Abstract: A wafer hanger has a rod member and a supporting member. The rod member is inserted into respective notches formed in semiconductor wafers, and then placed on the supporting member. The wafer hanger holding the wafers is put into a furnace for heat treatment of the wafers. Since the wafers are hung from the rod member, plastic deformation due to the gravity of the wafers is not caused in the wafers.

Abstract: A wafer hanger has a rod member and a supporting member. The rod member is inserted into respective notches formed in semiconductor wafers, and then placed on the supporting member. The wafer hanger holding the wafers is put into a furnace for heat treatment of the wafers. Since the wafers are hung from the rod member, plastic deformation due to the gravity of the wafers is not caused in the wafers.

Abstract: In order to solder a silicon substrate on a supporting plate, an aluminum thin plate is inserted therebetween as a solder metal layer. An assembly thus obtained is heated to 580.degree. C. which is higher than the recrystallization temperature 264.degree. C. of the aluminum thin plate but is lower than the eutectic reaction temperature 585.degree. C. of the interface between the silicon substrate and the aluminum thin plate. After the assembly is held at 580.degree. for twenty minutes, the assembly is further heated to 610.degree. C. in order to melt the aluminum thin plate into which silicon atoms are diffused. The aluminum thin plate changes uniformly to an eutectic layer consisting of silicon and aluminum, whereby the silicon substrate is soldered on the supporting plate.

Abstract: A wafer hanger has a rod member and a supporting member. The rod member is inserted into respective notches formed in semiconductor wafers, and then placed on the supporting member. The wafer hanger holding the wafers is put into a furnace for heat treatment of the wafers. Since the wafers are hung from the rod member, plastic deformation due to the gravity of the wafers is not caused in the wafers.

Abstract: A low-inductance semiconductor apparatus has a flat-topped base which support a semiconductor element. A cathode whose height is roughly on the order of its diameter sits atop the semiconductor element. The cathode has a flat upper surface with a threaded hole formed in the center thereof into which a lead with a threaded end can be screwed. The inside of the semiconductor apparatus is sealed by a cap which is secured in an airtight manner to the cathode and to a casing which is secured to the top surface of the base. The base can be either flat-bottomed or studded.

Abstract: In a semicondur device comprising a semiconductor element, a pair of electrodes provided on the opposite sides of the semiconductor element, and a cylindrical member provided to surround the semiconductor element and to be in engagement with the pair of electrodes, each of the electrodes has a thread portion on its outer perphery, and the cylindrical member has a thread portion on its inner periheral surface screwed onto each of the thread portions of the electrodes, thereby to provide a hermetic seal for the semiconductor element.

Abstract: A method of manufacturing the present invention relates to a semiconductor device by providing a projection formed by pressing the side wall portion of a metal cylindrical body from the outside toward the inside of the cylindrical body and engaging the outer peripheral edge of the upper surface of the cylindrical elastic member contained in the cylindrical body with the projection.

Abstract: In a .[.semicondur.]. .Iadd.semiconductor .Iaddend.device comprising a semiconductor element, a pair of electrodes provided on the opposite sides of the semiconductor element, and a cylindrical member provided to surround the semiconductor element and to be in engagement with the pair of electrodes, each of the electrodes has a thread portion on its outer perphery, and the cylindrical member has a thread portion on its inner peripheral surface screwed onto each of the thread portions of the electrodes, thereby to provide a hermetic seal for the semiconductor element.