Patents by Inventor Mituhiro Kakefu

Mituhiro Kakefu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device
    Patent number: 8716826
    Abstract: In a semiconductor device having a pn-junction diode structure that includes anode diffusion region including edge area, anode electrode on anode diffusion region, and insulator film on edge area of anode diffusion region, the area of anode electrode above anode diffusion region with insulator film interposed between anode electrode and anode diffusion region is narrower than the area of insulator film on edge area of anode diffusion region.
    Type: Grant
    Filed: April 16, 2012
    Date of Patent: May 6, 2014
    Assignee: Fuji Electric Co., Ltd.
    Inventors: Ryouichi Kawano, Tomoyuki Yamazaki, Michio Nemoto, Mituhiro Kakefu
  • SEMICONDUCTOR DEVICE
    Publication number: 20120193749
    Abstract: In a semiconductor device having a pn-junction diode structure that includes anode diffusion region including edge area, anode electrode on anode diffusion region, and insulator film on edge area of anode diffusion region, the area of anode electrode above anode diffusion region with insulator film interposed between anode electrode and anode diffusion region is narrower than the area of insulator film on edge area of anode diffusion region.
    Type: Application
    Filed: April 16, 2012
    Publication date: August 2, 2012
    Applicant: Fuji Electric Device Technology Co., Ltd.
    Inventors: Ryouichi KAWANO, Tomoyuki Yamazaki, Michio Nemoto, Mituhiro Kakefu
  • Semiconductor device
    Patent number: 8178941
    Abstract: In a semiconductor device having a pn-junction diode structure that includes anode diffusion region including edge area, anode electrode on anode diffusion region, and insulator film on edge area of anode diffusion region, the area of anode electrode above anode diffusion region with insulator film interposed between anode electrode and anode diffusion region is narrower than the area of insulator film on edge area of anode diffusion region.
    Type: Grant
    Filed: July 22, 2009
    Date of Patent: May 15, 2012
    Assignee: Fuji Electric Co., Ltd.
    Inventors: Ryouichi Kawano, Tomoyuki Yamazaki, Michio Nemoto, Mituhiro Kakefu
  • SEMICONDUCTOR DEVICE
    Publication number: 20100019342
    Abstract: In a semiconductor device having a pn-junction diode structure that includes anode diffusion region including edge area, anode electrode on anode diffusion region, and insulator film on edge area of anode diffusion region, the area of anode electrode above anode diffusion region with insulator film interposed between anode electrode and anode diffusion region is narrower than the area of insulator film on edge area of anode diffusion region.
    Type: Application
    Filed: July 22, 2009
    Publication date: January 28, 2010
    Applicant: Fuji Electric Device Technology Co., Ltd.
    Inventors: Ryouichi KAWANO, Tomoyuki YAMAZAKI, Michio NEMOTO, Mituhiro KAKEFU