Abstract: An exposure apparatus includes a measurement system which performs exposure control measurement using a first mark arranged on an original stage and a second mark arranged on a substrate stage, and a control unit which can set, when the measurement system performs the measurement in order to expose a substrate to light under a certain illumination condition, an illumination condition different from the certain illumination condition.

Abstract: An exposure apparatus, which equipped with a projection optical system that is configured to project a pattern of an original onto a substrate, includes an interferometer configured to measure a wavefront in a first direction and a wavefront in a second direction of light passed through the projection optical system; a focus detecting unit configured to detect focus positions in the first and second directions of the projection optical system; and a calculating unit configured to calculate wavefront aberration of the projection optical system on the basis of the measurement result of the interferometer and the detection result of the focus detecting unit.

Abstract: An exposure apparatus includes a measurement system which performs exposure control measurement using a first mark arranged on an original stage and a second mark arranged on a substrate stage, and a control unit which can set, when the measurement system performs the measurement in order to expose a substrate to light under a certain illumination condition, an illumination condition different from the certain illumination condition.

Abstract: An exposure apparatus, which equipped with a projection optical system that is configured to project a pattern of an original onto a substrate, includes an interferometer configured to measure a wavefront in a first direction and a wavefront in a second direction of light passed through the projection optical system; a focus detecting unit configured to detect focus positions in the first and second directions of the projection optical system; and a calculating unit configured to calculate wavefront aberration of the projection optical system on the basis of the measurement result of the interferometer and the detection result of the focus detecting unit.

Abstract: Provided is an exposure apparatus including a projection optical system for projecting an exposure pattern onto an object to be exposed, a measurement device for measuring an optical performance of the projection optical system by guiding light to the projection optical system through a measurement pattern to detect interference fringes formed by the light emitted from the projection optical system, and an adjustment portion for adjusting a numerical aperture of the light that illuminates the measurement pattern, in which the adjustment portion adjusts the numerical aperture so that the visibility of the interference fringes V, which is defined as V=(Imax?Imin)/(Imax+Imin), is equal to or more than 0.3, where Imax represents the maximum amount of light of the interference fringes, and Imin represents the minimum amount of light of the interference fringes, when the measurement device measures an optical performance of the projection optical system.