Abstract: In a multi-chamber load-locking device which is placed between a loading station which places a wafer cassette which houses semiconductor wafers and a transfer chamber which conveys the semiconductor wafers and in which lock-loading device chamber space is divided into two by the vertical motion of a plate, a device which comprises: sealing means by which the chamber space is selectively divided into two by contacting the plate and a state of no airflow is caused; a cylindrical cam provided with the same axis as that of the chamber; and a rotary actuator dynamically connected with the cylindrical cam, wherein the turning moment of the rotary actuator is converted into the vertical thrust of the axis and the plate rises and descends.

Abstract: There is provided a load-lock device which allows high productivity and occupies a small space. There is provided a load-lock device which stands by with objects to be processed loaded thereon in order to cooperate with a transport mechanism in transporting the objects to be processed to processing chambers in order. The load-lock device according to the present invention comprises chamber means, wafer holding means for loading a plurality of the objects to be processed which is movable up and down in the chamber and flange means provided on a side of the wafer holding means which is engaged with a part of an inner wall of the chamber to divide the space inside the chamber into two isolated rooms. The transport mechanism is connected to a side of the chamber means substantially in the center thereof, and the flange means is coupled to the side of the wafer holding means substantially in the center thereof.

Abstract: In order to study an etching rate difference of a layer formed mainly with silicon dioxide on a wafer, a thermal oxide film (113) and layers of BSG (117), BPSG (125), and PSG (129) are laminated on a wafer and are etched in a gaseous etching atmosphere consisting essentially of hydrogen fluoride or a mixture of hydrogen fluoride and water vapor. The layers are etched with various etching rates which are higher than that of the thermal oxide film. The etching rate difference is a difference between the etching rate of each layer and an etching rate of the thermal oxide film. The layers may include impurities, such as boron and phosphorus, collectively as a part of a layer material of each layer. The etching rate difference depends on the layer material. Preferably, the gaseous etching atmosphere should have a reduced pressure. Alternatively, a water vapor partial pressure should not be greater than 2000 Pa. As a further alternative, either the layer or the gaseous etching atmosphere should be heated.

Abstract: In order to study an etching rate difference of a layer formed mainly with silicon dioxide on a wafer, a thermal oxide film (113) and layers of BSG (117), BPSG (125), and PSG (129) are laminated on a wafer and are etched in a gaseous etching atmosphere consisting essentially of hydrogen fluoride or a mixture of hydrogen fluoride and water vapor. The layers are etched with various etching rates which are higher than that of the thermal oxide film. The etching rate difference is a difference between the etching rate of each layer and an etching rate of the thermal oxide film. The layers may include impurities, such as boron and phosphorus, collectively as a part of a layer material of each layer. The etching rate difference depends on the layer material. Preferably, the gaseous etching atmosphere should have a reduced pressure. Alternatively, a water vapor partial pressure should not be greater than 2000 Pa. As a further alternative, either the layer or the gaseous etching atmosphere should be heated.

Abstract: The present invention is a load lock chamber for a vertical type heat treatment apparatus which has no elevating device which requires the provision of lubricating oil which is a source of particles causing contamination in the chamber. Below a treatment chamber, an intermediate chamber is arranged. A support stand is provided below a boat table for supporting the objects to be processed, which can be loaded into or unloaded from the treatment chamber gastightly through the intermediate chamber. This support stand is mounted on a member movable vertically by means of a feed screw. A bellows is mounted between the intermediate chamber and the movable member.

Abstract: A reduction in the air tightness of a reaction chamber of an apparatus due to thermal degradation of a vacuum seal at the connection seal between the reaction chamber and a manifold is prevented. Contamination of the inside of the chamber from particles produced from heating members of the apparatus is reduced. The wall of the reaction chamber extends to a location sufficiently spaced from the lower end of the heater surrounding the reaction chamber. An exhaust port is provided in the wall to exhaust the reaction chamber.

Abstract: A thermal treatment apparatus for semiconductor materials is configured to prevent a metal contamination caused by a metal manifold and maintain a sufficient sealing and isolation effect between a transfer system containing chamber and a reaction chamber even when there exists a significant difference in pressure between the two chambers. A vent (7) having an inner diameter of 50 millimeters or greater for evacuating an inner section of a reaction chamber (1) made by quartz is provided in the reaction chamber (1). A seal flange is a double structure of a quartz flange (9) and a metal flange (10), and the metal flange is not emerged in the reaction chamber while the reaction chamber is sealed. Additionally, after the seal flange has been moved at a sealing position, a mobile section (12) is further moved such that the seal flange can not be pushed away by a pressure in the reaction chamber.

Abstract: In an electron beam apparatus such as a transmission electron microscope, a specimen holder device which comprises a specimen holder member and a holding rod connected thereto is withdrawably inserted in a pole-gap defined between upper and lower poles of an objective lens of the electron beam apparatus. An opening having a greater diameter than that of the pole end face is formed in the specimen holding member at a center portion for receiving therein a specimen mesh of a reduced thickness. A recess is formed in the specimen holding member at that portion which is caused to pass between the upper and lower magnetic poles upon insertion and withdrawal of the specimen to and from the interpole gap so that a region resulting from the formation of the recess has a reduced thickness as compared with the remaining region of the specimen holder member. Inter-pole gap of the objective lens is thus reduced to increase resolving power thereof.