Patents by Inventor Mitsutera Iijima

Mitsutera Iijima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and its manufacturing method
    Patent number: 7476582
    Abstract: A non-volatile semiconductor memory device which simultaneously possesses a non-volatile memory cell region which possesses an isolating insulation film which has been formed selectively within a semiconductor substrate, which also possesses a first electroconductive film (floating gate electrode) via a first gate insulating film which has been formed on the semiconductor substrate surface, and which also possesses a metal film (control gate electrode) via a second gate insulating film which has been formed above said electroconductive film and a peripheral transistor region which possesses a metal film (gate electrode) via a third gate insulating film which has been formed above the semiconductor substrate surface.
    Type: Grant
    Filed: November 21, 2006
    Date of Patent: January 13, 2009
    Assignee: Fujitsu Limited
    Inventors: Shin-ichi Nakagawa, Mitsutera Iijima