Abstract: A ceramic electronic component 100 includes a ceramic body 1 in which internal electrodes containing a metal component is buried, and a pair of terminal electrodes 3 provided to cover both end surfaces 11 of the ceramic body to which the internal electrodes are exposed. Each of the terminal electrodes 3 has a first electrode layer and a second electrode layer formed by baking a conductive green sheet from a side close to the ceramic body 1. The second electrode layer contains the metal component diffused from the internal electrodes.

Abstract: An array-type ceramic electronic component C1 includes a ceramic body 1 in which internal electrodes are buried and a plurality of terminal electrodes 11 to 16 formed on the ceramic body 1. The terminal electrodes 11 to 16 have electrode layers formed by baking a conductive green sheet.

Abstract: A varistor 1 comprises a varistor element 10, a pair of external electrodes 30a, 30b on one main side of the varistor element 10 and a resistor 60 on the same main side, wherein the resistor 60 is formed so as to connect the pair of external electrodes 30a, 30b. The varistor element 10 contains zinc oxide as the main component and Ca oxides, Si oxides and rare earth metal oxides as accessory components, wherein the proportion X of the calcium oxides in terms of calcium atoms is 2-80 atomic percent with respect to 100 mol of the main component and the proportion Y of the silicon oxides in terms of silicon atoms is 1-40 atomic percent with respect to 100 mol of the main component, X/Y satisfying formula (1) below, and the external electrodes and resistor contain oxides other than bismuth oxide and copper oxide 1?X/Y<3??(1).

Abstract: The present invention provides a terminal structure 14 including a terminal 12 having a conductor 40 containing at least one metal selected from the group consisting of gold, silver, and copper, a first layer containing phosphorus and nickel disposed on the conductor 40, and a second layer having a nickel/phosphorus atomic ratio smaller than that of the first layer and containing Ni3P disposed on the first layer; and solder 70 disposed on the second layer of the terminal 12, while the second layer has a thickness of at least 0.35 ?m; and a module substrate 100 having the terminal structure.

Abstract: The present invention provides a plating film 50 including a nickel plating layer containing phosphorus and a gold plating layer formed on the nickel plating layer, wherein the nickel plating layer has a phosphorus content of 11 to 16 mass %, and wherein (3×?×100)/X is 10 or less, where X and ? are the average value and standard deviation of the phosphorus content in a surface of the nickel plating layer on the gold plating layer side, respectively; and a module substrate 100 having the plating film 50.

Abstract: A ceramic electronic part 100 having a chip element 1 having internal electrodes embedded therein, and terminal electrodes 3 that cover the end faces 11 of the chip element 1 having an exposed internal electrode and parts of the side faces 13,15 orthogonal to the end faces 11, and that are electrically connected to the internal electrodes, wherein the terminal electrodes 3 include a first electrode layer and a second electrode layer with a lower glass component content than the first electrode layer, in that order from the chip element 1 side, the second electrode layer being formed covering part of the first electrode layer on the side faces 13,15.

Abstract: A production method of a dielectric ceramic composition comprising a main component including a compound having a perovskite-type crystal structure expressed by a composition formula (Ba1-xCax) (Ti1-yZry)O3 (note that 0?x?0.2, 0?y?0.2), and a fourth subcomponent including an oxide of R (note that R is at least one selected from Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu); comprising steps of obtaining a post-reaction material by bringing a material of the main component to react in advance with a part of a material of the fourth subcomponent to be included in the dielectric ceramic composition, and adding rest of material of the fourth subcomponent to be included in the dielectric ceramic composition into the post-reaction material. According to the present invention, both of a dielectric ceramic composition capable of improving the specific permittivity and a temperature characteristic of capacitance can be preferable, and the production method can be provided.

Abstract: A transcoder calculates a reference conversion factor on the basis of a ratio between a total target bit rate of a whole second stream and an total input bit rate of a whole first stream and calculates a coefficient of variation from the total target bit rate of the whole second stream and an average output bit rate of a converted second stream in the N period. Next, a quantization step conversion factor in the next (N+1) period is calculated by adding the coefficient of variation to the reference conversion factor. Then, a quantization step value of a second stream in the (N+1) period is calculated by multiplying a quantization step value of a first stream in the (N+1) period by the quantization step conversion factor.

Abstract: A production method of a dielectric ceramic composition comprising a main component including barium titanate expressed by a composition formula of BamTiO2+m, wherein “m” satisfies 0.990<m<1.010, a fourth subcomponent including an oxide of R (note that R is at least one selected from Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu), and other subcomponent including at least BaO; comprising steps of preparing a post-reaction material by bringing a material of said main component to react in advance with at least a part of a material of said fourth subcomponent, wherein, when an amount of BaO included in said other subcomponent is n mole with respect to 100 moles of said main component, and said main component and said BaO are expressed by a composition formula of Bam+n/100TiO2+m+n/100, wherein “m” and “n” satisfy 0.994<m+n/100<1.

Abstract: A production method of a dielectric ceramic composition comprising a main component including at least one selected from BaTiO3, BaCaTiO3, BaTiZrO3 and BaCaTiZrO3, and a fourth subcomponent including rare earth oxide; comprising steps of dividing a material of the main component to a first main component material and a second main component material, obtaining a post-reaction material by making the material of the first main component react in advance with a part of the fourth subcomponent material, and adding the material of the second main component and rest of the fourth subcomponent material into the post-reaction material; wherein, when number of moles of the first main component is n1 and number of moles of the second main component is n2, a ratio is 0.5?n1/(n1+n2)?1: by which preferable characteristic can be obtained even when dielectric layers are made thin.

Abstract: A production method of a dielectric ceramic composition, comprising a main component comprised of barium titanate, a fourth subcomponent comprised of an oxide of R1 (note that R1 is at least one kind selected from a first element group composed of rare earth elements having a value of effective ionic radius for coordination number 9 of less than 108 pm) and a fifth sub component comprised of an oxide of R2 (note that R2 is at least one kind selected from a second element group composed of rare earth elements having a value of effective ionic radius for coordination number 9 of 108 pm to 113 pm); comprising the steps of obtaining a post-reaction material by bringing the main component material reacting with a part of the fourth subcomponent material and/or a part of the fifth subcomponent material, and adding remaining materials of the fourth subcomponent and the fifth subcomponent to be included in the dielectric ceramic composition to the post-reaction material; wherein a ratio M1/M2 of the number of moles M

Abstract: A scene change detection part detects a scene change based on a characteristic amount of an input image. A target code amount setting part executes correction by a correction code amount on a target code amount previously set for suppressing variation of an output code amount around the time of scene change. A quantization step value setting part sets a quantization step value based on the target code amount. That is to say, a transcoder 1 does not detect a scene change by previously reading an input image or by detecting variation of the output code amount.

Abstract: A category setting part sets a type of a decoded image based on characteristics of the decoded image which are fineness of the decoded image and an intensity of movement of the decoded image. A code amount setting part sets a target code amount of an output image based on the type of the decoded image. A quantization step value setting part sets a quantization step value of the output image based on the target code amount of the output image. A transcoder can set the target code amount of the output image depending on fineness of the decoded image. The transcoder can distribute the target code amount of the output image to a reference image and a predicted image depending on the intensity of movement of the decoded image.

Abstract: A varistor 1 comprises a varistor element 10, a pair of external electrodes 30a, 30b on one main side of the varistor element 10 and a resistor 60 on the same main side, wherein the resistor 60 is formed so as to connect the pair of external electrodes 30a, 30b. The varistor element 10 contains zinc oxide as the main component and Ca oxides, Si oxides and rare earth metal oxides as accessory components, wherein the proportion X of the calcium oxides in terms of calcium atoms is 2-80 atomic percent with respect to 100 mol of the main component and the proportion Y of the silicon oxides in terms of silicon atoms is 1-40 atomic percent with respect to 100 mol of the main component, X/Y satisfying formula (1) below, and the external electrodes and resistor contain oxides other than bismuth oxide and copper oxide.

Abstract: A transcoder calculates a reference conversion factor on the basis of a ratio between a total target bit rate of a whole second stream and an total input bit rate of a whole first stream and calculates a coefficient of variation from the total target bit rate of the whole second stream and an average output bit rate of a converted second stream in the N period. Next, a quantization step conversion factor in the next (N+1) period is calculated by adding the coefficient of variation to the reference conversion factor. Then, a quantization step value of a second stream in the (N+1) period is calculated by multiplying a quantization step value of a first stream in the (N+1) period by the quantization step conversion factor.

Abstract: A ceramic electronic component comprises a ceramic element body and an outer electrode arranged on the ceramic element body. The outer electrode includes a first electrode layer and a second electrode layer formed on the first electrode layer. The first electrode layer is formed on an outer surface of the ceramic element body and contains Ag and a glass material. The second electrode layer contains Pt and has a plurality of holes reaching the first electrode layer at respective locations.

Abstract: A production method of a dielectric ceramic composition using a reacted material obtained by making a main component including barium titanate react with a fourth subcomponent including an oxide of R (note that R is at least one selected from Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu). According to the invention, a dielectric ceramic composition capable of improving the specific permittivity without deteriorating other electric characteristics (for example, a temperature characteristic of the capacitance, insulation resistance, accelerated lifetime of the insulation resistance and dielectric loss), and the production method can be provided.

Abstract: A production method of a dielectric ceramic composition comprising a main component including barium titanate expressed by a composition formula of BamTiO2+m, wherein “m” satisfies 0.990<m<1.010, a fourth subcomponent including an oxide of R (note that R is at least one selected from Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu), and other subcomponent including at least BaO; comprising steps of preparing a post-reaction material by bringing a material of said main component to react in advance with at least a part of a material of said fourth subcomponent, wherein, when an amount of BaO included in said other subcomponent is n mole with respect to 100 moles of said main component, and said main component and said BaO are expressed by a composition formula of Bam+n/100TiO2+m+n/100, wherein “m” and “n” satisfy 0.994<m+n/100<1.

Abstract: A production method of a dielectric ceramic composition comprising a main component including a compound having a perovskite-type crystal structure expressed by a composition formula (Ba1-xCax) (Ti1-yZry)O3 (note that 0?x?0.2, 0?y?0.2), and a fourth subcomponent including an oxide of R (note that R is at least one selected from Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu); comprising steps of obtaining a post-reaction material by bringing a material of the main component to react in advance with a part of a material of the fourth subcomponent to be included in the dielectric ceramic composition, and adding rest of material of the fourth subcomponent to be included in the dielectric ceramic composition into the post-reaction material. According to the present invention, both of a dielectric ceramic composition capable of improving the specific permittivity and a temperature characteristic of capacitance can be preferable, and the production method can be provided.

Abstract: A production method of a dielectric ceramic composition comprising a main component including a compound having a perovskite-type crystal structure expressed by a general formula ABO3 (note that “A” is Ba alone or a composite of Ba and Ca, and “B” is Ti alone or a composite of Ti and Zr), and a fourth subcomponent including an oxide of R (note that R is at least one selected from Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Th, Dy, Ho, Er, Tm, Yb and Lu); comprising steps of dividing a material of the main component to a first main component material and a second main component material, obtaining a post-reaction material by bringing the material of the first main component to react in advance with a part of the fourth subcomponent material to be included in the dielectric ceramic composition, and adding the material of the second main component and rest of the fourth subcomponent material to be included in the dielectric ceramic composition into the post-reaction material; wherein, when assuming that number of moles o