Patents by Inventor Miyai Yoichi

Miyai Yoichi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and method of manufacturing the same
    Patent number: 5635740
    Abstract: A semiconductor storage device is disclosed herein. A semiconductor substrate 1 has a first conductive type. A first groove is provided in this semiconductor substrate 1. A second groove 20, which is deeper than the first groove, is provided so as to be stacked within the first groove. A MOS transistor which include first and second regions 22 and 23 is connected to an accumulating electrode 133. The accumulating electrode 133 is disposed in the second groove 20 and separated from it by an insulating film 124. An electrode 143 is provided on the accumulating electrode 133 and separated therefrom by a capacitor insulating film 135. The electrode 143 is buried in the first and second grooves.
    Type: Grant
    Filed: April 20, 1995
    Date of Patent: June 3, 1997
    Assignee: Texas Instruments Incorporated
    Inventors: Nagata Toshiyuki, Yoshida Hiroyuki, Niuya Takayuki, Ogata Yoshihiro, Boku Katsushi, Miyai Yoichi