Abstract: A thin-film transistor according to an embodiment of the present invention includes: a gate electrode; an active layer formed of an oxide containing indium, zinc, and titanium; a gate insulating film formed between the gate electrode and the active layer; and a source electrode and a drain electrode that are electrically connected to the active layer. Atomic proportions of elements relative to the total quantity of indium, zinc, and titanium that constitute the oxide may be not less than 24 at. % and not more than 80 at. % for indium, not less than 16 at. % and not more than 70 at. % for zinc, and not less than 0.1 at. % and not more than 20 at. % for titanium.

Abstract: An oxide semiconductor thin film according to an embodiment of the present invention includes: an oxide semiconductor containing In, Zn, Ti, and Sn, an atomic ratio of (In+Sn)/(In+Zn+Ti+Sn) being not less than 0.36 and not more than 0.92, an atomic ratio of Sn/(In+Sn) being not less than 0.02 and not more than 0.46, an atomic ratio of Sn/(In+Zn+Ti+Sn) being not less than 0.01 and not more than 0.42, an atomic ratio of Ti/(In+Zn+Ti+Sn) being not less than 0.01 and not more than 0.10.

Abstract: An oxide-sintered-body sputtering target according to an embodiment of the present invention is formed of a sintered body containing an indium oxide, a zinc oxide, a titanium oxide, and a zirconium oxide, an atomic ratio of titanium with respect to a sum of indium, zinc, and titanium being not less than 0.1% and not more than 20%, a weight ratio of zirconium with respect to a sum of the indium oxide, the zinc oxide, the titanium oxide, and the zirconium oxide being not less than 10 ppm and not more than 2,000 ppm.

Abstract: A thin-film transistor according to an embodiment of the present invention includes: a gate electrode; an active layer formed of an oxide containing indium, zinc, and titanium; a gate insulating film formed between the gate electrode and the active layer; and a source electrode and a drain electrode that are electrically connected to the active layer. Atomic proportions of elements relative to the total quantity of indium, zinc, and titanium that constitute the oxide may be not less than 24 at. % and not more than 80 at. % for indium, not less than 16 at. % and not more than 70 at. % for zinc, and not less than 0.1 at. % and not more than 20 at. % for titanium.

Abstract: A fuel injection rate control apparatus for a V-engine, formed so that the rational speed of the engine can be prevented from varying when the engine is inclined forward or backward, even if a commonly mass-produced inexpensive governer is used. This control apparatus has a fuel injection pump (1) provided with a governer (2) and mounted on one side portion of a cylinder block, a governer-free fuel injection pump (1') mounted on the other side portion of the cylinder block, and a link mechanism consisting of a connecting shaft (4.sub.1) provided in front of the two fuel injection pumps so that the connecting shaft can be turned freely so as to transmit the movement of a rack rod (3) of the governer-carrying fuel injection pump (1) to a rack rod (3) of the other fuel injection pump (1'), a pair of levers (4.sub.2-1, 4.sub.2-2) fixed to both sides of the connecting shaft so as to project in the opposite directions, and a pair of links (4.sub.3) connecting these levers and two rack rods together.