Abstract: A micro-electromechanical system (MEMS) device includes a substrate and a beam suspended relative to a surface of the substrate. The substrate includes a buried insulator layer and a cavity. The beam includes a first portion and a second portion that are separated by an isolation joint. The cavity separates the surface of the substrate from the beam.

Abstract: A micro-electromechanical system (MEMS) device includes a substrate and a beam suspended relative to a surface of the substrate. The substrate includes a buried insulator layer and a cavity. The beam includes a first portion and a second portion that are separated by an isolation joint. The cavity separates the surface of the substrate from the beam.

Abstract: A piezoelectric thin film structure includes a substrate, a silicon oxide film disposed on the substrate, a first aluminum oxide film disposed on the silicon oxide film, a lower electrode layer disposed on the first aluminum oxide film, a piezoelectric film layer disposed on the lower electrode layer, and an upper electrode layer disposed on the piezoelectric film layer.

Abstract: [Subject] To provide a pressure sensor capable of implementing cost reduction and miniaturization. [Solving Means] A pressure sensor 1 includes a silicon substrate 2 provided therein with a reference pressure chamber 8, a diaphragm 10, consisting of part of the silicon substrate 2, formed on a surface layer portion of the silicon substrate 2 to partition a reference pressure chamber 8, and an etching stop layer 9 formed on a lower surface of the diaphragm 10 facing the reference pressure chamber 8. A through-hole 11 communicating with the reference pressure chamber 8 is formed on the diaphragm 10, and a filler 13 is arranged in the through-hole 11.

Abstract: The acceleration sensor according to the present invention includes a circuit chip having a prescribed circuit built into a front surface thereof; a sensor chip bonded to the front surface of the circuit chip; and a resin package for sealing the circuit chip and the sensor chip, while the sensor chip includes: a membrane arranged to oppose to the front surface of the circuit chip and having a plurality of openings; a piezoresistor formed on a surface of the membrane opposed to the circuit chip; a support section provided on a side opposite to the circuit chip with respect to the membrane and supporting a peripheral edge portion of the membrane; and a weight section provided on the side opposite to the circuit chip with respect to the membrane and integrally held on a central portion of the membrane.

Abstract: MEMS sensor including substrate, lower thin film confronting one face of the substrate with a space therebetween and having lower through holes extending in the thickness direction thereof, and upper thin film arranged on the opposite side of the substrate confronting the lower thin film with a space therebetween and having upper through holes extending in the thickness direction. A MEMS sensor manufacturing method includes forming a first sacrificing layer on one face of a substrate, forming a lower thin film on the first sacrificing layer with lower through holes individually extending in the thickness direction, forming a second sacrificing layer on the lower thin film, forming an upper thin film on the second sacrificing layer with upper through holes individually extending in the thickness direction, removing the second sacrificing layer through the upper through holes by etching, and removing the first sacrificing layer through the upper and lower through holes by etching.

Abstract: A capacitance type pressure sensor includes a semiconductor substrate having a reference pressure compartment formed therein, a diaphragm formed of a portion of the semiconductor substrate and formed in a surface layer portion of the semiconductor substrate to define the reference pressure compartment, the diaphragm having a through-hole communicating with the reference pressure compartment, fillers arranged within the through-hole, and an isolation insulating layer surrounding the diaphragm to isolate the diaphragm from the remaining portion of the semiconductor substrate.

Abstract: [Subject] To provide a pressure sensor capable of implementing cost reduction and miniaturization. [Solving Means] A pressure sensor 1 includes a silicon substrate 2 provided therein with a reference pressure chamber 8, a diaphragm 10, consisting of part of the silicon substrate 2, formed on a surface layer portion of the silicon substrate 2 to partition a reference pressure chamber 8, and an etching stop layer 9 formed on a lower surface of the diaphragm 10 facing the reference pressure chamber 8. A through-hole 11 communicating with the reference pressure chamber 8 is formed on the diaphragm 10, and a filler 13 is arranged in the through-hole 11.

Abstract: The MEMS sensor according to the present invention includes a diaphragm.

Abstract: A piezoelectric thin film structure includes a substrate, a silicon oxide film disposed on the substrate, a first aluminum oxide film disposed on the silicon oxide film, a lower electrode layer disposed on the first aluminum oxide film, a piezoelectric film layer disposed on the lower electrode layer, and an upper electrode layer disposed on the piezoelectric film layer.

Abstract: A capacitance type pressure sensor includes a semiconductor substrate having a reference pressure compartment formed therein, a diaphragm formed of a portion of the semiconductor substrate and formed in a surface layer portion of the semiconductor substrate to define the reference pressure compartment, the diaphragm having a through-hole communicating with the reference pressure compartment, fillers arranged within the through-hole, and an isolation insulating layer surrounding the diaphragm to isolate the diaphragm from the remaining portion of the semiconductor substrate.

Abstract: The MEMS sensor according to the present invention includes a diaphragm. In the diaphragm, an angle formed by two straight lines connecting supporting portions and the center of a main portion with one another respectively is set to satisfy the relation of the following formula (1): (A2/A1)/(B2/B1)?1??(1) A2: maximum vibrational amplitude of the diaphragm in a case of working a physical quantity of a prescribed value on the diaphragm A1: maximum vibrational amplitude of the diaphragm in a case of working the physical quantity on the diaphragm in an omitting structure obtained by omitting one of the supporting portions from the diaphragm B2: maximum stress caused in the diaphragm in the case of working the physical quantity on the diaphragm B1: maximum stress caused in the diaphragm in the case of working the physical quantity on the diaphragm in the omitting structure.

Abstract: The MEMS sensor according to the present invention includes a diaphragm.

Abstract: The acceleration sensor according to the present invention includes a circuit chip having a prescribed circuit built into a front surface thereof; a sensor chip bonded to the front surface of the circuit chip; and a resin package for sealing the circuit chip and the sensor chip, while the sensor chip includes: a membrane arranged to oppose to the front surface of the circuit chip and having a plurality of openings; a piezoresistor formed on a surface of the membrane opposed to the circuit chip; a support section provided on a side opposite to the circuit chip with respect to the membrane and supporting a peripheral edge portion of the membrane; and a weight section provided on the side opposite to the circuit chip with respect to the membrane and integrally held on a central portion of the membrane.

Abstract: An MEMS sensor of the present invention includes a substrate, a lower thin film provided on a surface of the substrate, an upper thin film opposed to the lower thin film at an interval on the side opposite to the substrate, and a wall portion surrounding the lower thin film and the upper thin film and protruding on the side opposite to the lower thin film with respect to the upper thin film.

Abstract: An MEMS sensor of the present invention includes a substrate, a lower thin film provided on a surface of the substrate, an upper thin film opposed to the lower thin film at an interval on the side opposite to the substrate, and a wall portion surrounding the lower thin film and the upper thin film and protruding on the side opposite to the lower thin film with respect to the upper thin film.

Abstract: The acceleration sensor according to the present invention includes a circuit chip having a prescribed circuit built into a front surface thereof; a sensor chip bonded to the front surface of the circuit chip; and a resin package for sealing the circuit chip and the sensor chip, while the sensor chip includes: a membrane arranged to oppose to the front surface of the circuit chip and having a plurality of openings; a piezoresistor formed on a surface of the membrane opposed to the circuit chip; a support section provided on a side opposite to the circuit chip with respect to the membrane and supporting a peripheral edge portion of the membrane; and a weight section provided on the side opposite to the circuit chip with respect to the membrane and integrally held on a central portion of the membrane.

Abstract: An MEMS sensor of the present invention includes a substrate, a lower thin film provided on a surface of the substrate, an upper thin film opposed to the lower thin film at an interval on the side opposite to the substrate, and a wall portion surrounding the lower thin film and the upper thin film and protruding on the side opposite to the lower thin film with respect to the upper thin film.

Abstract: MEMS sensor including substrate, lower thin film confronting one face of the substrate with a space therebetween and having lower through holes extending in the thickness direction thereof, and upper thin film arranged on the opposite side of the substrate confronting the lower thin film with a space therebetween and having upper through holes extending in the thickness direction. A MEMS sensor manufacturing method includes forming a first sacrificing layer on one face of a substrate, forming a lower thin film on the first sacrificing layer with lower through holes individually extending in the thickness direction, forming a second sacrificing layer on the lower thin film, forming an upper thin film on the second sacrificing layer with upper through holes individually extending in the thickness direction, removing the second sacrificing layer through the upper through holes by etching, and removing the first sacrificing layer through the upper and lower through holes by etching.

Abstract: The MEMS sensor according to the present invention includes a diaphragm.