Patents by Inventor Mitsutaka Hano

Mitsutaka Hano has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device
    Publication number: 20030218186
    Abstract: A bootstrap circuit includes at least a chargeable semiconductor element region (D3, 6) and a drift region (Rn, 8) of a high-tension island, and junction between the chargeable semiconductor element region and the high-tension island drift region is isolated, and the high-tension island drift region has n+ layers (11, 12) provided at a high-tension side and at an opening portion in an n− semiconductor layer (106) of a high-tension island, and thus an ON operation of a parasitic transistor can be prevented to thereby reduce a current consumption of the circuits.
    Type: Application
    Filed: April 30, 2003
    Publication date: November 27, 2003
    Applicant: MITSUBISHI DENKI KABUSHIKI
    Inventor: Mitsutaka Hano