Patents by Inventor Miyuki Umetsu

Miyuki Umetsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor memory device and method of fabricating the same
    Patent number: 7453116
    Abstract: A silicon nitride film for storing electric charge is formed on a semiconductor substrate while placing a tunnel oxide film in between, and the silicon nitride film is then subjected to hydrogen plasma treatment so as to effectively erase unnecessary charge stored therein during various process steps in fabrication of the semiconductor memory device, to thereby stabilize the threshold voltage (Vth) of the semiconductor memory device.
    Type: Grant
    Filed: March 7, 2006
    Date of Patent: November 18, 2008
    Assignee: Spansion LLC
    Inventors: Hideo Takagi, Takayuki Enda, Miyuki Umetsu, Tsukasa Takamatsu
  • Semiconductor memory device and method of fabricating the same
    Publication number: 20060145242
    Abstract: A silicon nitride film for storing electric charge is formed on a semiconductor substrate while placing a tunnel oxide film in between, and the silicon nitride film is then subjected to hydrogen plasma treatment so as to effectively erase unnecessary charge stored therein during various process steps in fabrication of the semiconductor memory device, to thereby stabilize the threshold voltage (Vth) of the semiconductor memory device.
    Type: Application
    Filed: March 7, 2006
    Publication date: July 6, 2006
    Applicant: FASL LLC
    Inventors: Hideo Takagi, Takayuki Enda, Miyuki Umetsu, Tsukasa Takamatsu
  • Semiconductor memory device and method of fabricating the same
    Patent number: 7037780
    Abstract: A silicon nitride film for storing electric charge is formed on a semiconductor substrate while placing a tunnel oxide film in between, and the silicon nitride film is then subjected to hydrogen plasma treatment so as to effectively erase unnecessary charge stored therein during various process steps in fabrication of the semiconductor memory device, to thereby stabilize the threshold voltage (Vth) of the semiconductor memory device.
    Type: Grant
    Filed: November 18, 2003
    Date of Patent: May 2, 2006
    Assignee: FASL LLC
    Inventors: Hideo Takagi, Takayuki Enda, Miyuki Umetsu, Tsukasa Takamatsu
  • Semiconductor memory device and method of fabricating the same
    Publication number: 20040110390
    Abstract: A silicon nitride film for storing electric charge is formed on a semiconductor substrate while placing a tunnel oxide film in between, and the silicon nitride film is then subjected to hydrogen plasma treatment so as to effectively erase unnecessary charge stored therein during various process steps in fabrication of the semiconductor memory device, to thereby stabilize the threshold voltage (Vth) of the semiconductor memory device.
    Type: Application
    Filed: November 18, 2003
    Publication date: June 10, 2004
    Applicant: FASL LLC
    Inventors: Hideo Takagi, Takayuki Enda, Miyuki Umetsu, Tsukasa Takamatsu