Abstract: A technology which can realize a high-performance multiband operation in a compact circuit configuration and is advantageous for a wireless terminal of GSM system for which the further increase of the demands is expected in the future is provided. Provided is a multiband switch type antenna duplexer adopted in a mobile phone used in TDMA system such as the GSM system, in which the signals of respectively different first to fourth frequency bands (GSM 850, EGSM, DCS, PCS) share a single antenna, wherein switching elements such as receive filters and diodes are combined in various ways to perform the high-performance band switch with the minimum number of switching elements. The circuit of this antenna duplexer can realize not only the size reduction of the multiband switch antenna duplexer but also the size reduction and performance improvement of the wireless terminal itself.

Abstract: A piezoelectric thin film resonator is formed on a base substrate such as made of Si in which the resonance frequency is substantially determined by the lateral size not by the thickness of the resonator, whereby a resonator for use in TCXO, etc. is provided by the thin film technique, which enables to reduce the thickness of the film and the size of the resonator and integration with Si-based IC incorporating the resonator in one identical substrate.

Abstract: A compact, inexpensive antenna sharing device meeting requirements in terms of transmitter distortion characteristic and ESD characteristic is provided which separates and combines signals transmitted and received in first to third signal bands and which thereby enables an antenna terminal to be shared as a common terminal. It includes a diplexer realizing an attenuation characteristic for protection against ESD, a compound semiconductor switch with an IIP3 of 66 dBm or more, and an inexpensive PIN diode switch.

Abstract: A technology which can realize a high-performance multiband operation in a compact circuit configuration and is advantageous for a wireless terminal of GSM system for which the further increase of the demands is expected in the future is provided. Provided is a multiband switch type antenna duplexer adopted in a mobile phone used in TDMA system such as the GSM system, in which the signals of respectively different first to fourth frequency bands (GSM 850, EGSM, DCS, PCS) share a single antenna, wherein switching elements such as receive filters and diodes are combined in various ways to perform the high-performance band switch with the minimum number of switching elements. The circuit of this antenna duplexer can realize not only the size reduction of the multiband switch antenna duplexer but also the size reduction and performance improvement of the wireless terminal itself.

Abstract: The present invention provides a film bulk acoustic wave resonator (FBAR) filter that can keep the Q factor high. The FBAR filter comprises a first FBAR with a first resonant frequency and a second FBAR with a second resonant frequency, formed on a same substrate. The FBAR filter has such a structure that a first underlayer is formed between the substrate and a first bottom electrode layer and a second underlayer is formed between the substrate and a second bottom electrode layer, the first underlayer thickness being different from the second underlayer thickness.

Abstract: A resonator is connected in parallel to at least one serial-arm-connected resonator in a resonator type filter having a serial arm and a parallel arm. At this time, the resonance frequency of the resonator connected in parallel is set to be substantially the same as the resonance frequency of the parallel-arm-connected resonator. This makes it possible to prevent the deterioration of attenuation levels at the lower-frequency side of the filter, caused by an increase in the resistance of a connection element due to an increase in packaging density.

Abstract: A bulk acoustic wave resonator in which the problem of the technology for forming the diaphragm structure is resolved, which is more compact and improved the frequency accuracy, and the manufacturing method thereof, a filter using the same, a semiconductor integrated circuit device using the same, and a high frequency module using the same are provided. The bulk acoustic wave resonator according to the present invention comprises a substrate having a first surface and a second surface opposite to the first surface, and a staked resonator including a first electrode film in contact with the first surface, a piezoelectric film overlaying the first electrode film and a second electrode film overlaying the piezoelectric film.

Abstract: The present invention provides a film bulk acoustic wave resonator (FBAR) filter that can keep the Q factor high. The FBAR filter comprises a first FBAR with a first resonant frequency and a second FBAR with a second resonant frequency, formed on a same substrate. The FBAR filter has such a structure that a first underlayer is formed between the substrate and a first bottom electrode layer and a second underlayer is formed between the substrate and a second bottom electrode layer, the first underlayer thickness being different from the second underlayer thickness.

Abstract: A resonator is connected in parallel to at least one serial-arm-connected resonator in a resonator type filter having a serial arm and a parallel arm. At this time, the resonance frequency of the resonator connected in parallel is set to be substantially the same as the resonance frequency of the parallel-arm-connected resonator. This makes it possible to prevent the deterioration of attenuation levels at the lower-frequency side of the filter, caused by an increase in the resistance of a connection element due to an increase in packaging density.

Abstract: A technology which can realize a high-performance multiband operation in a compact circuit configuration and is advantageous for a wireless terminal of GSM system for which the further increase of the demands is expected in the future is provided. Provided is a multiband switch type antenna duplexer adopted in a mobile phone used in TDMA system such as the GSM system, in which the signals of respectively different first to fourth frequency bands (GSM 850, EGSM, DCS, PCS) share a single antenna, wherein switching elements such as receive filters and diodes are combined in various ways to perform the high-performance band switch with the minimum number of switching elements. The circuit of this antenna duplexer can realize not only the size reduction of the multiband switch antenna duplexer but also the size reduction and performance improvement of the wireless terminal itself.

Abstract: A piezoelectric thin film resonator is formed on a base substrate such as made of Si in which the resonance frequency is substantially determined by the lateral size not by the thickness of the resonator, whereby a resonator for use in TCXO, etc. is provided by the thin film technique, which enables to reduce the thickness of the film and the size of the resonator and integration with Si-based IC incorporating the resonator in one identical substrate.

Abstract: A compact, inexpensive antenna sharing device meeting requirements in terms of transmitter distortion characteristic and ESD characteristic is provided which separates and combines signals transmitted and received in first to third signal bands and which thereby enables an antenna terminal to be shared as a common terminal. It includes a diplexer realizing an attenuation characteristic for protection against ESD, a compound semiconductor switch with an IIP3 of 66 dBm or more, and an inexpensive PIN diode switch.

Abstract: A bulk acoustic wave resonator in which the problem of the technology for forming the diaphragm structure is resolved, which is more compact and improved the frequency accuracy, and the manufacturing method thereof, a filter using the same, a semiconductor integrated circuit device using the same, and a high frequency module using the same are provided. The bulk acoustic wave resonator according to the present invention comprises a substrate having a first surface and a second surface opposite to the first surface, and a staked resonator including a first electrode film in contact with the first surface, a piezoelectric film overlaying the first electrode film and a second electrode film overlaying the piezoelectric film.

Abstract: The present invention provides a film bulk acoustic wave resonator (FBAR) filter that can keep the Q factor high. The FBAR filter comprises a first FBAR with a first resonant frequency and a second FBAR with a second resonant frequency, formed on a same substrate. The FBAR filter has such a structure that a first underlayer is formed between the substrate and a first bottom electrode layer and a second underlayer is formed between the substrate and a second bottom electrode layer, the first underlayer thickness being different from the second underlayer thickness.

Abstract: An antenna duplexer is reduced in size, so that a dual-band/triple-band mobile radio terminal small in size and light in weight is realized. An off-set PLL modulation system is adopted, and a transmitting system of the antenna duplexer is constituted by switches. Further, in mounting an SAW filter, a multi-layer substrate is adopted, matching circuits and so on are formed by lumped-constant circuit elements, and the SAW filter is received in a space provided on the multi-layer substrate.

Abstract: A radio frequency filter that can be miniaturized is provided. The radio frequency filter has a ladder-type resonator filter, a first terminal, a second terminal, a serial capacitance, a parallel capacitance, a serial inductance, and a parallel inductance. In the ladder-type resonator filter, a plurality of first surface acoustic wave resonators or first film bulk acoustic resonators are connected in a ladder circuit configuration. The serial inductance and the parallel capacitance are connected between the ladder-type resonator filter and the first terminal. The serial capacitance and the parallel inductance are connected between the ladder-type resonator filter and the second terminal.

Abstract: A surface acoustic wave antenna duplexer constituted by a transmitter-line filter, a receiver-line filter and an antenna terminal, the transmitter-line filter and the receiver-line filter being connected in parallel with the antenna terminal as a common terminal; wherein at least one of the transmitter-line and receiver-line filters includes a top filter using the whole of a transmitter band or a receiver band as its pass band, a surface acoustic wave resonator filter, and a transmitter or receiver terminal, the top filter, the surface acoustic wave resonator filter and the transmitter or receiver terminal being disposed in this order viewed from the antenna terminal, the surface acoustic wave resonator filter including at least one additive capacitance or inductance; and wherein a switching element is provided for varying a value of the capacitance or inductance so as to provide a function for varying a pass band frequency or an attenuation band frequency of the surface acoustic wave resonator filter.

Abstract: A radio frequency filter that can be miniaturized is provided. The radio frequency filter has a ladder-type resonator filter, a first terminal, a second terminal, a serial capacitance, a parallel capacitance, a serial inductance, and a parallel inductance. In the ladder-type resonator filter, a plurality of first surface acoustic wave resonators or first film bulk acoustic resonators are connected in a ladder circuit configuration. The serial inductance and the parallel capacitance are connected between the ladder-type resonator filter and the first terminal. The serial capacitance and the parallel inductance are connected between the ladder-type resonator filter and the second terminal.

Abstract: A surface acoustic wave device which includes a piezoelectric substrate, and an interdigital transducer formed on a planar surface of the piezoelectric substrate, and having first and second bus bars, a first plurality of electrode fingers connected to the first bus bar, and a second plurality of electrode fingers connected to the second bus bar. The first and second plurality of electrode fingers of the interdigital transducer have an electrode cross region in which the first and second plurality of electrode fingers are arranged alternatively. Each boundary between the first and second bus bars and a grating region of the first and second plurality of electrode fingers is arranged such that the boundary is not substantially parallel, with a transmission direction of surface acoustic waves excited by the interdigital transducer.

Abstract: A surface acoustic wave signal processing apparatus for processing first and second high-frequency signals having frequencies f.sub.1 and f.sub.2 respectively, which comprises: first and second surface acoustic wave delay elements for receiving the first and second high-frequency signals respectively and independently of each other, the delay elements being formed as surface acoustic wave excitation and reception transducers on a piezoelectric substrate so that a phase delay .phi..sub.1 with respect to the frequency f.sub.1 is substantially equal to a phase delay .phi..sub.2 with respect to the frequency f.sub.2 (that is, .phi..sub.1 .apprxeq..phi..sub.2); and a mixer for mixing first and second high-frequency output signals of the first and second surface acoustic wave delay elements so that a signal having a frequency .vertline.f.sub.1 -f.sub.2 .vertline. which is a difference between the two frequencies f.sub.1 and f.sub.2 is taken out as an output signal of the mixer.