Patents by Inventor Miyako Nakajima

Miyako Nakajima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Thin film transistor and method for manufacturing the same
    Patent number: 8956934
    Abstract: An object is to provide a thin film transistor with small off current, large on current, and high field-effect mobility. A silicon nitride layer and a silicon oxide layer which is formed by oxidizing the silicon nitride layer are stacked as a gate insulating layer, and crystals grow from an interface of the silicon oxide layer of the gate insulating layer to form a microcrystalline semiconductor layer; thus, an inverted staggered thin film transistor is manufactured. Since crystals grow from the gate insulating layer, the thin film transistor can have a high crystallinity, large on current, and high field-effect mobility. In addition, a buffer layer is provided to reduce off current.
    Type: Grant
    Filed: December 6, 2012
    Date of Patent: February 17, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Miyako Nakajima, Hidekazu Miyairi, Toshiyuki Isa, Erika Kato, Mitsuhiro Ichijo, Kazutaka Kuriki, Tomokazu Yokoi
  • Thin film transistor and method for manufacturing the same
    Patent number: 8344378
    Abstract: An object is to provide a thin film transistor with small off current, large on current, and high field-effect mobility. A silicon nitride layer and a silicon oxide layer which is formed by oxidizing the silicon nitride layer are stacked as a gate insulating layer, and crystals grow from an interface of the silicon oxide layer of the gate insulating layer to form a microcrystalline semiconductor layer; thus, an inverted staggered thin film transistor is manufactured. Since crystals grow from the gate insulating layer, the thin film transistor can have a high crystallinity, large on current, and high field-effect mobility. In addition, a buffer layer is provided to reduce off current.
    Type: Grant
    Filed: June 22, 2010
    Date of Patent: January 1, 2013
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Miyako Nakajima, Hidekazu Miyairi, Toshiyuki Isa, Erika Kato, Mitsuhiro Ichijo, Kazutaka Kuriki, Tomokazu Yokoi
  • THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20100327281
    Abstract: An object is to provide a thin film transistor with small off current, large on current, and high field-effect mobility. A silicon nitride layer and a silicon oxide layer which is formed by oxidizing the silicon nitride layer are stacked as a gate insulating layer, and crystals grow from an interface of the silicon oxide layer of the gate insulating layer to form a microcrystalline semiconductor layer; thus, an inverted staggered thin film transistor is manufactured. Since crystals grow from the gate insulating layer, the thin film transistor can have a high crystallinity, large on current, and high field-effect mobility. In addition, a buffer layer is provided to reduce off current.
    Type: Application
    Filed: June 22, 2010
    Publication date: December 30, 2010
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Miyako NAKAJIMA, Hidekazu MIYAIRI, Toshiyuki ISA, Erika KATO, Mitsuhiro ICHIJO, Kazutaka KURIKI, Tomokazu YOKOI