ?cm or more. Further provided is a method for manufacturing the monocrystalline silicon carbide including growing the monocrystalline silicon carbide on a seed crystal from a sublimation material by a sublimation method. The sublimation material includes a solid material containing a dopant element, and the specific surface of the solid material containing the dopant element is 0.5 m2/g or less.