Patents by Inventor Mizuki KATAOKA

Mizuki KATAOKA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Reflective mask blank, reflective mask and method of manufacturing the same, and method of manufacturing semiconductor device
    Patent number: 11892768
    Abstract: Provided is a reflective mask blank that can reduce the shadowing effect of a reflective mask and form a fine and high-precision absorbent body pattern.
    Type: Grant
    Filed: August 8, 2019
    Date of Patent: February 6, 2024
    Assignee: HOYA CORPORATION
    Inventors: Mizuki Kataoka, Yohei Ikebe
  • REFLECTION-TYPE MASK BLANK, REFLECTION-TYPE MASK AND METHOD FOR MANUFACTURING SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    Publication number: 20220091498
    Abstract: Provided is a reflection-type mask blank which enables the further reduction of the shadowing effect of a reflection-type mask. A reflection-type mask blank in which a multilayer reflection film and an absorber film are arranged in this order on a substrate, the reflection-type mask blank being characterized in that the absorber film is made from a material comprising an amorphous metal containing at least one element selected from tin (Sn), tantalum (Ta), chromium (Cr), cobalt (Co), nickel (Ni), antimony (Sb), platinum (Pt), iridium (Ir), iron (Fe), gold (Au), aluminum (Al), copper (Cu), zinc (Zn) and silver (Ag) and the absorber film has a film thickness of 55 nm or less.
    Type: Application
    Filed: March 6, 2020
    Publication date: March 24, 2022
    Applicant: HOYA CORPORATION
    Inventor: Mizuki KATAOKA
  • Reflective mask blank, reflective mask and manufacturing method thereof, and semiconductor device manufacturing method
    Patent number: 11237472
    Abstract: Provided are a reflective mask blank and a reflective mask, which are able to reduce the shadowing effects of EUV lithography and form a fine pattern. As a result, a semiconductor device can be stably manufactured with high transfer accuracy. The reflective mask blank comprises a multilayer reflective film and an absorber film in that order on a substrate, and the absorber film comprises a material comprising an amorphous metal comprising at least one or more elements among cobalt (Co) and nickel (Ni).
    Type: Grant
    Filed: March 1, 2018
    Date of Patent: February 1, 2022
    Assignee: HOYA CORPORATION
    Inventors: Yohei Ikebe, Junichi Horikawa, Takahiro Onoue, Mizuki Kataoka
  • REFLECTIVE MASK BLANK, REFLECTIVE MASK AND METHOD FOR MANUFACTURING SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    Publication number: 20210311382
    Abstract: Provided is a reflective mask blank that can reduce the shadowing effect of a reflective mask and form a fine and high-precision absorbent body pattern.
    Type: Application
    Filed: August 8, 2019
    Publication date: October 7, 2021
    Applicant: HOYA CORPORATION
    Inventors: Mizuki KATAOKA, Yohei IKEBE
  • REFLECTIVE MASK BLANK, REFLECTIVE MASK AND MANUFACTURING METHOD THEREOF, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
    Publication number: 20190384157
    Abstract: Provided are a reflective mask blank and a reflective mask, which are able to reduce the shadowing effects of EUV lithography and form a fine pattern. As a result, a semiconductor device can be stably manufactured with high transfer accuracy. The reflective mask blank comprises a multilayer reflective film and an absorber film in that order on a substrate, and the absorber film comprises a material comprising an amorphous metal comprising at least one or more elements among cobalt (Co) and nickel (Ni).
    Type: Application
    Filed: March 1, 2018
    Publication date: December 19, 2019
    Applicant: HOYA CORPORATION
    Inventors: Yohei IKEBE, Junichi HORIKAWA, Takahiro ONOUE, Mizuki KATAOKA