Patents by Inventor Mituo Osada

Mituo Osada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Substrate for semiconductor apparatus
    Patent number: 5708959
    Abstract: This invention relates to a substrate for semiconductor apparatus loading a semiconductor chip in integrated circuit apparatus and is characterized in that a sintered compact containing copper of 2 to 30 wt. % in tungsten and/or molybdenum is used as the substrate having the heat radiation capable of efficiently radiating heat developed from the loaded semiconductor chip and thermal expansion coefficient similar to those of semiconductor chip and other enclosure material except for the substrate.
    Type: Grant
    Filed: April 22, 1996
    Date of Patent: January 13, 1998
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Mituo Osada, Yoshinari Amano, Nobuo Ogasa, Akira Ohtsuka
  • Substrate for semiconductor apparatus
    Patent number: 5563101
    Abstract: This invention relates to a substrate for semiconductor apparatus loading a semiconductor chip in an integrated circuit apparatus and is characterized in that a sintered compact containing copper of 2 to 30 wt. % in tungsten and/or molybdenum is used as the substrate having the heat radiation capable of efficiently radiating heat developed from the loaded semiconductor chip and thermal expansion coefficient similar to those of semiconductor chip and other enclosure material except for the substrate.
    Type: Grant
    Filed: January 4, 1995
    Date of Patent: October 8, 1996
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Mituo Osada, Yoshinari Amano, Nobuo Ogasa, Akira Ohtsuka
  • Substrate for semiconductor apparatus
    Patent number: 5525428
    Abstract: This invention relates to a substrate for semiconductor apparatus loading a semiconductor chip in an integrated circuit apparatus and is characterized in that a sintered compact containing copper of 2 to 30 wt. % in tungsten and/or molybdenum is used as the substrate having the heat radiation capable of efficiently radiating heat developed from the loaded semiconductor chip and thermal expansion coefficient similar to those of semiconductor chip and other enclosure material except for the substrate.
    Type: Grant
    Filed: January 4, 1995
    Date of Patent: June 11, 1996
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Mituo Osada, Yoshinari Amano, Nobuo Ogasa, Akira Ohtsuka
  • Substrate for semiconductor apparatus
    Patent number: 5409864
    Abstract: This invention relates to a substrate for mounting a semiconductor chip in an integrated circuit wherein a sintered compact containing copper at 2 to 30 wt. % and tungsten and/or molybdenum is employed as a substrate which efficiently radiates heat developed from the semiconductor chip mounted thereon and said substrate having a thermal expansion coefficient similar to those of semiconductor chip and other enclosure materials.
    Type: Grant
    Filed: August 2, 1994
    Date of Patent: April 25, 1995
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Mituo Osada, Yoshinari Amano, Nobuo Ogasa, Akira Ohtsuka
  • Substrate for semiconductor apparatus
    Patent number: 5099310
    Abstract: This invention relates to a substrate for semiconductor apparatus loading a semiconductor chip in integrated circuit apparatus and is characterized in that a sintered compact containing copper of 2 to 30 wt. % in tungsten and/or molybdenum is used as the substrate having the heat radiation capable of efficiently radiating heat developed from the loaded semiconductor chip and thermal expansion coefficient similar to those of semiconductor chip and other enclosure material except for the substrate.
    Type: Grant
    Filed: January 17, 1989
    Date of Patent: March 24, 1992
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Mituo Osada, Yoshinari Amano, Nobuo Ogasa, Akira Ohtusuka
  • Substrate for semiconductor apparatus having a composite material
    Patent number: 5086333
    Abstract: This invention relates to a substrate for mounting a semiconductor chip in an integrated circuit wherein a sintered compact containing copper at 2 to 30 wt. % and tungsten and/or molybdenum is employed as a substrate which efficiently radiates heat developed from the semiconductor chip mounted thereon and said substrate having a thermal expansion coefficient similar to those of semiconductor chip and other enclosure materials.
    Type: Grant
    Filed: July 13, 1989
    Date of Patent: February 4, 1992
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Mituo Osada, Yoshinari Amano, Nobuo Ogasa, Akira Ohtsuka