Patents by Inventor Mitsuya Utsuno

Mitsuya Utsuno has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD OF FORMING STRUCTURES USING A NEUTRAL BEAM, STRUCTURES FORMED USING THE METHOD AND REACTOR SYSTEM FOR PERFORMING THE METHOD
    Publication number: 20230250531
    Abstract: Methods of forming structures using a neutral beam, structures formed using a neutral beam, and reactor systems for forming the structures are disclosed. The neutral beam can be used to provide activated species during deposition of a layer and/or to provide activated species to treat a deposited layer.
    Type: Application
    Filed: April 5, 2023
    Publication date: August 10, 2023
    Inventors: Tomohiro Kubota, Mitsuya Utsuno, Toshihisa Nozawa, Seiji Samukawa, Hua Hsuan Chen
  • Method of forming structures using a neutral beam
    Patent number: 11643724
    Abstract: Methods of forming structures using a neutral beam, structures formed using a neutral beam, and reactor systems for forming the structures are disclosed. The neutral beam can be used to provide activated species during deposition of a layer and/or to provide activated species to treat a deposited layer.
    Type: Grant
    Filed: July 15, 2020
    Date of Patent: May 9, 2023
    Assignee: ASM IP Holding B.V.
    Inventors: Tomohiro Kubota, Mitsuya Utsuno, Toshihisa Nozawa, Seiji Samukawa, Hua Hsuan Chen
  • Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
    Patent number: 11646197
    Abstract: A film having filling capability is deposited by forming a viscous polymer in a gas phase by striking an Ar, He, or N2 plasma in a chamber filled with a volatile hydrocarbon precursor that can be polymerized within certain parameter ranges which define mainly partial pressure of precursor during a plasma strike, and wafer temperature.
    Type: Grant
    Filed: August 6, 2020
    Date of Patent: May 9, 2023
    Assignee: ASM IP Holding B.V.
    Inventors: Timothee Julien Vincent Blanquart, Mitsuya Utsuno, Yoshio Susa, Atsuki Fukazawa, Toshio Nakanishi
  • Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure
    Patent number: 11626316
    Abstract: Methods and systems for filling a recess on a surface of a substrate with carbon-containing material are disclosed. Exemplary methods include forming a first carbon layer within the recess, etching a portion of the first carbon layer within the recess, and forming a second carbon layer within the recess. Structures formed using the method or system are also disclosed.
    Type: Grant
    Filed: November 17, 2020
    Date of Patent: April 11, 2023
    Assignee: ASM IP Holding B.V.
    Inventors: Mitsuya Utsuno, Yan Zhang, Yoshio Susa, Atsuki Fukazawa
  • METHOD OF FORMING HIGH ASPECT RATIO FEATURES
    Publication number: 20210225642
    Abstract: Methods and systems for forming high aspect ratio features on a substrate are disclosed. Exemplary methods include forming a first carbon layer within a recess, etching a portion of the first carbon layer within the recess, and forming a second carbon layer within the recess. Structures formed using the methods or systems are also disclosed.
    Type: Application
    Filed: January 13, 2021
    Publication date: July 22, 2021
    Inventors: Mitsuya Utsuno, Hirotsugu Sugiura, Yoshio Susa
  • METHOD OF DEPOSITING CARBON-CONTAINING MATERIAL ON A SURFACE OF A SUBSTRATE, STRUCTURE FORMED USING THE METHOD, AND SYSTEM FOR FORMING THE STRUCTURE
    Publication number: 20210151348
    Abstract: Methods and systems for filling a recess on a surface of a substrate with carbon-containing material are disclosed. Exemplary methods include forming a first carbon layer within the recess, etching a portion of the first carbon layer within the recess, and forming a second carbon layer within the recess. Structures formed using the method or system are also disclosed.
    Type: Application
    Filed: November 17, 2020
    Publication date: May 20, 2021
    Inventors: Mitsuya Utsuno, Yan Zhang, Yoshio Susa, Atsuki Fukazawa
  • METHOD OF FORMING STRUCTURES USING A NEUTRAL BEAM, STRUCTURES FORMED USING THE METHOD AND REACTOR SYSTEM FOR PERFORMING THE METHOD
    Publication number: 20210017648
    Abstract: Methods of forming structures using a neutral beam, structures formed using a neutral beam, and reactor systems for forming the structures are disclosed. The neutral beam can be used to provide activated species during deposition of a layer and/or to provide activated species to treat a deposited layer.
    Type: Application
    Filed: July 15, 2020
    Publication date: January 21, 2021
    Inventors: Tomohiro Kubota, Mitsuya Utsuno, Toshihisa Nozawa, Seiji Samukawa, Hua Hsuan Chen
  • METHOD FOR DEPOSITING SILICON-FREE CARBON-CONTAINING FILM AS GAP-FILL LAYER BY PULSE PLASMA-ASSISTED DEPOSITION
    Publication number: 20200365391
    Abstract: A film having filling capability is deposited by forming a viscous polymer in a gas phase by striking an Ar, He, or N2 plasma in a chamber filled with a volatile hydrocarbon precursor that can be polymerized within certain parameter ranges which define mainly partial pressure of precursor during a plasma strike, and wafer temperature.
    Type: Application
    Filed: August 6, 2020
    Publication date: November 19, 2020
    Inventors: Timothee Julien Vincent Blanquart, Mitsuya Utsuno, Yoshio Susa, Atsuki Fukazawa, Toshio Nakanishi
  • Method for etching a carbon-containing feature
    Patent number: 10811256
    Abstract: Methods for etching a carbon-containing feature are provided. The methods may include: providing a substrate having a carbon-containing feature formed thereon in a reaction space; supplying helium gas and an oxidizing to the reaction space; generating a plasma within the reaction space from a gas mixture comprising helium gas and the oxidizing gas; and anisotropically etching the carbon-containing feature utilizing the plasma to cause lateral etching of the carbon-containing feature.
    Type: Grant
    Filed: October 16, 2018
    Date of Patent: October 20, 2020
    Assignee: ASM IP Holding B.V.
    Inventors: Mitsuya Utsuno, Tomohiro Kubota, Dai Ishikawa
  • Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
    Patent number: 10755922
    Abstract: A film having filling capability is deposited by forming a viscous polymer in a gas phase by striking an Ar, He, or N2 plasma in a chamber filled with a volatile hydrocarbon precursor that can be polymerized within certain parameter ranges which define mainly partial pressure of precursor during a plasma strike, and wafer temperature.
    Type: Grant
    Filed: May 30, 2019
    Date of Patent: August 25, 2020
    Assignee: ASM IP Holding B.V.
    Inventors: Timothee Julien Vincent Blanquart, Mitsuya Utsuno, Yoshio Susa, Atsuki Fukazawa, Toshio Nakanishi
  • METHOD FOR ETCHING A CARBON-CONTAINING FEATURE
    Publication number: 20200118811
    Abstract: Methods for etching a carbon-containing feature are provided. The methods may include: providing a substrate having a carbon-containing feature formed thereon in a reaction space; supplying helium gas and an oxidizing to the reaction space; generating a plasma within the reaction space from a gas mixture comprising helium gas and the oxidizing gas; and anisotropically etching the carbon-containing feature utilizing the plasma to cause lateral etching of the carbon-containing feature.
    Type: Application
    Filed: October 16, 2018
    Publication date: April 16, 2020
    Inventors: Mitsuya Utsuno, Tomohiro Kubota, Dai Ishikawa
  • METHOD FOR DEPOSITING SILICON-FREE CARBON-CONTAINING FILM AS GAP-FILL LAYER BY PULSE PLASMA-ASSISTED DEPOSITION
    Publication number: 20200013612
    Abstract: A film having filling capability is deposited by forming a viscous polymer in a gas phase by striking an Ar, He, or N2 plasma in a chamber filled with a volatile hydrocarbon precursor that can be polymerized within certain parameter ranges which define mainly partial pressure of precursor during a plasma strike, and wafer temperature.
    Type: Application
    Filed: May 30, 2019
    Publication date: January 9, 2020
    Inventors: Timothee Julien Vincent Blanquart, Mitsuya Utsuno, Yoshio Susa, Atsuki Fukazawa, Toshio Nakanishi