Abstract: Thermal infrared sensors are disclosed for the detection of an incident infrared flux. The sensors include an absorber each including an absorption layer and a thermal sensing element. The incident infrared flux is absorbed by the absorption layer. Heat generated by the absorption is detected by the thermal sensing element such as a thermistor. The absorber is supported above a substrate by supports and bridges, reducing heat transfer from the absorber to the substrate. The supports and bridges include electrical connections to the absorber and the substrate. The supports and bridges are located beneath the absorber so that a large proportion of the area of the absorber is available to absorb the incident flux. Imaging devices including arrays of such sensors and fabrication methods for the sensors and imaging devices are also disclosed.

Abstract: A humidity sensor of a heat conduction type which enables a humidity measurement to be produced by a single temperature sensing resistor so as to reduce a change in characteristic depending on a temperature change of the measurement atmosphere and to reduce the cost, comprises a temperature sensing resistor 1 and three fixed resistors R.sub.1, R.sub.2 and R.sub.3 which form a Wheatstone bridge circuit. The humidity is measured by utilizing the fact that the heat dissipation of the temperature sensing resistor 1 changes depending on the humidity. The temperature sensing resistor 1 is heated by a heat generator 2 for self-radiation of Joule heat so that the temperature of the temperature sensing resistor 1 is controlled to be at a constant temperature of 150.degree. C. or more. The output voltage value of the Wheatstone bridge circuit is corrected with reference to the variation of the output voltage value depending on the ambient temperature of the temperature sensing resistor 1.

Abstract: A piezo-electricity generation device without an external power supply unit includes a rectifying means which rectifies an AC voltage generated by the vibration of at least one piezo-electric plate. An accumulating means accumulates an electric charge outputted through the rectifying means. A voltage setting means provides a prespecified voltage. A transmission means transmits substantially all of the electric charge accumulated in the accumulating means to a signal output means when the output voltage of the accumulating means exceeds the prespecified voltage set by the voltage setting means. A timing setting means may also or alternatively be provided for setting a prespecified timing such that the transmission means transmits substantially all of the electric charge stored in the accumulating means at the prespecified timing set by said timing setting means.

Abstract: A flow sensor eliminates turbulence of fluid flow due to a structure of the temperature detecting portion so that a temperature of the temperature detecting portions does not fluctuate due to the turbulence of the fluid. The flow sensor is formed on a substrate. Each of a first temperature detecting portion and a second temperature detecting portion has a heating function and a temperature detecting function, and are arranged along a direction of flow of the fluid. A supporting portion is formed on the substrate for supporting the first and second temperature detecting portions thereon. The supporting portion does not have a side surface facing substantially in the direction of flow of the fluid. A side surface of the supporting portion is protected by a guard portion formed along the side surface.

Abstract: An infrared radiation sensor of high accuracy is provided which is suitable for a thermometer to be used for effecting noncontacting determination of a temperature of a subject under test, particularly a temperature of a tympanic membrane, by utilizing the temperature characteristics of the saturated current flowing in the reverse direction through a Schottky junction diode.

Abstract: The present invention is to provide a compact and high speed tunnel transistor having a high input impedance, yet consuming only a small quantity of power. In a tunnel transistor according to the present invention, a gate electrode is provided via an insulating thin film on a Schottky junction which is a junction between a semiconductor and a metallic layer, a p-n.sup.+ junction between semiconductors, or an n-p.sup.+ junction between semiconductors so that an accumulation layer having a high carrier density is formed bear the surface of a semiconductor by adjusting a gate voltage Vg and thus a tunnel junction is formed between this accumulation layer and a metallic layer or a semiconductor having a high carrier density (n.sup.+ or p.sup.+) by adjusting the gate voltage Vg.

Abstract: In the sensor including a frame member provided with a central opening portion, a pair of beam members extending from adjacent corner portions of the frame member toward a center of the opening portion, and the beam members have vibrating-end portions, i.e., inner end portions, connected with each other through a weight portion. Each of the beam members is provided with a concave portion in cross section. A piezo-resistance device is formed on each of the beam members, respectively. The beam members are improved in mechanical strength without a corresponding increase in a thickness of each of the beam members, while the piezo-resistance devices formed on the beam members are improved in sensitivity to vibrations.

Abstract: The disclosed infrared sensor comprises a substrate provided with a bridging part and a sensing part made of an infrared temperature-sensitive film formed on the bridging part. A first lid member covers the sensing part and bridging part and a second lid member covers the reverse surface of the substrate and tightly seals a cavity formed between the substrate and the bridging part. The invention preferably comprises an electrode pad electrically connected to the infrared temperature sensitive film and formed of a laminate film including an etchant-resistant electrically conductive film. The invention provides an infrared sensor with a small stable bridging structure which allows easy formation of a contact hole on an electrode pad without causing a breakage of the bridging part. A method for the production of an infrared sensor is also disclosed.

Abstract: In the micro vacuum device according to the present invention, an electron emitter is formed into a thin film form on a thin film heater rising in midair by means of air bridge, or a thin film heater is formed as an electron emitter, and the electron emitter is provided adjacent to a gate with a space therebetween so that field emission of electrons is easily effected, or the electron emitter is heated so that thermoelectrons are easily emitted.

Abstract: A flow sensor is disclosed, which has a thin film heater which is formed atop a cavity formed in the substrate, and the thin film heater is formed on its upstream and downstream sides with slits for separating it and temperature sensors from the substrate. The slits have such a small width that a laminar flow of gas can be maintained. In the case where the film heater has a positive resistance temperature coefficient, the thin film heater is disposed such that current flows in a direction of the gas stream, in case when the film heater has a negative temperature coefficient, the thin film heater is disposed such that current flows in a direction perpendicular to the gas stream.

Abstract: An infrared sensor including a substrate provided with a bridging part; a detecting part composed of an infrared temperature-sensitive film formed in the bridging part; an electrode pad formed of a laminate film and an etchant-resistant electrically conductive film electrically connected to the infrared temperature-sensitive film; a first lid covering the detecting part and the bridging part; and a second lid covering another surface of the substrate and tightly closing a cavity formed between the substrate and the bridging part.

Abstract: The present invention comprises a first process to enclose a floating single crystal thin film with a enclosure material which is hardly affected by an isotropic etchant using a face with the lowest etch rate against an anisotropic etchant as a front surface of a single crystal substrate, a second process to cover a portion of or the entire surface of the single crystal substrate with a cover material which is hardly etched by the anisotropic etchant nor by the isotropic etchant, a third process to form an etched groove by etching and removing a portion of the single crystal substrate in the outer side or under a region enclosed by the enclosure material using the isotropic etchant, and a fourth process to deposit a floating single crystal thin film by etching and removing a portion of the single crystal thin film using the anisotropic etchant and making use of the etched groove.

Abstract: A photoelectric transducer advantageously usable as an electrical energy source for driving units of work modules and sensors of a micromachine is provided. This photoelectric transducer is characterized by having a photoelectric transducing element, a self-exciting oscillating circuit, and voltage transformer and optionally further a storage mechanism formed on one substrate. It is further characterized by producing electrical power by the exposure of the photoelectric transducing element to a continuous light.

Abstract: A gas detector of the type using an electric heater in which a substrate consists of an upper film of electrically insulating substance having a resistance to heat and a lower film of substance different from the substance of the upper film, a recess is formed below or under the upper film by removing part of the lower film, and a film of electrically conductive substance is deposited over the bridge of the upper film across the recess in the lower film, thereby providing a heating element characterized in that said heating element consists of a film of a substance having catalytic effects in the presence of a gas to be detected deposited on said electrically conductive substance or a material responsive to a gas to be detected, or consists of said electrically conductive substance having catalytic effects in the presence of a gas to be detected or a substance containing said substance having catalytic effects in the presence of a gas to be detected or a substance responsive to a gas to be detected, and said