Patents by Inventor Mittsuru Watabe

Mittsuru Watabe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor circuit having drivers of different withstand voltage within the same chip
    Patent number: 7161264
    Abstract: A semiconductor device comprises an embedded insulation layer 101 formed on a semiconductor substrate 100, plural power semiconductor elements 2, 3 formed on a semiconductor substrate 100 on the embedded insulation layer, a trench 4 formed on the semiconductor substrate and isolating between the power semiconductor elements, and an isolator 5 insulating and driving control electrodes of the power semiconductor elements, and the power semiconductor elements 2, 3 such as transistors can be used, being connected each other in series.
    Type: Grant
    Filed: August 19, 2003
    Date of Patent: January 9, 2007
    Assignee: Hitachi, Ltd.
    Inventors: Nobuyasu Kanekawa, Kohei Sakurai, Shoji Sasaki, Kenji Tabuchi, Mittsuru Watabe
  • Semiconductor device
    Publication number: 20040051160
    Abstract: A semiconductor device comprises an embedded insulation layer 101 formed on a semiconductor substrate 100, plural power semiconductor elements 2, 3 formed on a semiconductor substrate 100 on the embedded insulation layer, a trench 4 formed on the semiconductor substrate and isolating between the power semiconductor elements, and an isolator 5 insulating and driving control electrodes of the power semiconductor elements, and the power semiconductor elements 2, 3 such as transistors can be used, being connected each other in series.
    Type: Application
    Filed: August 19, 2003
    Publication date: March 18, 2004
    Applicant: Hitachi, Ltd.
    Inventors: Nobuyasu Kanekawa, Kohei Sakurai, Shoji Sasaki, Kenji Tabuchi, Mittsuru Watabe