Abstract: A semiconductor component 150 has a semiconductor layer 1 including a winding wire part 10 and a winding return wire part 50 connected at a terminal end part of the winding wire part 10 and returning from the terminal end part toward a starting end part side, wherein the semiconductor component is disposed so as to surround an object to be measured.

Abstract: A semiconductor device has a first electrode 61; a second electrode 62; and a semiconductor layer 1 having a winding wire part 10 provided so as to surround a current flowing between the first electrode 61 and the second electrode 62, a winding return wire part, which is provided so as to surround the current, is connected to a terminal end part of the winding wire part 10 and returns toward a starting end part side from the terminal end part, and an integration circuit configuration part connected to the winding wire part 10 or the winding return wire part. The integration circuit configuration part has one or more of a resistance part 115, a capacitor part 125 and an operational amplifier part 135.

Abstract: A detection substrate 150 has a body film 1a having a through hole 91; a winding wire part 10 provided on a surface of one side of the body film 1a, on a surface of another side of the body film 1a and in the through hole 91, and disposed so as to surround a current to be detected; and a winding return wire part 50, provided on the body film 1a, connected at a terminal end part of the winding wire part 10 and returning from the terminal end part toward a starting end part side.

Abstract: A semiconductor device has a first electrode 61; a second electrode 62; and a semiconductor layer 1 having a winding wire part 10 provided so as to surround a current flowing between the first electrode 61 and the second electrode 62, a winding return wire part, which is provided so as to surround the current, is connected to a terminal end part of the winding wire part 10 and returns toward a starting end part side from the terminal end part, and an integration circuit configuration part connected to the winding wire part 10 or the winding return wire part. The integration circuit configuration part has one or more of a resistance part 115, a capacitor part 125 and an operational amplifier part 135.

Abstract: A semiconductor component 150 has a semiconductor layer 1 including a winding wire part 10 and a winding return wire part 50 connected at a terminal end part of the winding wire part 10 and returning from the terminal end part toward a starting end part side, wherein the semiconductor component is disposed so as to surround an object to be measured.

Abstract: A detection substrate 150 has a body film 1a having a through hole 91; a winding wire part 10 provided on a surface of one side of the body film 1a, on a surface of another side of the body film 1a and in the through hole 91, and disposed so as to surround a current to be detected; and a winding return wire part 50, provided on the body film 1a, connected at a terminal end part of the winding wire part 10 and returning from the terminal end part toward a starting end part side.

Abstract: A semiconductor device 100 has a first electrode 61; a second electrode 62; and a semiconductor layer 1 including a first winding wire part 10 provided so as to surround a current flowing between the first electrode 61 and the second electrode 62, and a second winding wire part 50 connected to a terminal end part of the first winding wire part 10 and returning from the terminal end part toward a starting end part side of the first winding wire part 10.