Patents by Inventor Mitsuya Ohashi
Mitsuya Ohashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220153606Abstract: A tungsten hexafluoride manufacturing method of the present invention includes a reaction step of reacting tungsten containing arsenic or an arsenic compound with a gas of a fluorine element-containing compound so as to obtain a mixture containing tungsten hexafluoride and a trivalent arsenic compound, and a distillation step of distilling and purifying the mixture so as to separate and remove a fraction containing the trivalent arsenic compound and to obtain tungsten hexafluoride.Type: ApplicationFiled: March 19, 2020Publication date: May 19, 2022Applicant: CENTRAL GLASS COMPANY, LIMITEDInventors: Mitsuya OHASHI, Takanori HAMANA, Takanori OGATA, Ryuichi NAKAMURA
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Patent number: 9343774Abstract: Disclosed is a method for forming lithium hexafluorophosphate by reacting together phosphorus trichloride, chlorine and lithium chloride in a nonaqueous organic solvent and then making the reaction product formed in the solvent react with hydrogen fluoride. This method is characterized by that a lithium hexafluorophosphate concentrated liquid is obtained by conducting a filtration after making the reaction product formed in the solvent react with hydrogen fluoride and then subjecting the filtrate to a concentration by degassing. By this method, it is possible to easily produce a high-purity, lithium hexafluorophosphate concentrated liquid at a low cost.Type: GrantFiled: August 15, 2011Date of Patent: May 17, 2016Assignee: Central Glass Company, LimitedInventors: Meguru Oe, Keiji Sato, Mitsuya Ohashi, Toshinori Mitsui
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Publication number: 20130143112Abstract: Disclosed is a method for forming lithium hexafluorophosphate by reacting together phosphorus trichloride, chlorine and lithium chloride in a nonaqueous organic solvent and then making the reaction product formed in the solvent react with hydrogen fluoride. This method is characterized by that a lithium hexafluorophosphate concentrated liquid is obtained by conducting a filtration after making the reaction product formed in the solvent react with hydrogen fluoride and then subjecting the filtrate to a concentration by degassing. By this method, it is possible to easily produce a high-purity, lithium hexafluorophosphate concentrated liquid at a low cost.Type: ApplicationFiled: August 15, 2011Publication date: June 6, 2013Applicant: Central Glass Company, LimitedInventors: Meguru Oe, Keiji Sato, Mitsuya Ohashi, Toshinori Mitsui
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Patent number: 7973390Abstract: A modifier for lowering relative dielectric constant of a low dielectric constant film used in semiconductor devices, the modifier of the low dielectric constant film being characterized in that it contains as an effective component a silicon compound represented by formula (1) R3-nHnSiN3??(1) in which R is a C1-C4 alkyl group, and n is an integer from 0 to 3.Type: GrantFiled: July 11, 2007Date of Patent: July 5, 2011Assignee: Central Glass Company, LimitedInventors: Tsuyoshi Ogawa, Mitsuya Ohashi
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Publication number: 20100323530Abstract: There is provided a modifier for lowering relative dielectric constant of a low dielectric constant film used in semiconductor devices, the modifier of the low dielectric constant film being characterized in that it contains as an effective component a silicon compound represented by formula (1) R3-nHnSiN3??(1) (R is a C1-C4 alkyl group, and n is an integer of 0-3).Type: ApplicationFiled: July 11, 2007Publication date: December 23, 2010Applicant: Central Glass Company, LimitedInventors: Tsuyoshi Ogawa, Mitsuya Ohashi
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Patent number: 7744769Abstract: The invention relates to a gas for removing deposits by a gas-solid reaction. This gas includes a hypofluorite that is defined as being a compound having at least one OF group in the molecule. Various deposits can be removed by the gas, and the gas can easily be made unharmful on the global environment after the removal of the deposits, due to the use of a hypofluorite. The gas may be a cleaning gas for cleaning, for example, the inside of an apparatus for producing semiconductor devices. This cleaning gas comprises 1-100 volume % of the hypofluorite. Alternatively, the gas of the invention may be an etching gas for removing an unwanted portion of a film deposited on a substrate. The unwanted portion can be removed by this etching gas as precisely as originally designed, due to the use of a hypofluorite. The invention further relates to a method for removing a deposit by the gas.Type: GrantFiled: October 6, 2006Date of Patent: June 29, 2010Assignee: Central Glass Company, LimitedInventors: Isamu Mouri, Tetsuya Tamura, Mitsuya Ohashi
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Patent number: 7417167Abstract: The invention relates to a process for producing carbonyl difluoride. This process includes the steps of (a) reacting carbon monoxide with a first metal fluoride in a reactor, thereby obtaining carbonyl difluoride and a second metal fluoride having in the molecule a fluorine atom number less than that of the first metal fluoride; and (b) reacting the second metal fluoride with fluorine in the reactor, thereby obtaining the first metal fluoride. The steps (a) and (b) are alternately repeated in the reactor, thereby repeatedly producing carbonyl difluoride.Type: GrantFiled: November 7, 2002Date of Patent: August 26, 2008Assignee: Central Glass Company LimitedInventors: Mitsuya Ohashi, Isamu Mori
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Patent number: 7355060Abstract: By reducing an organosilane represented by the formula (1), SiXnR4-n??(1) (wherein X represents a halogen or alkoxide, n represents an integer of 1-3, and R represents an alkyl group or aryl group), there is produced a corresponding organosilane represented by the formula (2), SiHnR4-n??(2) (wherein n represents an integer of 1-3, and R represents an alkyl group or aryl group). In this production method, an aromatic hydrocarbon series organic solvent is used as a reaction solvent, and aluminum lithium hydride is used as a hydrogenating agent.Type: GrantFiled: November 9, 2004Date of Patent: April 8, 2008Assignee: Central Glass Company, LimitedInventors: Tsuyoshi Ogawa, Yoshihiro Muramatsu, Mitsuya Ohashi
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Publication number: 20070149798Abstract: By reducing an organosilane represented by the formula (1), SiXnR4-n ??(1) (wherein X represents a halogen or alkoxide, n represents an integer of 1-3, and R represents an alkyl group or aryl group), there is produced a corresponding organosilane represented by the formula (2), SiHnR4-n ??(2) (wherein n represents an integer of 1-3, and R represents an alkyl group or aryl group). In this production method, an aromatic hydrocarbon series organic solvent is used as a reaction solvent, and aluminum lithium hydride is used as a hydrogenating agent.Type: ApplicationFiled: November 9, 2004Publication date: June 28, 2007Applicant: Central Glass Company, LimitedInventors: Tsuyoshi Ogawa, Yoshihiro Muramatsu, Mitsuya Ohashi
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Publication number: 20070029281Abstract: The invention relates to a gas for removing deposits by a gas-solid reaction. This gas includes a hypofluorite that is defined as being a compound having at least one OF group in the molecule. Various deposits can be removed by the gas, and the gas can easily be made unharmful on the global environment after the removal of the deposits, due to the use of a hypofluorite. The gas may be a cleaning gas for cleaning, for example, the inside of an apparatus for producing semiconductor devices. This cleaning gas comprises 1-100 volume % of the hypofluorite. Alternatively, the gas of the invention may be an etching gas for removing an unwanted portion of a film deposited on a substrate. The unwanted portion can be removed by this etching gas as precisely as originally designed, due to the use of a hypofluorite. The invention further relates to a method for removing a deposit by the gas.Type: ApplicationFiled: October 6, 2006Publication date: February 8, 2007Applicant: CENTRAL GLASS CO., LTD.Inventors: Isamu Mouri, Tetsuya Tamura, Mitsuya Ohashi
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Patent number: 7168436Abstract: The invention relates to a gas for removing deposits by a gas-solid reaction. This gas includes a hypofluorite that is defined as being a compound having at least one OF group in the molecule. Various deposits can be removed by the gas, and the gas can easily be made unharmful on the global environment after the removal of the deposits, due to the use of a hypofluorite. The gas may be a cleaning gas for cleaning, for example, the inside of an apparatus for producing semiconductor devices. This cleaning gas comprises 1–100 volume % of the hypofluorite. Alternatively, the gas of the invention may be an etching gas for removing an unwanted portion of a film deposited on a substrate. The unwanted portion can be removed by this etching gas as precisely as originally designed, due to the use of a hypofluorite. The invention further relates to a method for removing a deposit by the gas.Type: GrantFiled: November 12, 2003Date of Patent: January 30, 2007Assignee: Central Glass Company, LimitedInventors: Isamu Mouri, Tetsuya Tamura, Mitsuya Ohashi
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Publication number: 20040097091Abstract: The invention relates to a gas for removing deposits by a gas-solid reaction. This gas includes a hypofluorite that is defined as being a compound having at least one OF group in the molecule. Various deposits can be removed by the gas, and the gas can easily be made unharmful on the global environment after the removal of the deposits, due to the use of a hypofluorite. The gas may be a cleaning gas for cleaning, for example, the inside of an apparatus for producing semiconductor devices. This cleaning gas comprises 1-100 volume % of the hypofluorite. Alternatively, the gas of the invention may be an etching gas for removing an unwanted portion of a film deposited on a substrate. The unwanted portion can be removed by this etching gas as precisely as originally designed, due to the use of a hypofluorite. The invention further relates to a method for removing a deposit by the gas.Type: ApplicationFiled: November 12, 2003Publication date: May 20, 2004Applicant: Central Glass Company, LimitedInventors: Isamu Mouri, Tetsuya Tamura, Mitsuya Ohashi
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Patent number: 6673262Abstract: The invention relates to a gas for removing deposits by a gas-solid reaction. This gas includes a hypofluorite that is defined as being a compound having at least one OF group in the molecule. Various deposits can be removed by the gas, and the gas can easily be made unharmful on the global environment after the removal of the deposits, due to the use of a hypofluorite. The gas may be a cleaning gas for cleaning, for example, the inside of an apparatus for producing semiconductor devices. This cleaning gas comprises 1-100 volume % of the hypofluorite. Alternatively, the gas of the invention may be an etching gas for removing an unwanted portion of a film deposited on a substrate. The unwanted portion can be removed by this etching gas as precisely as originally designed, due to the use of a hypofluorite. The invention further relates to a method for removing a deposit by the gas.Type: GrantFiled: December 9, 1998Date of Patent: January 6, 2004Assignee: Central Glass Company, LimitedInventors: Isamu Mori, Tetsuya Tamura, Mitsuya Ohashi
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Patent number: 6659111Abstract: A cleaning gas includes HF gas whose concentration is greater than or equal to 1 vol % and oxygen containing gas whose concentration ranges from 0.5 to 99 vol %. The oxygen containing gas includes at least one of O2 gas, O3 gas, N2O gas, NO gas, CO gas and CO2 gas. The cleaning gas is employed to remove a deposited material generated in a vacuum treatment apparatus for producing a thin film of at least one of Ti, W, Ta, Ru, Ir, a compound thereof and an alloy thereof.Type: GrantFiled: January 11, 2000Date of Patent: December 9, 2003Assignees: Central Glass Company, Limited, Tokyo Electron LimitedInventors: Isamu Mouri, Tetsuya Tamura, Mitsuya Ohashi, Tadayuki Kawashima, Masahiko Matsudo, Tatsuo Hatano
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Publication number: 20030095911Abstract: The invention relates to a process for producing carbonyl difluoride. This process includes the steps of (a) reacting carbon monoxide with a first metal fluoride in a reactor, thereby obtaining carbonyl difluoride and a second metal fluoride having in the molecule a fluorine atom number less than that of the first metal fluoride; and (b) reacting the second metal fluoride with fluorine in the reactor, thereby obtaining the first metal fluoride. The steps (a) and (b) are alternately repeated in the reactor, thereby repeatedly producing carbonyl difluoride.Type: ApplicationFiled: November 7, 2002Publication date: May 22, 2003Applicant: Central Glass Company, LimitedInventors: Mitsuya Ohashi, Isamu Mori
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Patent number: 6147006Abstract: A cleaning gas which is employed to remove an unnecessary deposited material formed in a thin film forming apparatus by thermal decomposition of pentaethoxytantalum or tetraethoxysilane without damaging a reactor, tools, parts and piping of a silicon oxide film-forming apparatus or a tantalum oxide film-forming apparatus. The cleaning gas comprises HF gas and at least one of an oxygen-containing gas, a fluorine gas, a chlorine fluoride gas, a bromine fluoride gas and an iodine fluoride gas.Type: GrantFiled: January 7, 2000Date of Patent: November 14, 2000Assignee: Central Glass Company, LimitedInventors: Isamu Mouri, Tetsuya Tamura, Mitsuya Ohashi, Tadayuki Kawashima
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Patent number: 5234679Abstract: A method of refining tungsten hexafluoride containing molybdenum hexafluoride as an impurity includes the step of contacting the tungsten hexafluoride with at least one metal selected from the group consisting of Mo, W, Cu, Ni, Fe, Co, Zn, Ti, Al, Ca and Mg at a temperature ranging from 100.degree. to 500.degree. C. Molybdenum hexafluoride is efficiently removed from the tungsten hexafluoride by the method.Type: GrantFiled: April 10, 1992Date of Patent: August 10, 1993Assignee: Central Glass Company, LimitedInventors: Takashi Suenaga, Mitsuya Ohashi, Takashi Yoneda, Yoshiyuki Kobayashi