Abstract: According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode, a p-side metal pillar, an n-side metal pillar, and an insulator. The semiconductor layer includes a first surface, a second surface opposite to the first surface, and a light emitting layer. The p-side metal pillar includes a p-side external terminal. The n-side metal pillar includes an n-side external terminal. At least one selected from an area and a planar configuration of the p-side external terminal is different from at least one selected from an area and a planar configuration of the n-side external terminal.

Abstract: According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first insulating layer, a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar and a second insulating layer. The semiconductor layer includes a first major surface, a second major surface opposite to the first major surface and a light emitting layer. An edge of a part of the first interconnect layer is exposed laterally from the first insulating layer and the second insulating layer.

Abstract: According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode, a p-side metal pillar, an n-side metal pillar, and an insulator. The semiconductor layer includes a first surface, a second surface opposite to the first surface, and a light emitting layer. The p-side metal pillar includes a p-side external terminal. The n-side metal pillar includes an n-side external terminal. At least one selected from an area and a planar configuration of the p-side external terminal is different from at least one selected from an area and a planar configuration of the n-side external terminal.

Abstract: According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode, a p-side metal pillar, an n-side metal pillar, and an insulator. The semiconductor layer includes a first surface, a second surface opposite to the first surface, and a light emitting layer. The p-side metal pillar includes a p-side external terminal. The n-side metal pillar includes an n-side external terminal. At least one selected from an area and a planar configuration of the p-side external terminal is different from at least one selected from an area and a planar configuration of the n-side external terminal.

Abstract: According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first insulating layer, a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar, and a second insulating layer. The semiconductor layer includes a first major surface, a second major surface opposite to the first major surface, and a light emitting layer. The first electrode is provided on a region including the light emitting layer on the second major surface. The second electrode is provided on the second major surface and interposed in the first electrode in a planar view.

Abstract: According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode, a p-side metal pillar, an n-side metal pillar, and an insulator. The semiconductor layer includes a first surface, a second surface opposite to the first surface, and a light emitting layer. The p-side metal pillar includes a p-side external terminal. The n-side metal pillar includes an n-side external terminal. At least one selected from an area and a planar configuration of the p-side external terminal is different from at least one selected from an area and a planar configuration of the n-side external terminal.

Abstract: According to one embodiment, a method for manufacturing a semiconductor light emitting device is disclosed. The method can include forming a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar, a second insulating layer, a transparent material and a phosphor layer. The transparent material is formed on the first major surface of a semiconductor layer selected from the plurality of semiconductor layers on the basis of an emission spectrum of a light obtained from the first major surface side. The transparent material transmits the light. The phosphor layer is formed on the transparent material and the first major surface of the plurality of the semiconductor layers.

Abstract: According to one embodiment, a method for manufacturing a semiconductor light emitting device is disclosed. The method can include forming a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar, a second insulating layer, a transparent material and a phosphor layer. The transparent material is formed on the first major surface of a semiconductor layer selected from the plurality of semiconductor layers on the basis of an emission spectrum of a light obtained from the first major surface side. The transparent material transmits the light. The phosphor layer is formed on the transparent material and the first major surface of the plurality of the semiconductor layers.

Abstract: According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first insulating layer, a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar, and a second insulating layer. The semiconductor layer includes a first major surface, a second major surface opposite to the first major surface, and a light emitting layer. The first electrode is provided on a region including the light emitting layer on the second major surface. The second electrode is provided on the second major surface and interposed in the first electrode in a planar view.

Abstract: According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first insulating layer, a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar and a second insulating layer. The semiconductor layer includes a first major surface, a second major surface opposite to the first major surface and a light emitting layer. An edge of a part of the first interconnect layer is exposed laterally from the first insulating layer and the second insulating layer.