Abstract: An active binder for brazing which is for use in brazing metals to ceramics; a ceramic part for brazing to which the binder has been applied; a brazed product; and a foil-form brazing material for use in producing a brazed metal/ceramic product. The active binder contains particles of either an active metal or a compound thereof (preferably titanium hydride) added thereto. The part for brazing comprises a part made of a ceramic and particles of either an active metal or a compound thereof which have been fixed to the ceramic part in at least the brazing area through a binder. The brazed product is produced by superposing the brazing area in the part for brazing on the brazing area in a metal part and then heating them in a furnace to melt the brazing particles and thereby braze the parts together.

Abstract: The crude Ti particles prepared by molten salt electrolysis or Iodide method are classified into each particle diameter according to contents of impurities, and the crude Ti particles having a desired particle diameter are selected from the crude Ti particles classified depending on each particle diameter. Otherwise, the crude Ti particles are acid-treated. Then they are electron-beam-melted. Through the above production process, there is prepared a highly purified Ti material having an oxygen content of not more than 350 ppm, Fe, Ni and Cr contents of not more than 15 ppm each, Na and K contents of not more than 0.5 ppm each, a reduction of area as a material characteristic of not less than 70%, and a thermal conductivity of not less than 16 W/m K. In short, the highly purified Ti material satisfying high purity, good processability and good thermal conductivity can be obtained.

Abstract: The crude Ti particles prepared by molten salt electrolysis or Iodide method are classified into each particle diameter according to contents of impurities, and the crude Ti particles having a desired particle diameter are selected from the crude Ti particles classified depending on each particle diameter. Otherwise, the crude Ti particles are acid-treated. Then they are electron-beam-melted. Through the above production process, there is prepared a highly purified Ti material having an oxygen content of not more than 350 ppm, Fe, Ni and Cr contents of not more than 15 ppm each, Na and K contents of not more than 0.5 ppm each, a reduction of area as a material characteristic of not less than 70%, and a thermal conductivity of not less than 16 W/m K. In short, the highly purified Ti material satisfying high purity, good processability and good thermal conductivity can be obtained.

Abstract: This is a highly purified metal comprising one metal selected from the group consisted of titanium, zirconium and hafnium. The highly purified metal has an Al content of not more than 10 ppm. It also has an oxygen content of more than 250 ppm, each of Fe, Ni and Cr contents not more than 10 ppm and each of Na and K contents not more than 0.1 ppm. The highly purified metal is obtained by either purifying crude metal by the iodide process or surface treating crude metal to remove a contaminated layer existing on the surface thereof and then melting The surface treated material with electron bean in a high vacuum.

Abstract: According to the present invention, metal silicide grains are coupled with each other in a linked manner so as to provide a metal silicide phase, and Si grains forming a Si phase are dispersed in the gaps of the metal silicide phase discontinuously so as to provide a mixed structure of a sputtering target of high density and containing carbon at a rate less than 100 ppm. Because of the high density and high strength of the target, generation of particles at the time of sputtering can be reduced, and because of the reduced content of carbon, mixing of carbon in a thin film formed by the sputtering can be prevented.

Abstract: The crude Ti particles prepared by molten salt electrolysis or Iodide method are classified into each particle diameter according to contents of impurities, and the crude Ti particles having a desired particle diameter are selected from the crude Ti particles classified depending on each particle diameter. Otherwise, the crude Ti particles are acid-treated. Then they are electron-beam-melted. Through the above production process, there is prepared a highly purified Ti material having an oxygen content of not more than 350 ppm, Fe, Ni and Cr contents of not more than 15 ppm each, Na and K contents of not more than 0.5 ppm each, a reduction of area as a material characteristic of not less than 70%, and a thermal conductivity of not less than 16 W/m K. In short, the highly purified Ti material satisfying high purity, good processability and good thermal conductivity can be obtained.

Abstract: A sputtering target comprises an oxide containing niobium, a silicide containing niobium and silicon oxide substantially for the rest. The sputtering target is formed e.g. by reactive sintering a powdery niobium or a powdery niobium alloy containing silicon oxide in the range of 15 to 70 mol % by mole ratio. A film resistor formed by using the sputtering target exhibits high specific resistance, good stabilities of resistance and a film composition and excellent reproducibility and is used as a heat generating resistor in e.g. a thermal printer head.

Abstract: According to the present invention, silicide grains are coupled with each other in a linked manner so as to provide a metal silicide phase, and grains forming a Si phase are dispersed in the gaps of the metal silicide phase discontinuously so as to provide a mixed structure of a sputtering target of high density and containing carbon at a rate less than 100 ppm. Because of the high density and high strength of the target, generation of particles at the time of sputtering can be reduced, and because of the reduced content of carbon, mixing of carbon in a thin film formed by the sputtering can be prevented.

Abstract: A sputtering target that consists essentially of a continuous matrix of Ti-W phase, Ti phase having a particle diameter of 50 .mu.m or less distributed in the matrix, and a W phase having a particle diameter of 20 .mu.m or less also distributed in the matrix. Preferably the target contains aluminum in the range of 1 ppm or less. The target has high density and a low impurity content, which reduces the generation of particles from the target when it is used for sputtering. A method of manufacturing the sputtering target is also disclosed.

Abstract: This is a highly purified metal comprising one metal selected from the group consisted of titanium, zirconium and hafnium. The highly purified metal has an Al content of not more than 10 ppm. It also has an oxygen content of more than 250 ppm, each of Fe, Ni and Cr contents not more than 10 ppm and each of Na and K contents not more than 0.1 ppm. The highly purified metal is obtained by either purifying crude metal by the iodide process or surface treating crude metal to remove a contaminated layer existing on the surface thereof and then melting The surface treated material with electron bean in a high vacuum.

Abstract: In the present invention, metal silicide grains form an interlinked structure of a metal silicide phase, and Si grains which form a Si phase are discontinuously dispersed between the metal silicide phase to provide a sputtering target having a high density two-phased structure and having an aluminum content of 1 ppm or less. Because of the high density and high strength of the target, the generation of particles from the target during sputtering is reduced, and due to the reduced carbon content of the target, the mixing of carbon into the thin film during sputtering can be prevented.

Abstract: According to the present invention, metal silicide grains are coupled with each other in a linked manner so as to provide a metal silicide phase, and Si grains forming a Si phase are dispersed in the gaps of the metal silicide phase discontinuously so as to provide a mixed structure of a sputtering target of high density and containing carbon at a rate less than 100 ppm. Because of the high density and high strength of the target, generation of particles at the time of sputtering can be reduced, and because of the reduced content of carbon, mixing of carbon in a thin film formed by the sputtering can be prevented.

Abstract: A high temperature heat-treating jig characterized by forming a tungsten layer or a tungsten alloy layer on the surface of a heat-resistant base to avoid discoloration and color shading during the heat treatment at a high temperature.

Abstract: A high temperature heat-treating jig characterized by forming a tungsten layer or a tungsten alloy layer on the surface of a heat-resistant base to avoid discoloration and color shading during the heat treatment at a high temperature.

Abstract: The crude Ti particles prepared by molten salt electrolysis or Iodide method are classified into each particle diameter according to contents of impurities, and the crude Ti particles having a desired particle diameter are selected from the crude Ti particles classified depending on each particle diameter. Otherwise, the crude Ti particles are acid-treated. Then they are electron-beam-melted. Through the above production process, there is prepared a highly purified Ti material having an oxygen content of not more than 350 ppm, Fe, Ni and Cr contents of not more than 15 ppm each, Na and K contents of not more than 0.5 ppm each, a reduction of area as a material characteristic of not less than 70%, and a thermal conductivity of not less than 16 W/m K. In short, the highly purified Ti material satisfying high purity, good processability and good thermal conductivity can be obtained.

Abstract: This is a highly purified metal comprising one metal selected from the group consisted of titanium, zirconium and hafnium. The highly purified metal has an Al content of not more than 10 ppm. It also has an oxygen content of not more than 250 ppm, each of Fe, Ni and Cr contents not more than 10 ppm and each of Na and K contents not more than 0.1 ppm. The highly purified metal is obtained by either purifying crude metal by the iodide process or surface treating crude metal to remove a contaminated layer existing on the surface thereof and then melting the surface treated material with electron beam in a high vacuum.

Abstract: The present invention is a sputtering target for formation of an alloy film, which comprises 15 to 50 atomic percent of molybdenum or tungsten, the remaining atomic percent of tantalum, and concomitant impurities, which can provide electrical wiring having very low specific resistance as well as excellent workability and stability, whereby high definition and high integration of various elements such as semiconductor devices can be achieved. In consequence, it is fair to say that this invention is industrially very useful.

Abstract: A heat-resisting steel contains 0.08 to 0.15 percent by weight of carbon, over 0.2 to 0.6 percent of silicon, 0.3 to 0.8 percent of manganese, 0.6 to 1.2 percent of nickel, 9.5 to 11.0 percent of chromium, 0.7 to 1.5 percent of molybdenum, 0.15 to 0.27 percent of vanadium, 0.10 to 0.27 percent in total of niobium and/or tantalum, 0.03 to 0.08 percent of nitrogen, over 1.1 to 1.3 percent of tungsten, and iron for the remainder. The creep rupture strength of this heat-resisting steel is much higher than that of a prior art 12-Cr heat-resisting steel. A turbine component formed of the heat-resisting steel of the present invention has enough strength for use at a high temperature of 600.degree. to 650.degree. C.

Abstract: Disclosed is a sputtering target which comprises a single block composed of one or more of metals prepared by a melting process or an alloy thereof; a combined block of the plural single blocks; or a combined block of the single blocks and silicon blocks; an average size of the crystal grains of the metal or the alloy being between 1 .mu.m and 1 mm.

Abstract: An indirectly heated cathode structure for electron tubes comprises a cathode supporting sleeve, an electron emission section fitted on a part of the supporting sleeve, and a heater arranged inside the supporting sleeve, the supporting sleeve being an alloy containing niobium as a main component, more particularly more than 85 weight % of niobium. As an additive, at least one metal selected from titanium, zirconium, hafnium, vanadium, tantalum, molybdenum and tungsten is used.