Abstract: The semiconductor device includes a semiconductor base body (11) formed of a damaged layer (102) serving as a gettering layer, a P+ collector layer (103), an N+ buffer layer (104), and an N− layer (105) laid one on top of another, a gate electrode (27) selectively formed on the upper main surface of the semiconductor base body (11) specifically on the external main surface of the N− layer (105), with a gate insulating film (26) interposed therebetween, an emitter electrode (28) selectively formed on the upper main surface of the semiconductor base body (11), and a collector electrode (106) formed on the lower main surface of the semiconductor base body (11), specifically on the external main surface of the damaged layer (102).

Abstract: In order to inhibit destruction during a turn-off state, a cathode electrode (6) is not connected to the overall major surface of a semiconductor substrate (10), but selectively connected to a region which is substantially opposed to an anode electrode (5). When a forward voltage is applied, therefore, an electric field which is generated in the semiconductor substrate (10) is distributed substantially only in a region immediately under a P-type diffusion layer (2), to hardly spread into a peripheral region positioned outside the region. Consequently, carriers which are injected from the P-type diffusion layer (2) and an N.sup.+ layer (4) into an N.sup.- layer (1) hardly spread to the peripheral region, but are stored substantially only in the region immediately under the P-type diffusion layer (2). Thus, concentration of a reverse current is relieved during a turn-off state in a peripheral edge portion of the P-type diffusion layer (2).