Abstract: A parallel glass which is a prism having a parallelogram-shaped cross section in an x-y direction, and parallel glasses which are prisms having a parallelogram-shaped cross section in the x-y direction and each include grooves formed in one surface in a z direction perpendicular to the x-y direction, are stacked in direct contact with each other such that the grooves are located on the inside, and light trying to enter the grooves is subjected is total reflection, thereby changing incident parallel beams with a pitch of 13 mm into emergent parallel beams with a pitch of 1 mm.

Abstract: A pattern exposure method and a pattern exposure apparatus in which the throughput is improved with an inexpensive apparatus and without a low running cost. Output faces of a plurality of laser beams emitted from a plurality of semiconductor lasers respectively are arranged in two directions. One of the directions is the same direction as the scanning direction of a polygon mirror while the other is a direction crossing the scanning direction of the polygon mirror. In this event, the array pitch of the output faces arranged in the direction crossing the scanning direction of the polygon mirror is made equal to resolution of an exposure pattern. In this event, the wavelength of each laser may be made not longer than 410 nm.

Abstract: A pattern exposure method and a pattern exposure apparatus in which the throughput is improved with an inexpensive apparatus and without a low running cost. Output faces of a plurality of laser beams emitted from a plurality of semiconductor lasers respectively are arranged in two directions. One of the directions is the same direction as the scanning direction of a polygon mirror while the other is a direction crossing the scanning direction of the polygon mirror. In this event, the array pitch of the output faces arranged in the direction crossing the scanning direction of the polygon mirror is made equal to resolution of an exposure pattern. In this event, the wavelength of each laser may be made not longer than 410 nm.

Abstract: A parallel glass which is a prism having a parallelogram-shaped cross section in an x-y direction, and parallel glasses which are prisms having a parallelogram-shaped cross section in the x-y direction and each include grooves formed in one surface in a z direction perpendicular to the x-y direction, are stacked in direct contact with each other such that the grooves are located on the inside, and light trying to enter the grooves is subjected is total reflection, thereby changing incident parallel beams with a pitch of 13 mm into emergent parallel beams with a pitch of 1 mm.

Abstract: A maskless exposure method and a maskless exposure apparatus in which maskless exposure can be performed efficiently with high-directivity illumination light, while the exposure efficiency of solder resist can be improved. Blue-violet semiconductor lasers 12A emitting laser beams 1a with a wavelength of 405 nm and ultraviolet semiconductor lasers 12B emitting laser beams 1b with a wavelength of 375 nm are provided to irradiate a substrate 8 with the laser beams 1a and 1b whose optical axes are made coaxial. In this event, one and the same place on the substrate 8 is irradiated with the laser beams 1a and 1b a plurality of times. Thus, the variation in intensity of the laser beams 1a and 1b is averaged.

Abstract: A pattern exposure method and a pattern exposure apparatus in which the throughput is improved with an inexpensive apparatus and without a low running cost. Output faces of a plurality of laser beams emitted from a plurality of semiconductor lasers respectively are arranged in two directions. One of the directions is the same direction as the scanning direction of a polygon mirror while the other is a direction crossing the scanning direction of the polygon mirror. In this event, the array pitch of the output faces arranged in the direction crossing the scanning direction of the polygon mirror is made equal to resolution of an exposure pattern. In this event, the wavelength of each laser may be made not longer than 410 nm.