Abstract: An electromagnetic wave supply mechanism for supplying an electromagnetic wave into a processing container serving as a load, includes a first branch circuit provided downstream of a radio-frequency power source for generating the electromagnetic wave. The first branch circuit includes a first waveguide having an input end, a plurality of second waveguides having respective output ends, and a branch point at which the first waveguide is branched into the second waveguides corresponding to n branches. Each output end is connected to the load or an input end of a second branch circuit subsequent to the first branch circuit. In the first branch circuit, when a total number of the output ends seen from the branch point is n, lengths of the second waveguides from the branch point to the n output ends differ from each other by m×?/2+(?/2)/n.

Abstract: Measuring a plasma state using a probe device in the case of performing plasma processing on a substrate by introducing process gas into a processing container accommodating the substrate and by producing pulsed plasma using an electromagnetic wave pulse obtained by processing an electromagnetic wave generated from an electromagnetic wave oscillator using a pulsing device. An AC voltage to the pulsed plasma is applied via the probe device; transmitting a signal from the pulsed plasma based on the AC voltage via the probe device and measuring data including a current value; and obtaining a state of the pulsed plasma by analyzing the measured data. The frequency of the AC voltage deviates from a frequency of the electromagnetic wave pulse so that the number of data required for the measurement of the pulsed plasma within one cycle of the electromagnetic wave pulse is obtained within allowable time.

Abstract: Provided is a plasma measuring method for measuring a plasma state using a probe device disposed at a plasma processing apparatus and a measuring circuit including a signal transmitter that outputs an AC voltage, the method comprising: measuring a first current in the measuring circuit when the AC voltage is outputted from the signal transmitter to the probe device in a state where plasma is not generated in the plasma processing apparatus and a second current in a state where plasma is generated in the plasma processing apparatus; measuring a phase difference between a current flowing through the plasma and the AC voltage by vector calculation using the measured first and second currents; and adjusting the AC voltage such that a voltage applied to the plasma becomes constant based on the phase difference and measuring a plasma state based on the measured current flowing through the plasma.

Abstract: Provided is a plasma measurement method for measuring a plasma state using a probe device that is provided in a plasma processing apparatus, and a measurement circuit including a signal transmitter that outputs an AC voltage, the method comprising: measuring a first current including a magnitude and phase of current in the measurement circuit when the AC voltage is output from the signal transmitter to the probe device, in a state where no plasma is generated in the plasma processing apparatus; measuring a second current including a magnitude and phase of current in the measurement circuit when the AC voltage is output from the signal transmitter to the probe device, in a state where plasma is generated in the plasma processing apparatus; and measuring current flowing through the plasma by vector operation using the magnitude and phase of the current included in the measured first current and second current.

Abstract: There is provided a plasma processing apparatus comprising: a processing container configured such that a substrate is subjected to plasma processing; a dielectric top plate which is quadrangular and which is provided to close an upper opening of the processing container; and a conductor plate supporting the dielectric top plate and having four electromagnetic wave emitting ports for emitting electromagnetic waves to the dielectric top plate. Each of the four electromagnetic wave emitting ports has a rectangular shape having long side and short side, the electromagnetic wave emitting ports are arranged such that the long side of each of the four electromagnetic wave emitting ports are parallel to the closest side among four sides of the dielectric top plate forming the quadrangular shape, and the long sides of the two electromagnetic wave emitting ports oriented in a same direction do not overlap each other in the same direction.

Abstract: A plasma processing method includes: supplying a gas into a processing container; and intermittently supplying microwave powers output from a plurality of microwave introducing modules into the processing container. In the intermittently supplying the microwave powers, the supply of all the microwave powers from the plurality of microwave introducing modules is periodically in an OFF state for a given time.

Abstract: Measuring a plasma state using a probe device in the case of performing plasma processing on a substrate by introducing process gas into a processing container accommodating the substrate and by producing pulsed plasma using an electromagnetic wave pulse obtained by processing an electromagnetic wave generated from an electromagnetic wave oscillator using a pulsing device. An AC voltage to the pulsed plasma is applied via the probe device; transmitting a signal from the pulsed plasma based on the AC voltage via the probe device and measuring data including a current value; and obtaining a state of the pulsed plasma by analyzing the measured data. The frequency of the AC voltage deviates from a frequency of the electromagnetic wave pulse so that the number of data required for the measurement of the pulsed plasma within one cycle of the electromagnetic wave pulse is obtained within allowable time.

Abstract: A directional coupler includes: a hollow coaxial line including a central conductor forming a main line and an outer conductor surrounding the central conductor and having an opening formed therein; a dielectric substrate covering the opening and provided with film-shaped ground conductors, wherein a film-shaped ground conductor covers a rear surface of the dielectric substrate facing the central conductor via the opening and a film-shaped ground conductor covers a front surface of the dielectric substrate, respectively, and are grounded; and a coupling line provided on the rear surface of the dielectric substrate in a region surrounded by the ground conductor formed on the rear surface and serving as an auxiliary line, wherein the ground conductor formed on the front surface is provided with a conductor-removed portion in which a portion of a conductor film in a region facing the coupling line via the dielectric substrate is removed.

Abstract: A device includes an amplifier for amplifying and supplying a high frequency power supplied to a load, a parameter detector for detecting a parameter of a current, a voltage, or a power from the amplifier to the load, a current supply unit for supplying a driving current for the amplifier, and an output unit for outputting a command signal for changing an amplification degree of the amplifier based on the detected parameter such that the parameter becomes a target value. The device further includes a first abnormality detector for detecting an abnormality by monitoring the command signal, and/or a current detector for detecting the driving current, a current data storage unit storing an upper and a lower limit value of the driving current, and a second abnormality detector for detecting the abnormality based on at least one of the upper limit value or the lower limit value.

Abstract: A directional coupler includes: a hollow coaxial line including a central conductor forming a main line and an outer conductor surrounding the central conductor and having an opening formed therein; a dielectric substrate covering the opening and provided with film-shaped ground conductors, wherein a film-shaped ground conductor covers a rear surface of the dielectric substrate facing the central conductor via the opening and a film-shaped ground conductor covers a front surface of the dielectric substrate, respectively, and are grounded; and a coupling line provided on the rear surface of the dielectric substrate in a region surrounded by the ground conductor formed on the rear surface and serving as an auxiliary line, wherein the ground conductor formed on the front surface is provided with a conductor-removed portion in which a portion of a conductor film in a region facing the coupling line via the dielectric substrate is removed.

Abstract: A plasma processing method includes: supplying a gas into a processing container; and intermittently supplying microwave powers output from a plurality of microwave introducing modules into the processing container. In the intermittently supplying the microwave powers, the supply of all the microwave powers from the plurality of microwave introducing modules is periodically in an OFF state for a given time.

Abstract: In a high frequency generator, a high frequency generated by an IQ modulation of a vector multiplier and a amplification of an amplifier is outputted through an output unit. An directional coupler outputs a first high frequency including a part of traveling waves and a second high frequency including a part of reflected waves. A control units obtains an estimated value of each of an in-phase component and an orthogonal component of the traveling waves in the output unit, and an in-phase component and an orthogonal component of the reflected waves in the output unit by performing a first matrix operation that is an operation of four polynomials, each including as multi-variables an in-phase component and an orthogonal component of a first high frequency and an in-phase component and an orthogonal component of the second high frequency.

Abstract: A device includes an amplifier for amplifying and supplying a high frequency power supplied to a load, a parameter detector for detecting a parameter of a current, a voltage, or a power from the amplifier to the load, a current supply unit for supplying a driving current for the amplifier, and an output unit for outputting a command signal for changing an amplification degree of the amplifier based on the detected parameter such that the parameter becomes a target value. The device further includes a first abnormality detector for detecting an abnormality by monitoring the command signal, and/or a current detector for detecting the driving current, a current data storage unit storing an upper and a lower limit value of the driving current, and a second abnormality detector for detecting the abnormality based on at least one of the upper limit value or the lower limit value.

Abstract: In a high frequency generator, a high frequency generated by an IQ modulation of a vector multiplier and a amplification of an amplifier is outputted through an output unit. An directional coupler outputs a first high frequency including a part of traveling waves and a second high frequency including a part of reflected waves. A control units obtains an estimated value of each of an in-phase component and an orthogonal component of the traveling waves in the output unit, and an in-phase component and an orthogonal component of the reflected waves in the output unit by performing a first matrix operation that is an operation of four polynomials, each including as multi-variables an in-phase component and an orthogonal component of a first high frequency and an in-phase component and an orthogonal component of the second high frequency.

Abstract: In an automatic matching unit, a controller includes a first and a second matching algorithm. The operating point Zp is moved stepwise toward the matching point Zs with a relatively large pitch by using the first matching algorithm. Further, when the operating point Zp is within the outer proximity range, the operating point Zp is moved stepwise toward the matching point Zs with a relatively small pitch by using the second matching algorithm. In the second matching algorithm, the operating point Zp is moved close to the third reference line TC1S or TC2S perpendicular to the first or second reference line C1S or C2S along, e.g., the route Zp(7)?Zp(8)?Zp(9) on the impedance coordinates. The coordinates of the operating point Zp(9) reaches an available quasi-matching point ZB extremely close to the origin O (the matching point Zs).

Abstract: A microwave processing apparatus includes: a processing chamber; a microwave introducing unit for generating microwaves and introducing the microwaves into the chamber; and a control unit for controlling the microwave introducing unit. The microwave introducing unit has microwave sources for generating the microwaves and transmission lines for transmitting the microwaves into the chamber and introduces parts of the microwaves into the chamber simultaneously, and the control unit switches a first state of introducing said parts of the microwaves into the chamber to a second state of generating a microwave by one of the microwave sources and introducing into the chamber.

Abstract: There is provided a microwave irradiation apparatus capable of independently controlling a temperature of a target object while irradiating microwave to the target object. The microwave irradiation apparatus 2 includes a processing chamber 4 configured to be vacuum-evacuated; a supporting table 6 configured to support the target object; a processing gas introduction unit 106 configured to introduce a processing gas into the processing chamber; a microwave introduction unit 72 configured to introduce the microwave into the processing chamber; a heating unit 16 configured to heat the target object; a gas cooling unit 104 configured to cool the target object by a cooling gas; a radiation thermometer 64 configured to measure a temperature of the target object; and a temperature control unit 70 configured to adjust the temperature of the target object by controlling the heating unit and the gas cooling unit based on the temperature measured by the radiation thermometer.

Abstract: A microwave heating apparatus includes: a processing chamber including a ceiling wall and a bottom wall and accommodating a target object; a microwave introducing unit to generate a microwave for heating the target object; a holding unit to hold the target object; and a control unit to control the microwave introducing unit to heat the target object. During heating the target object, the holding unit holds the target object at a position in which a distance H1 from the top surface of the bottom wall to the bottom surface of the target object satisfies a condition of H1<?/2, and a distance H2 from the bottom surface of the ceiling wall to the top surface of the target object satisfies a condition of 3?/4?H2<?, ? being a microwave wavelength.

Abstract: A matching method and a microwave heating method in a microwave heating apparatus for heating a substrate by introducing a microwave into a processing chamber comprises an initial matching step of performing a matching so that a reflection power to a microwave introducing unit is minimized in a state where the substrate is maintained at a first height position by a supporting member. And a second height position determination step of introducing the microwave into the processing chamber by the microwave introducing unit and determining a second height position of the substrate based on at least a temperature of the substrate while adjusting a height of the substrate by the supporting member.

Abstract: A controller 90 of an automatic matching unit includes a first and a second matching control unit 100, 102 for respectively variably controlling the electrostatic capacitances of a first and a second variable capacitors 80, 82 through a first and a second stepping motor 86, 88 such that a measured absolute value ZMm and a measured phase Z?m of a load impedance obtained by an impedance measuring unit 84 become close to a predetermined reference absolute value ZMs and a predetermined reference phase Z?s, respectively; and a gain control unit 112. The gain control unit 112 variably controls a proportional gain of at least one of the first and the second matching unit based on current electrostatic capacitances NC1 and NC2 of the first and the second variable capacitors 80, 82 obtained by a first and a second electrostatic capacitance monitoring unit 108, 110, respectively.