Abstract: A polishing pad forms a planar surface on glass, semiconductors, dielectric material/metal composites and integrated circuits, as well as a polishing apparatus where it is difficult for the surface of the substrate to be scratched, the state of polishing can be accurately measured optically during polishing, and whether or not the entire surface of the workpiece is uniformly polished can be measured.

Abstract: A polishing pad which comprises a laminate of an abrasive layer with a cushioning layer. The abrasive layer has a Microrubber A hardness of 75 degrees or higher and a thickness of 0.8-3.0 mm. The cushioning layer comprises an unfoamed elastomer and has a thickness of 0.05-1.5 mm. The abrasive layer has at least two kinds of grooves formed in the surface. One of the two kinds of grooves is first grooves and the other is second grooves. The first grooves each has a groove width of 0.5-1.2 mm, and has a groove pitch of 7.5-50 mm. The second grooves each has a groove width of 1.5-3 mm, and has a groove pitch of 20-50 mm. Each of the first grooves and each of the second grooves are open to side edge faces of the abrasive layer.

Abstract: A polishing pad forms a planar surface on glass, semiconductors, dielectric material/metal composites and integrated circuits, as well as a polishing apparatus where it is difficult for the surface of the substrate to be scratched, the state of polishing can be accurately measured optically during polishing, and whether or not the entire surface of the workpiece is uniformly polished can be measured.