Patents by Inventor Mizuho Okada

Mizuho Okada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8978469
    Abstract: A piezoelectric thin film structure includes a substrate, a silicon oxide film disposed on the substrate, a first aluminum oxide film disposed on the silicon oxide film, a lower electrode layer disposed on the first aluminum oxide film, a piezoelectric film layer disposed on the lower electrode layer, and an upper electrode layer disposed on the piezoelectric film layer.
    Type: Grant
    Filed: March 31, 2012
    Date of Patent: March 17, 2015
    Assignee: Rohm Co., Ltd.
    Inventors: Masaki Takaoka, Daisuke Kaminishi, Mizuho Okada, Nobuhisa Yamashita
  • Patent number: 8829630
    Abstract: [Subject] To provide a pressure sensor capable of implementing cost reduction and miniaturization. [Solving Means] A pressure sensor 1 includes a silicon substrate 2 provided therein with a reference pressure chamber 8, a diaphragm 10, consisting of part of the silicon substrate 2, formed on a surface layer portion of the silicon substrate 2 to partition a reference pressure chamber 8, and an etching stop layer 9 formed on a lower surface of the diaphragm 10 facing the reference pressure chamber 8. A through-hole 11 communicating with the reference pressure chamber 8 is formed on the diaphragm 10, and a filler 13 is arranged in the through-hole 11.
    Type: Grant
    Filed: May 25, 2011
    Date of Patent: September 9, 2014
    Assignee: Rohm Co., Ltd.
    Inventors: Masahiro Sakuragi, Toma Fujita, Mizuho Okada
  • Patent number: 8776602
    Abstract: The acceleration sensor according to the present invention includes a circuit chip having a prescribed circuit built into a front surface thereof; a sensor chip bonded to the front surface of the circuit chip; and a resin package for sealing the circuit chip and the sensor chip, while the sensor chip includes: a membrane arranged to oppose to the front surface of the circuit chip and having a plurality of openings; a piezoresistor formed on a surface of the membrane opposed to the circuit chip; a support section provided on a side opposite to the circuit chip with respect to the membrane and supporting a peripheral edge portion of the membrane; and a weight section provided on the side opposite to the circuit chip with respect to the membrane and integrally held on a central portion of the membrane.
    Type: Grant
    Filed: November 10, 2010
    Date of Patent: July 15, 2014
    Assignee: Rohm Co., Ltd.
    Inventors: Goro Nakatani, Yasuhiro Fuwa, Mizuho Okada
  • Patent number: 8723279
    Abstract: MEMS sensor including substrate, lower thin film confronting one face of the substrate with a space therebetween and having lower through holes extending in the thickness direction thereof, and upper thin film arranged on the opposite side of the substrate confronting the lower thin film with a space therebetween and having upper through holes extending in the thickness direction. A MEMS sensor manufacturing method includes forming a first sacrificing layer on one face of a substrate, forming a lower thin film on the first sacrificing layer with lower through holes individually extending in the thickness direction, forming a second sacrificing layer on the lower thin film, forming an upper thin film on the second sacrificing layer with upper through holes individually extending in the thickness direction, removing the second sacrificing layer through the upper through holes by etching, and removing the first sacrificing layer through the upper and lower through holes by etching.
    Type: Grant
    Filed: July 22, 2008
    Date of Patent: May 13, 2014
    Assignee: Rohm Co., Ltd.
    Inventors: Goro Nakatani, Mizuho Okada, Nobuhisa Yamashita
  • Patent number: 8601879
    Abstract: A capacitance type pressure sensor includes a semiconductor substrate having a reference pressure compartment formed therein, a diaphragm formed of a portion of the semiconductor substrate and formed in a surface layer portion of the semiconductor substrate to define the reference pressure compartment, the diaphragm having a through-hole communicating with the reference pressure compartment, fillers arranged within the through-hole, and an isolation insulating layer surrounding the diaphragm to isolate the diaphragm from the remaining portion of the semiconductor substrate.
    Type: Grant
    Filed: January 26, 2012
    Date of Patent: December 10, 2013
    Assignee: Rohm Co., Ltd.
    Inventor: Mizuho Okada
  • Publication number: 20130062713
    Abstract: [Subject] To provide a pressure sensor capable of implementing cost reduction and miniaturization. [Solving Means] A pressure sensor 1 includes a silicon substrate 2 provided therein with a reference pressure chamber 8, a diaphragm 10, consisting of part of the silicon substrate 2, formed on a surface layer portion of the silicon substrate 2 to partition a reference pressure chamber 8, and an etching stop layer 9 formed on a lower surface of the diaphragm 10 facing the reference pressure chamber 8. A through-hole 11 communicating with the reference pressure chamber 8 is formed on the diaphragm 10, and a filler 13 is arranged in the through-hole 11.
    Type: Application
    Filed: May 25, 2011
    Publication date: March 14, 2013
    Applicant: ROHM CO., LTD.
    Inventors: Masahiro Sakuragi, Toma Fujita, Mizuho Okada
  • Patent number: 8390084
    Abstract: The MEMS sensor according to the present invention includes a diaphragm.
    Type: Grant
    Filed: May 23, 2011
    Date of Patent: March 5, 2013
    Assignee: Rohm Co., Ltd.
    Inventors: Goro Nakatani, Mizuho Okada, Nobuhisa Yamashita
  • Publication number: 20120247207
    Abstract: A piezoelectric thin film structure includes a substrate, a silicon oxide film disposed on the substrate, a first aluminum oxide film disposed on the silicon oxide film, a lower electrode layer disposed on the first aluminum oxide film, a piezoelectric film layer disposed on the lower electrode layer, and an upper electrode layer disposed on the piezoelectric film layer.
    Type: Application
    Filed: March 31, 2012
    Publication date: October 4, 2012
    Applicant: ROHM CO., LTD.
    Inventors: Masaki TAKAOKA, Daisuke KAMINISHI, Mizuho OKADA, Nobuhisa YAMASHITA
  • Publication number: 20120186354
    Abstract: A capacitance type pressure sensor includes a semiconductor substrate having a reference pressure compartment formed therein, a diaphragm formed of a portion of the semiconductor substrate and formed in a surface layer portion of the semiconductor substrate to define the reference pressure compartment, the diaphragm having a through-hole communicating with the reference pressure compartment, fillers arranged within the through-hole, and an isolation insulating layer surrounding the diaphragm to isolate the diaphragm from the remaining portion of the semiconductor substrate.
    Type: Application
    Filed: January 26, 2012
    Publication date: July 26, 2012
    Applicant: ROHM CO., LTD.
    Inventor: Mizuho OKADA
  • Patent number: 8039911
    Abstract: The MEMS sensor according to the present invention includes a diaphragm. In the diaphragm, an angle formed by two straight lines connecting supporting portions and the center of a main portion with one another respectively is set to satisfy the relation of the following formula (1): (A2/A1)/(B2/B1)?1??(1) A2: maximum vibrational amplitude of the diaphragm in a case of working a physical quantity of a prescribed value on the diaphragm A1: maximum vibrational amplitude of the diaphragm in a case of working the physical quantity on the diaphragm in an omitting structure obtained by omitting one of the supporting portions from the diaphragm B2: maximum stress caused in the diaphragm in the case of working the physical quantity on the diaphragm B1: maximum stress caused in the diaphragm in the case of working the physical quantity on the diaphragm in the omitting structure.
    Type: Grant
    Filed: June 16, 2009
    Date of Patent: October 18, 2011
    Assignee: Rohm Co., Ltd.
    Inventors: Goro Nakatani, Mizuho Okada, Nobuhisa Yamashita
  • Publication number: 20110227177
    Abstract: The MEMS sensor according to the present invention includes a diaphragm.
    Type: Application
    Filed: May 23, 2011
    Publication date: September 22, 2011
    Inventors: Goro Nakatani, Mizuho Okada, Nobuhisa Yamashita
  • Publication number: 20110057274
    Abstract: The acceleration sensor according to the present invention includes a circuit chip having a prescribed circuit built into a front surface thereof; a sensor chip bonded to the front surface of the circuit chip; and a resin package for sealing the circuit chip and the sensor chip, while the sensor chip includes: a membrane arranged to oppose to the front surface of the circuit chip and having a plurality of openings; a piezoresistor formed on a surface of the membrane opposed to the circuit chip; a support section provided on a side opposite to the circuit chip with respect to the membrane and supporting a peripheral edge portion of the membrane; and a weight section provided on the side opposite to the circuit chip with respect to the membrane and integrally held on a central portion of the membrane.
    Type: Application
    Filed: November 10, 2010
    Publication date: March 10, 2011
    Applicant: ROHM CO., LTD.
    Inventors: Goro NAKATANI, Yasuhiro Fuwa, Mizuho Okada
  • Patent number: 7898044
    Abstract: An MEMS sensor of the present invention includes a substrate, a lower thin film provided on a surface of the substrate, an upper thin film opposed to the lower thin film at an interval on the side opposite to the substrate, and a wall portion surrounding the lower thin film and the upper thin film and protruding on the side opposite to the lower thin film with respect to the upper thin film.
    Type: Grant
    Filed: September 22, 2010
    Date of Patent: March 1, 2011
    Assignee: Rohm Co., Ltd.
    Inventors: Goro Nakatani, Mizuho Okada, Nobuhisa Yamashita
  • Publication number: 20110012212
    Abstract: An MEMS sensor of the present invention includes a substrate, a lower thin film provided on a surface of the substrate, an upper thin film opposed to the lower thin film at an interval on the side opposite to the substrate, and a wall portion surrounding the lower thin film and the upper thin film and protruding on the side opposite to the lower thin film with respect to the upper thin film.
    Type: Application
    Filed: September 22, 2010
    Publication date: January 20, 2011
    Inventors: Goro Nakatani, Mizuho Okada, Nobuhisa Yamashita
  • Patent number: 7845229
    Abstract: The acceleration sensor according to the present invention includes a circuit chip having a prescribed circuit built into a front surface thereof; a sensor chip bonded to the front surface of the circuit chip; and a resin package for sealing the circuit chip and the sensor chip, while the sensor chip includes: a membrane arranged to oppose to the front surface of the circuit chip and having a plurality of openings; a piezoresistor formed on a surface of the membrane opposed to the circuit chip; a support section provided on a side opposite to the circuit chip with respect to the membrane and supporting a peripheral edge portion of the membrane; and a weight section provided on the side opposite to the circuit chip with respect to the membrane and integrally held on a central portion of the membrane.
    Type: Grant
    Filed: August 10, 2007
    Date of Patent: December 7, 2010
    Assignee: Rohm Co., Ltd.
    Inventors: Goro Nakatani, Yasuhiro Fuwa, Mizuho Okada
  • Patent number: 7825483
    Abstract: An MEMS sensor of the present invention includes a substrate, a lower thin film provided on a surface of the substrate, an upper thin film opposed to the lower thin film at an interval on the side opposite to the substrate, and a wall portion surrounding the lower thin film and the upper thin film and protruding on the side opposite to the lower thin film with respect to the upper thin film.
    Type: Grant
    Filed: July 22, 2008
    Date of Patent: November 2, 2010
    Assignee: Rohm Co., Ltd.
    Inventors: Goro Nakatani, Mizuho Okada, Nobuhisa Yamashita
  • Publication number: 20100193886
    Abstract: MEMS sensor including substrate, lower thin film confronting one face of the substrate with a space therebetween and having lower through holes extending in the thickness direction thereof, and upper thin film arranged on the opposite side of the substrate confronting the lower thin film with a space therebetween and having upper through holes extending in the thickness direction. A MEMS sensor manufacturing method includes forming a first sacrificing layer on one face of a substrate, forming a lower thin film on the first sacrificing layer with lower through holes individually extending in the thickness direction, forming a second sacrificing layer on the lower thin film, forming an upper thin film on the second sacrificing layer with upper through holes individually extending in the thickness direction, removing the second sacrificing layer through the upper through holes by etching, and removing the first sacrificing layer through the upper and lower through holes by etching.
    Type: Application
    Filed: July 22, 2008
    Publication date: August 5, 2010
    Applicant: ROHM CO., LTD.
    Inventors: Goro Nakatani, Mizuho Okada, Nobuhisa Yamashita
  • Publication number: 20090309173
    Abstract: The MEMS sensor according to the present invention includes a diaphragm.
    Type: Application
    Filed: June 16, 2009
    Publication date: December 17, 2009
    Applicant: ROHM CO., LTD.
    Inventors: Goro NAKATANI, Mizuho OKADA, Nobuhisa YAMASHITA
  • Publication number: 20090047479
    Abstract: An MEMS sensor of the present invention includes a substrate, a lower thin film provided on a surface of the substrate, an upper thin film opposed to the lower thin film at an interval on the side opposite to the substrate, and a wall portion surrounding the lower thin film and the upper thin film and protruding on the side opposite to the lower thin film with respect to the upper thin film.
    Type: Application
    Filed: July 22, 2008
    Publication date: February 19, 2009
    Applicant: ROHM CO., LTD.
    Inventors: Goro Nakatani, Mizuho Okada, Nobuhisa Yamashita
  • Publication number: 20080034868
    Abstract: The acceleration sensor according to the present invention includes a circuit chip having a prescribed circuit built into a front surface thereof; a sensor chip bonded to the front surface of the circuit chip; and a resin package for sealing the circuit chip and the sensor chip, while the sensor chip includes: a membrane arranged to oppose to the front surface of the circuit chip and having a plurality of openings; a piezoresistor formed on a surface of the membrane opposed to the circuit chip; a support section provided on a side opposite to the circuit chip with respect to the membrane and supporting a peripheral edge portion of the membrane; and a weight section provided on the side opposite to the circuit chip with respect to the membrane and integrally held on a central portion of the membrane.
    Type: Application
    Filed: August 10, 2007
    Publication date: February 14, 2008
    Applicant: ROHM CO., LTD.
    Inventors: Goro Nakatani, Yasuhiro Fuwa, Mizuho Okada