Abstract: A semiconductor device according to an embodiment includes: a substrate including a plurality of through holes provided at predetermined intervals along a first direction in a substrate surface and along a second direction intersecting the first direction in the substrate surface; an insulating layer provided on the substrate, the insulating layer being penetrated by the through holes; a plurality of first electrodes provided on the insulating layer, the first electrodes being adjacent to the respective through holes in the first direction; a plurality of second electrodes provided on the insulating layer, the second electrodes being adjacent to the respective through holes in the first direction, the second electrodes being provided to face the first electrodes, the second electrodes being held at a predetermined potential; and a wiring layer provided on the insulating layer, the wiring layer electrically connecting the adjacent second electrodes.

Abstract: A semiconductor device according to an embodiment includes: a substrate including a plurality of through holes provided at predetermined intervals along a first direction in a substrate surface and along a second direction intersecting the first direction in the substrate surface; an insulating layer provided on the substrate, the insulating layer being penetrated by the through holes; a plurality of first electrodes provided on the insulating layer, the first electrodes being adjacent to the respective through holes in the first direction; a plurality of second electrodes provided on the insulating layer, the second electrodes being adjacent to the respective through holes in the first direction, the second electrodes being provided to face the first electrodes, the second electrodes being held at a predetermined potential; and a wiring layer provided on the insulating layer, the wiring layer electrically connecting the adjacent second electrodes.

Abstract: According to one embodiment, the p-side electrode is provided on the second semiconductor layer. The insulating film is provided on the p-side electrode. The n-side electrode includes a first portion, a second portion, and a third portion. The first portion is provided on a side face of the first semiconductor layer. The second portion is provided in the first n-side region. The third portion overlaps the p-side electrode via the insulating film and connects the first portion and the second portion to each other.

Abstract: The semiconductor layer has a first surface, a second surface provided on opposite side from the first surface, and a third surface provided on the opposite side from the first surface with a step difference with respect to the second surface. The semiconductor layer includes a light emitting layer between the first surface and the third surface. The first electrode is in contact with the second surface. The second electrode is provided in a plane of the third surface. The second electrode includes a contact part in contact with the third surface and an end part not in contact with the third surface. The second electrode contains silver. The insulating film is provided between the end part of the second electrode and the third surface. A semiconductor light emitting device having a high light extraction efficiency is provided.

Abstract: The semiconductor layer has a first surface, a second surface provided on opposite side from the first surface, and a third surface provided on the opposite side from the first surface with a step difference with respect to the second surface. The semiconductor layer includes a light emitting layer between the first surface and the third surface. The first electrode is in contact with the second surface. The second electrode is provided in a plane of the third surface. The second electrode includes a contact part in contact with the third surface and an end part not in contact with the third surface. The second electrode contains silver. The insulating film is provided between the end part of the second electrode and the third surface. A semiconductor light emitting device having a high light extraction efficiency is provided.

Abstract: According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a sealing member configured to cover a lower surface of the semiconductor layer and a side surface of the semiconductor layer to protrude to be higher than an upper surface of the semiconductor layer at a side of the semiconductor layer, a fluorescer layer provided above the semiconductor layer and the sealing member, and an insulating film provided between the sealing member and the semiconductor layer and between the sealing member and the fluorescer layer. A corner of a protruding portion of the sealing member is rounded.

Abstract: According to one embodiment, a semiconductor light-emitting device includes a semiconductor layer including a light emitting layer; and a phosphor layer provided on the semiconductor layer. The phosphor layer includes a plurality of phosphors, ?0.05<A×(AR)+B×(Np)+C<0.05 being satisfied for ?0.149055?(3×0.011797)?constant A??0.149055+(3×0.011797), ?0.000192?(3×0.00002461)?constant B??0.000192+(3×0.00002461), and 0.0818492?(3×0.005708)?constant C?0.0818492+(3×0.005708). AR is a ratio of a thickness of the phosphor layer to a width of the phosphor layer, and Np is a number of the plurality of phosphors.

Abstract: According to one embodiment, the n-side electrode has a corner and a plurality of straight portions. The plurality of straight portions extends in different directions. The corner connects the plurality of straight portions. A first insulating film is provided between the semiconductor layer and the corner of the n-side electrode. The corner is not in contact with the semiconductor layer. The straight portions of the n-side electrode are in contact with the semiconductor layer.

Abstract: According to one embodiment, the p-side electrode is provided on the second semiconductor layer. The insulating film is provided on the p-side electrode. The n-side electrode includes a first portion, a second portion, and a third portion. The first portion is provided on a side face of the first semiconductor layer. The second portion is provided in the first n-side region. The third portion overlaps the p-side electrode via the insulating film and connects the first portion and the second portion to each other.

Abstract: According to one embodiment, the p-side electrode is provided on the second semiconductor layer. The insulating film is provided on the p-side electrode. The n-side electrode includes a first portion, a second portion, and a third portion. The first portion is provided on a side face of the first semiconductor layer. The second portion is provided in the first n-side region. The third portion overlaps the p-side electrode via the insulating film and connects the first portion and the second portion to each other.

Abstract: According to one embodiment, a semiconductor light-emitting device includes a semiconductor layer including a light emitting layer; and a phosphor layer provided on the semiconductor layer. The phosphor layer includes a plurality of phosphors, ?0.05<A×(AR)+B×(Np)+C<0.05 being satisfied for ?0.149055?(3×0.011797)?constant A??0.149055+(3×0.011797), ?0.000192?(3×0.00002461)?constant B??0.000192+(3×0.00002461), and 0.0818492?(3×0.005708)?constant C?0.0818492+(3×0.005708). AR is a ratio of a thickness of the phosphor layer to a width of the phosphor layer, and Np is a number of the plurality of phosphors.

Abstract: According to one embodiment, a semiconductor light-emitting device includes a semiconductor layer including a first semiconductor layer, a second semiconductor layer, a light emitting layer, a first surface, and a second surface; an n-side electrode including a first n-side electrode and a second n-side electrode; a first contact unit; a second contact unit; an n-side interconnect unit; a p-side electrode; and an insulating film. The insulating film includes a first insulating portion, a second insulating portion, a third insulating portion, and a fourth insulating portion.

Abstract: According to one embodiment, a semiconductor light-emitting device includes a semiconductor layer including a first semiconductor layer, a second semiconductor layer, a light emitting layer, a first surface, and a second surface; an n-side electrode including a first n-side electrode and a second n-side electrode; a first contact unit; a second contact unit; an n-side interconnect unit; a p-side electrode; and an insulating film. The insulating film includes a first insulating portion, a second insulating portion, a third insulating portion, and a fourth insulating portion.

Abstract: A semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first interconnection section, a second interconnection section, and a varistor film. The semiconductor layer includes a light emitting layer. The first electrode is provided in a emitting region on the second surface. The second electrode is provided in a non-emitting region on the second surface. The first interconnection section is provided on the first electrode and electrically connected to the first electrode. The second interconnection section is provided on the second electrode and on the first electrode and electrically connected to the second electrode. The varistor film is provided in contact with the first electrode and the second interconnection section between the first electrode and the second interconnection section.

Abstract: According to one embodiment, the p-side electrode is provided on the second semiconductor layer. The insulating film is provided on the p-side electrode. The n-side electrode includes a first portion, a second portion, and a third portion. The first portion is provided on a side face of the first semiconductor layer. The second portion is provided in the first n-side region. The third portion overlaps the p-side electrode via the insulating film and connects the first portion and the second portion to each other.

Abstract: According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode, an insulating film, a p-side interconnection section, an n-side interconnection section, a phosphor layer, and a metal film. The semiconductor layer is formed on a substrate which is then removed. The p-side interconnection section is provided on the insulating film and electrically connected to the p-side electrode. The n-side interconnection section is provided on the insulating film and electrically connected to the n-side electrode. The phosphor layer is provided on the first surface and includes a step portion continued to the side surface of the semiconductor layer. The metal film is provided on the side surface of the semiconductor layer and a side surface of the step portion of the phosphor layer.

Abstract: According to one embodiment, a light emitting device includes a first base section, a light emitting section, and a first wiring section. The light emitting section is embedded on a first surface side of the first base section. The light emitting section includes a light emitting element. The first wiring section is provided on the first surface of the first base section. The first wiring section is connected to the light emitting element.

Abstract: According to one embodiment, a semiconductor light-emitting device includes a light-emitting element including a light-emitting layer; a first transparent body provided on the light-emitting element; a phosphor scattered in the first transparent body and emitting a light of a different wavelength from a radiated light of the light-emitting layer; and a second transparent body including a first transparent portion and a second transparent portion. The first transparent portion is surrounded by the first transparent body in an area on the light-emitting element. The second transparent portion is provided on the first transparent body and the first transparent portion. The second transparent portion includes an inclined portion provided on the first transparent portion. The inclined portion is inclined with respect to a first direction orthogonal to the light-emitting layer.

Abstract: According to one embodiment, a semiconductor light emitting device includes not less than three chips. Each of the chips includes a semiconductor layer having a first face, a second face formed on a side opposite to the first face, and a light emitting layer, a p-side electrode, and an n-side electrode. The chips include a central chip centrally positioned in a plan view, and at least two peripheral chips arranged symmetrically to each other sandwiching the central chip in the plan view. A thickness of the fluorescent body layer on the first face is same among the peripheral chips, and the fluorescent body layer on the first face of the central chip and the fluorescent body layers on the first faces of the peripheral chips have thicknesses different from each other.

Abstract: According to one embodiment, a semiconductor light emitting device includes a light emitting element, a phosphor layer, and a fluorescent reflection film. The phosphor layer has a transparent medium, a phosphor dispersed in the transparent medium, and a particle dispersed in the transparent medium. The phosphor is excited by the excitation light so as to emit a fluorescence. The particle is a magnitude of not more than 1/10 a wavelength of the excitation light. The particle has a different refractive index from a refractive index of the transparent medium. The fluorescent reflection film is provided between the light emitting element and the phosphor layer. The fluorescent reflection film has a higher reflectance with respect to a fluorescent wavelength of the phosphor, than a reflectance with respect to the wavelength of the excitation lights.