Patents by Inventor Mizuho Sato
Mizuho Sato has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9842939Abstract: In a transistor having a top-gate structure in which a gate electrode layer overlaps with an oxide semiconductor layer which faints a channel region with a gate insulating layer interposed therebetween, when a large amount of hydrogen is contained in the insulating layer, hydrogen is diffused into the oxide semiconductor layer because the insulating layer is in contact with the oxide semiconductor layer; thus, electric characteristics of the transistor are degraded. An object is to provide a semiconductor device having favorable electric characteristics. An insulating layer in which the concentration of hydrogen is less than 6×1020 atoms/cm3 is used for the insulating layer being in contact with oxide semiconductor layer which forms the channel region. Using the insulating layer, diffusion of hydrogen can be prevented and a semiconductor device having favorable electric characteristics can be provided.Type: GrantFiled: September 8, 2016Date of Patent: December 12, 2017Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yuta Endo, Toshinari Sasaki, Kosei Noda, Mizuho Sato, Mitsuhiro Ichijo, Toshiya Endo
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Patent number: 9577108Abstract: Disclosed is a semiconductor device with a transistor in which an oxide semiconductor is used. An insulating layer on a back channel side of the oxide semiconductor layer has capacitance of lower than or equal to 2×10?4 F/m2. For example, in the case of a top-gate transistor, a base insulating layer has capacitance of lower than or equal to 2×10?4 F/m2, whereby the adverse effect of an interface state between the substrate and the base insulating layer can be reduced. Thus, a semiconductor device where fluctuation in electrical characteristics is small and reliability is high can be manufactured.Type: GrantFiled: May 19, 2014Date of Patent: February 21, 2017Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yuta Endo, Toshinari Sasaki, Kosei Noda, Mizuho Sato
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Publication number: 20160380106Abstract: In a transistor having a top-gate structure in which a gate electrode layer overlaps with an oxide semiconductor layer which faints a channel region with a gate insulating layer interposed therebetween, when a large amount of hydrogen is contained in the insulating layer, hydrogen is diffused into the oxide semiconductor layer because the insulating layer is in contact with the oxide semiconductor layer; thus, electric characteristics of the transistor are degraded. An object is to provide a semiconductor device having favorable electric characteristics. An insulating layer in which the concentration of hydrogen is less than 6×1020 atoms/cm3 is used for the insulating layer being in contact with oxide semiconductor layer which forms the channel region. Using the insulating layer, diffusion of hydrogen can be prevented and a semiconductor device having favorable electric characteristics can be provided.Type: ApplicationFiled: September 8, 2016Publication date: December 29, 2016Inventors: Yuta ENDO, Toshinari SASAKI, Kosei NODA, Mizuho SATO, Mitsuhiro ICHIJO, Toshiya ENDO
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Patent number: 9443988Abstract: In a transistor having a top-gate structure in which a gate electrode layer overlaps with an oxide semiconductor layer which faints a channel region with a gate insulating layer interposed therebetween, when a large amount of hydrogen is contained in the insulating layer, hydrogen is diffused into the oxide semiconductor layer because the insulating layer is in contact with the oxide semiconductor layer; thus, electric characteristics of the transistor are degraded. An object is to provide a semiconductor device having favorable electric characteristics. An insulating layer in which the concentration of hydrogen is less than 6×1020 atoms/cm3 is used for the insulating layer being in contact with oxide semiconductor layer which forms the channel region. Using the insulating layer, diffusion of hydrogen can be prevented and a semiconductor device having favorable electric characteristics can be provided.Type: GrantFiled: September 30, 2014Date of Patent: September 13, 2016Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yuta Endo, Toshinari Sasaki, Kosei Noda, Mizuho Sato, Mitsuhiro Ichijo, Toshiya Endo
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Patent number: 9396939Abstract: An insulating layer containing a silicon peroxide radical is used as an insulating layer in contact with an oxide semiconductor layer for forming a channel. Oxygen is released from the insulating layer, whereby oxygen deficiency in the oxide semiconductor layer and an interface state between the insulating layer and the oxide semiconductor layer can be reduced. Accordingly, a semiconductor device where reliability is high and variation in electric characteristics is small can be manufactured.Type: GrantFiled: April 3, 2015Date of Patent: July 19, 2016Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yuta Endo, Toshinari Sasaki, Kosei Noda, Mizuho Sato
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Patent number: 9263589Abstract: An object of the present invention is to manufacture a semiconductor device where fluctuation in electrical characteristics is small and reliability is high in a transistor in which an oxide semiconductor is used. An insulating layer from which oxygen is released by heating is used as a base insulating layer of an oxide semiconductor layer which forms a channel. Oxygen is released from the base insulating layer, whereby oxygen deficiency in the oxide semiconductor layer and an interface state between the base insulating layer and the oxide semiconductor layer can be reduced. Thus, a semiconductor device where fluctuation in electrical characteristics is small and reliability is high can be manufactured.Type: GrantFiled: May 18, 2011Date of Patent: February 16, 2016Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yuta Endo, Toshinari Sasaki, Kosei Noda, Mizuho Sato
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Publication number: 20150279668Abstract: An insulating layer containing a silicon peroxide radical is used as an insulating layer in contact with an oxide semiconductor layer for forming a channel. Oxygen is released from the insulating layer, whereby oxygen deficiency in the oxide semiconductor layer and an interface state between the insulating layer and the oxide semiconductor layer can be reduced. Accordingly, a semiconductor device where reliability is high and variation in electric characteristics is small can be manufactured.Type: ApplicationFiled: April 3, 2015Publication date: October 1, 2015Inventors: Yuta ENDO, Toshinari SASAKI, Kosei NODA, Mizuho SATO
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Patent number: 8999811Abstract: An insulating layer containing a silicon peroxide radical is used as an insulating layer in contact with an oxide semiconductor layer for forming a channel. Oxygen is released from the insulating layer, whereby oxygen deficiency in the oxide semiconductor layer and an interface state between the insulating layer and the oxide semiconductor layer can be reduced. Accordingly, a semiconductor device where reliability is high and variation in electric characteristics is small can be manufactured.Type: GrantFiled: August 29, 2013Date of Patent: April 7, 2015Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yuta Endo, Toshinari Sasaki, Kosei Noda, Mizuho Sato
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Publication number: 20150053975Abstract: In a transistor having a top-gate structure in which a gate electrode layer overlaps with an oxide semiconductor layer which faints a channel region with a gate insulating layer interposed therebetween, when a large amount of hydrogen is contained in the insulating layer, hydrogen is diffused into the oxide semiconductor layer because the insulating layer is in contact with the oxide semiconductor layer; thus, electric characteristics of the transistor are degraded. An object is to provide a semiconductor device having favorable electric characteristics. An insulating layer in which the concentration of hydrogen is less than 6×1020 atoms/cm3 is used for the insulating layer being in contact with oxide semiconductor layer which forms the channel region. Using the insulating layer, diffusion of hydrogen can be prevented and a semiconductor device having favorable electric characteristics can be provided.Type: ApplicationFiled: September 30, 2014Publication date: February 26, 2015Inventors: Yuta ENDO, Toshinari SASAKI, Kosei NODA, Mizuho SATO, Mitsuhiro ICHIJO, Toshiya ENDO
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Patent number: 8853684Abstract: In a transistor having a top-gate structure in which a gate electrode layer overlaps with an oxide semiconductor layer which forms a channel region with a gate insulating layer interposed therebetween, when a large amount of hydrogen is contained in the insulating layer, hydrogen is diffused into the oxide semiconductor layer because the insulating layer is in contact with the oxide semiconductor layer; thus, electric characteristics of the transistor are degraded. An object is to provide a semiconductor device having favorable electric characteristics. An insulating layer in which the concentration of hydrogen is less than 6×1020 atoms/cm3 is used for the insulating layer being in contact with oxide semiconductor layer which forms the channel region. Using the insulating layer, diffusion of hydrogen can be prevented and a semiconductor device having favorable electric characteristics can be provided.Type: GrantFiled: May 17, 2011Date of Patent: October 7, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yuta Endo, Toshinari Sasaki, Kosei Noda, Mizuho Sato, Mitsuhiro Ichijo, Toshiya Endo
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Publication number: 20140252347Abstract: Disclosed is a semiconductor device with a transistor in which an oxide semiconductor is used. An insulating layer on a back channel side of the oxide semiconductor layer has capacitance of lower than or equal to 2×10?4 F/m2. For example, in the case of a top-gate transistor, a base insulating layer has capacitance of lower than or equal to 2×10?4 F/m2, whereby the adverse effect of an interface state between the substrate and the base insulating layer can be reduced. Thus, a semiconductor device where fluctuation in electrical characteristics is small and reliability is high can be manufactured.Type: ApplicationFiled: May 19, 2014Publication date: September 11, 2014Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yuta ENDO, Toshinari SASAKI, Kosei NODA, Mizuho SATO
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Publication number: 20140011319Abstract: An insulating layer containing a silicon peroxide radical is used as an insulating layer in contact with an oxide semiconductor layer for forming a channel. Oxygen is released from the insulating layer, whereby oxygen deficiency in the oxide semiconductor layer and an interface state between the insulating layer and the oxide semiconductor layer can be reduced. Accordingly, a semiconductor device where reliability is high and variation in electric characteristics is small can be manufactured.Type: ApplicationFiled: August 29, 2013Publication date: January 9, 2014Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yuta ENDO, Toshinari SASAKI, Kosei NODA, Mizuho SATO
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Patent number: 8525304Abstract: An insulating layer containing a silicon peroxide radical is used as an insulating layer in contact with an oxide semiconductor layer for forming a channel. Oxygen is released from the insulating layer, whereby oxygen deficiency in the oxide semiconductor layer and an interface state between the insulating layer and the oxide semiconductor layer can be reduced. Accordingly, a semiconductor device where reliability is high and variation in electric characteristics is small can be manufactured.Type: GrantFiled: May 18, 2011Date of Patent: September 3, 2013Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yuta Endo, Toshinari Sasaki, Kosei Noda, Mizuho Sato
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Patent number: 8476719Abstract: Oxygen is released from the insulating layer, whereby oxygen deficiency in the oxide semiconductor layer and an interface state between the insulating layer and the oxide semiconductor layer can be reduced. Accordingly, a semiconductor device where reliability is high and variation in electric characteristics is small can be manufactured.Type: GrantFiled: May 18, 2011Date of Patent: July 2, 2013Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yuta Endo, Toshinari Sasaki, Kosei Noda, Mizuho Sato
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Patent number: 8377799Abstract: An object of the present invention is to provide an SOI substrate including a semiconductor layer which is efficiently planarized. A method for manufacturing an SOI substrate includes a step of irradiating a bond substrate with an accelerated ion to form an embrittlement region; a step of bonding the bond substrate and the base substrate with an insulating layer positioned therebetween; a step of splitting the bond substrate at the embrittlement region to leave a semiconductor layer bonded to the base substrate; a step of disposing the semiconductor layer in front of a semiconductor target containing the same semiconductor material as the semiconductor layer; and a step of alternately irradiating the surface of the semiconductor layer and the semiconductor target with a rare gas ion, so that the surface of the semiconductor layer is planarized.Type: GrantFiled: March 24, 2011Date of Patent: February 19, 2013Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Toru Takayama, Mizuho Sato, Noriaki Uto
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Publication number: 20110284844Abstract: An object of the present invention is to manufacture a semiconductor device where fluctuation in electrical characteristics is small and reliability is high in a transistor in which an oxide semiconductor is used. An insulating layer from which oxygen is released by heating is used as a base insulating layer of an oxide semiconductor layer which forms a channel. Oxygen is released from the base insulating layer, whereby oxygen deficiency in the oxide semiconductor layer and an interface state between the base insulating layer and the oxide semiconductor layer can be reduced. Thus, a semiconductor device where fluctuation in electrical characteristics is small and reliability is high can be manufactured.Type: ApplicationFiled: May 18, 2011Publication date: November 24, 2011Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Yuta ENDO, Toshinari SASAKI, Kosei NODA, Mizuho SATO
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Publication number: 20110284854Abstract: In a transistor having a top-gate structure in which a gate electrode layer overlaps with an oxide semiconductor layer which forms a channel region with a gate insulating layer interposed therebetween, when a large amount of hydrogen is contained in the insulating layer, hydrogen is diffused into the oxide semiconductor layer because the insulating layer is in contact with the oxide semiconductor layer; thus, electric characteristics of the transistor are degraded. An object is to provide a semiconductor device having favorable electric characteristics. An insulating layer in which the concentration of hydrogen is less than 6×1020 atoms/cm3 is used for the insulating layer being in contact with oxide semiconductor layer which forms the channel region. Using the insulating layer, diffusion of hydrogen can be prevented and a semiconductor device having favorable electric characteristics can be provided.Type: ApplicationFiled: May 17, 2011Publication date: November 24, 2011Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Yuta ENDO, Toshinari SASAKI, Kosei NODA, Mizuho SATO, Mitsuhiro ICHIJO, Toshiya ENDO
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Publication number: 20110284845Abstract: An insulating layer containing a silicon peroxide radical is used as an insulating layer in contact with an oxide semiconductor layer for forming a channel. Oxygen is released from the insulating layer, whereby oxygen deficiency in the oxide semiconductor layer and an interface state between the insulating layer and the oxide semiconductor layer can be reduced. Accordingly, a semiconductor device where reliability is high and variation in electric characteristics is small can be manufactured.Type: ApplicationFiled: May 18, 2011Publication date: November 24, 2011Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Yuta ENDO, Toshinari SASAKI, Kosei NODA, Mizuho SATO
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Publication number: 20110284846Abstract: Oxygen is released from the insulating layer, whereby oxygen deficiency in the oxide semiconductor layer and an interface state between the insulating layer and the oxide semiconductor layer can be reduced. Accordingly, a semiconductor device where reliability is high and variation in electric characteristics is small can be manufactured.Type: ApplicationFiled: May 18, 2011Publication date: November 24, 2011Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Yuta ENDO, Toshinari SASAKI, Kosei NODA, Mizuho SATO
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Publication number: 20110284847Abstract: Disclosed is a semiconductor device with a transistor in which an oxide semiconductor is used. An insulating layer on a back channel side of the oxide semiconductor layer has capacitance of lower than or equal to 1.5×10?10 F/m2. For example, in the case of a top-gate transistor, a base insulating layer has capacitance of lower than or equal to 1.5×10?10 F/m2, whereby the adverse effect of an interface state between the substrate and the base insulating layer can be reduced. Thus, a semiconductor device where fluctuation in electrical characteristics is small and reliability is high can be manufactured.Type: ApplicationFiled: May 18, 2011Publication date: November 24, 2011Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Yuta ENDO, Toshinari SASAKI, Kosei NODA, Mizuho SATO