Patents by Inventor Mitsuru Sudou

Mitsuru Sudou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of removing defects of single crystal material and single crystal material from which defects are removed by the method
    Patent number: 6447600
    Abstract: A hot isostatic pressing treatment is conducted for a single crystal body (11) in an atmosphere where the single crystal body (11) is stable, under a pressure of 0.2 to 304 MPa at a temperature which is 0.85 or more times the melting point in an absolute temperature unit of the single crystal body (11), for 5 minutes to 20 hours; and the single crystal body (11) is annealed. It is preferable that the atmosphere where the single crystal body (11) is stable is an inert gas atmosphere or an atmosphere containing vapor of a high vapor pressure element, and it is more preferable that the HIP treatment is conducted under a pressure of 10 to 200 MPa. Further, the single crystal body (11) may be an ingot of a silicon single crystal, a GaAs single crystal, an InP single crystal, a ZnS single crystal or a ZnSe single crystal, or a block or wafer obtained by slicing the ingot.
    Type: Grant
    Filed: March 30, 2001
    Date of Patent: September 10, 2002
    Assignee: Mitsubishi Materials Silicon Corporation
    Inventors: Jun Furukawa, Mitsuru Sudou, Tetsuya Nakai, Takao Fujikawa, Takuya Masui