Abstract: An apparatus is provided which comprises: a package substrate, an integrated circuit device coupled to a surface of the package substrate, a first material on the surface of the package substrate, the first material contacting one or more lateral sides of the integrated circuit device, the first material extending at least to a surface of the integrated circuit device opposite the package substrate, two or more separate fins over a surface of the integrated circuit device, the two or more fins comprising a second material having a different composition than the first material, and a third material having a different composition than the second material, the third material over the surface of the integrated circuit device and between the two or more fins. Other embodiments are also disclosed and claimed.

Abstract: Ultra-thin, hyper-density semiconductor packages and techniques of forming such packages are described. An exemplary semiconductor package is formed with one or more of: (i) metal pillars having an ultra fine pitch (e.g., a pitch that is greater than or equal to 150 ?m, etc.); (ii) a large die to-package ratio (e.g., a ratio that is equal to or greater than 0.85, etc.); and (iii) a thin pitch translation interposer. Another exemplary semiconductor package is formed using coreless substrate technology, die back metallization, and low temperature solder technology for ball grid array (BGA) metallurgy. Other embodiments are described.

Abstract: An integrated circuit package may be formed having at least one heat dissipation structure within the integrated circuit package itself. In one embodiment, the integrated circuit package may include a substrate; at least one integrated circuit device, wherein the at least one integrated circuit device is electrically attached to the substrate; a mold material on the substrate and adjacent to the at least one integrated circuit device; and at least one heat dissipation structure contacting the at least one integrated circuit, wherein the at least one heat dissipation structure is embedded either within the mold material or between the mold material and the substrate.

Abstract: An apparatus is provided which comprises: a plurality of dielectric layers forming a substrate, a plurality of first conductive contacts on a first surface of the substrate, a cavity in the first surface of the substrate defining a second surface parallel to the first surface, a plurality of second conductive contacts on the second surface of the substrate, one or more integrated circuit die(s) coupled with the second conductive contacts, and mold material at least partially covering the one or more integrated circuit die(s) and the first conductive contacts. Other embodiments are also disclosed and claimed.

Abstract: Electronic device package technology is disclosed. In one example, an electronic device package can include a bottom surface and a side surface extending from the bottom surface. The side surface can be oriented at a non-perpendicular angle relative to the bottom surface. In another example, an electronic device package can include a top planar surface having a first area, a bottom planar surface having a second area, and a side surface extending between the top surface and the bottom surface. The second area can be larger than the first area. In yet another example, an electronic device package can include a substrate defining a plane, an electronic component disposed on the substrate, and a layer of material disposed about a lateral side of the electronic component. The layer of material can be oriented at an angle of less than 90 degrees relative to the plane.

Abstract: The present disclosure is directed to systems and methods for improving heat distribution and heat removal efficiency in PoP semiconductor packages. A PoP semiconductor package includes a first semiconductor package that is physically, communicably, and conductively coupled to a stacked second semiconductor package. A thermally conductive member that includes at least one thermally conductive member may be disposed between the first semiconductor package and the second semiconductor package. The thermally conductive member may include: a single thermally conductive element; multiple thermally conductive elements; or a core that includes at least one thermally conductive element. The thermally conductive elements are thermally conductively coupled to an upper surface of the first semiconductor package and to the lower surface of the second semiconductor package to facilitate the transfer of heat from the first semiconductor package to the second semiconductor package.

Abstract: Electromagnetically shielded electronic device technology is disclosed. In an example, a method of making an electronic device package can comprise providing a substrate having a conductor pad and an electronic component. The method can also comprise forming a conformal insulating layer on the substrate and electronic component. The conformal insulating layer conforms to the electronic component. The method can further comprise exposing the conductor pad. In addition, the method can comprise forming an electrically conductive electromagnetic interference (EMI) layer on the insulating layer and in contact with the conductor pad.

Abstract: A stacked-chip assembly including an IC chip or die that is electrically interconnected to another chip and/or a substrate by one or more traces that are coupled through sidewalls of the chip. Electrical traces extending over a sidewall of the chip may contact metal traces of one or more die interconnect levels that intersect the chip edge. Following chip fabrication, singulation may expose a metal trace that intersects the chip sidewall. Following singulation, a conductive sidewall interconnect trace formed over the chip sidewall is to couple the exposed trace to a top or bottom side of a chip or substrate. The sidewall interconnect trace may be further coupled to a ground, signal, or power rail. The sidewall interconnect trace may terminate with a bond pad to which another chip, substrate, or wire lead is bonded. The sidewall interconnect trace may terminate at another sidewall location on the same chip or another chip.

Abstract: Electronic device package technology is disclosed. In one example, an electronic device package can include a bottom surface and a side surface extending from the bottom surface. The side surface can be oriented at a non-perpendicular angle relative to the bottom surface. In another example, an electronic device package can include a top planar surface having a first area, a bottom planar surface having a second area, and a side surface extending between the top surface and the bottom surface. The second area can be larger than the first area. In yet another example, an electronic device package can include a substrate defining a plane, an electronic component disposed on the substrate, and a layer of material disposed about a lateral side of the electronic component. The layer of material can be oriented at an angle of less than 90 degrees relative to the plane.

Abstract: A stacked-chip assembly including an IC chip or die that is electrically interconnected to another chip and/or a substrate by one or more traces that are coupled through sidewalls of the chip. Electrical traces extending over a sidewall of the chip may contact metal traces of one or more die interconnect levels that intersect the chip edge. Following chip fabrication, singulation may expose a metal trace that intersects the chip sidewall. Following singulation, a conductive sidewall interconnect trace formed over the chip sidewall is to couple the exposed trace to a top or bottom side of a chip or substrate. The sidewall interconnect trace may be further coupled to a ground, signal, or power rail. The sidewall interconnect trace may terminate with a bond pad to which another chip, substrate, or wire lead is bonded. The sidewall interconnect trace may terminate at another sidewall location on the same chip or another chip.

Abstract: Electronic device package technology is disclosed. In one example, an electronic device package can include a bottom surface and a side surface extending from the bottom surface. The side surface can be oriented at a non-perpendicular angle relative to the bottom surface. In another example, an electronic device package can include a top planar surface having a first area, a bottom planar surface having a second area, and a side surface extending between the top surface and the bottom surface. The second area can be larger than the first area. In yet another example, an electronic device package can include a substrate defining a plane, an electronic component disposed on the substrate, and a layer of material disposed about a lateral side of the electronic component. The layer of material can be oriented at an angle of less than 90 degrees relative to the plane.

Abstract: Electronic device package technology is disclosed. In one example, an electronic device package can include a bottom surface and a side surface extending from the bottom surface. The side surface can be oriented at a non-perpendicular angle relative to the bottom surface. In another example, an electronic device package can include a top planar surface having a first area, a bottom planar surface having a second area, and a side surface extending between the top surface and the bottom surface. The second area can be larger than the first area. In yet another example, an electronic device package can include a substrate defining a plane, an electronic component disposed on the substrate, and a layer of material disposed about a lateral side of the electronic component. The layer of material can be oriented at an angle of less than 90 degrees relative to the plane.

Abstract: Electromagnetically shielded electronic device technology is disclosed. In an example, a method of making an electronic device package can comprise providing a substrate having a conductor pad and an electronic component. The method can also comprise forming a conformal insulating layer on the substrate and electronic component. The conformal insulating layer conforms to the electronic component. The method can further comprise exposing the conductor pad. In addition, the method can comprise forming an electrically conductive electromagnetic interference (EMI) layer on the insulating layer and in contact with the conductor pad.

Abstract: An integrated circuit package may include a plurality of interconnects, and an integrated package substrate coupled to the plurality of interconnects and comprising an integrated circuit package substrate core. A first surface of the integrated circuit package substrate core may define a depression.

Abstract: An integrated circuit package may include a plurality of interconnects, and an integrated package substrate coupled to the plurality of interconnects and comprising an integrated circuit package substrate core. A first surface of the integrated circuit package substrate core may define a depression.

Abstract: A linear coefficient of thermal expansion (CTE) mismatch between two materials, such as between a microelectronic die and a mounting substrate, may induce stress at the interface of the materials. The temperature changes present during the process of attaching a die to a mounting substrate can cause cracking and failure in the electrical connections used to connect the die and mounting substrate. A material with a CTE approximately matching the die CTE is introduced in the mounting substrate to reduce the stress and cracking at the electrical connections between the die and mounting substrate. Additionally, this material may comprise thin film capacitors useful for decoupling power supplies.

Abstract: A compliant structure for an electronic device comprises a substrate (110) composed of a first material (111) and a compliant zone (120) within the substrate. A plurality of solder joints (280) are located between, and form a connection between, the substrate and the electronic device (290). The compliant zone reduces the degree of deformation experienced by the solder joints due to thermal mismatch loading between the substrate and the die during attachment of the die to the substrate (chip attach). This reduction in solder joint deformation reduces the likelihood that the solder joints will crack.

Abstract: An integrated circuit package may include a plurality of interconnects, and an integrated package substrate coupled to the plurality of interconnects and comprising an integrated circuit package substrate core. A first surface of the integrated circuit package substrate core may define a depression.

Abstract: A compliant structure for an electronic device comprises a substrate (110) composed of a first material (111) and a compliant zone (120) within the substrate. A plurality of solder joints (280) are located between, and form a connection between, the substrate and the electronic device (290). The compliant zone reduces the degree of deformation experienced by the solder joints due to thermal mismatch loading between the substrate and the die during attachment of the die to the substrate (chip attach). This reduction in solder joint deformation reduces the likelihood that the solder joints will crack.

Abstract: A linear coefficient of thermal expansion (CTE) mismatch between two materials, such as between a microelectronic die and a mounting substrate, may induce stress at the interface of the materials. The temperature changes present during the process of attaching a die to a mounting substrate can cause cracking and failure in the electrical connections used to connect the die and mounting substrate. A material with a CTE approximately matching the die CTE is introduced in the mounting substrate to reduce the stress and cracking at the electrical connections between the die and mounting substrate. Additionally, this material may comprise thin film capacitors useful for decoupling power supplies.