Abstract: This far-infrared spectroscopy device is provided with: a variable wavelength far-infrared light source that generates first far-infrared light; an illuminating optical system that irradiates a sample with the first far-infrared light; a detecting nonlinear optical crystal that converts second far-infrared light into near-infrared light using pump light, said second far-infrared light having been transmitted from the sample; and a far-infrared image-forming optical system that forms an image of the sample in the detecting nonlinear optical crystal. The irradiation position of the first far-infrared light on the sample does not depend on the wavelength of the first far-infrared light.

Abstract: This far-infrared spectroscopy device is provided with: a variable wavelength far-infrared light source that generates first far-infrared light; an illuminating optical system that irradiates a sample with the first far-infrared light; a detecting nonlinear optical crystal that converts second far-infrared light into near-infrared light using pump light, said second far-infrared light having been transmitted from the sample; and a far-infrared image-forming optical system that forms an image of the sample in the detecting nonlinear optical crystal. The irradiation position of the first far-infrared light on the sample does not depend on the wavelength of the first far-infrared light.

Abstract: This far-infrared spectroscopy device is provided with: a variable wavelength far-infrared light source that generates first far-infrared light; an illuminating optical system that irradiates a sample with the first far-infrared light; a detecting nonlinear optical crystal that converts second far-infrared light into near-infrared light using pump light, said second far-infrared light having been transmitted from the sample; and a far-infrared image-forming optical system that forms an image of the sample in the detecting nonlinear optical crystal. The irradiation position of the first far-infrared light on the sample does not depend on the wavelength of the first far-infrared light.

Abstract: This far-infrared spectroscopy device is provided with: a variable wavelength far-infrared light source that generates first far-infrared light; an illuminating optical system that irradiates a sample with the first far-infrared light; a detecting nonlinear optical crystal that converts second far-infrared light into near-infrared light using pump light, said second far-infrared light having been transmitted from the sample; and a far-infrared image-forming optical system that forms an image of the sample in the detecting nonlinear optical crystal. The irradiation position of the first far-infrared light on the sample does not depend on the wavelength of the first far-infrared light.

Abstract: This far-infrared spectroscopy device is provided with: a variable wavelength far-infrared light source that generates first far-infrared light; an illuminating optical system that irradiates a sample with the first far-infrared light; a detecting nonlinear optical crystal that converts second far-infrared light into near-infrared light using pump light, said second far-infrared light having been transmitted from the sample; and a far-infrared image-forming optical system that forms an image of the sample in the detecting nonlinear optical crystal. The irradiation position of the first far-infrared light on the sample does not depend on the wavelength of the first far-infrared light.

Abstract: This far-infrared spectroscopy device is provided with: a variable wavelength far-infrared light source that generates first far-infrared light; an illuminating optical system that irradiates a sample with the first far-infrared light; a detecting nonlinear optical crystal that converts second far-infrared light into near-infrared light using pump light, said second far-infrared light having been transmitted from the sample; and a far-infrared image-forming optical system that forms an image of the sample in the detecting nonlinear optical crystal. The irradiation position of the first far-infrared light on the sample does not depend on the wavelength of the first far-infrared light.

Abstract: The present invention allows observation or capturing of a high-contrast image of a sample for which sufficient contrast cannot be obtained in bright-field observation, such as a wafer having a pattern with a small pattern height. According to the present invention, a sample is illuminated through an objective lens used for capturing an image, and an imaging optics are provided with an aperture filter so that an image is captured while light of bright-field observation components is significantly attenuated.

Abstract: A surface inspecting apparatus can inspect a smaller defect by using a PSL of a smaller particle size. However, the particle size of the PSL is restricted. In the conventional surface inspecting apparatus, therefore, no consideration has been taken as to how to inspect the defect of such a small particle size as is not set in the PSL which will be needed in the near future in an inspection of a semiconductor manufacturing step. The invention has a light source device for generating light which simulated at least one of a wavelength, a light intensity, a time-dependent change of the light intensity, and a polarization of light which was scattered, diffracted, or reflected by an inspection object, and the light is inputted to a photodetector of the surface inspecting apparatus. The smaller defect can be inspected.

Abstract: Light that is scattered by a defect on a wafer is very weak, and a PMT and an MPPC are used as detection methods for measuring the weak light with high speed and sensitivity. The methods have a function of photoelectronically converting the weak light and multiplying an electron, but have a problem in that a signal light is lost and an S/N ratio is reduced because the quantum efficiency of the photoelectron conversion is as low as 50% or less. Direct light is amplified prior to the photoelectron conversion. The optical amplification is an amplification method in which the signal light and light of pump light are introduced into a rare-earth doped fiber, a stimulated emission is caused, and the signal light is amplified. In the present invention, the optical amplification is used. The amplification factor is changed according to various conditions.

Abstract: The present invention allows observation or capturing of a high-contrast image of a sample for which sufficient contrast cannot be obtained in bright-field observation, such as a wafer having a pattern with a small pattern height. According to the present invention, a sample is illuminated through an objective lens used for capturing an image, and an imaging optics are provided with an aperture filter so that an image is captured while light of bright-field observation components is significantly attenuated.

Abstract: A surface inspecting apparatus can inspect a smaller defect by using a PSL of a smaller particle size. However, the particle size of the PSL is restricted. In the conventional surface inspecting apparatus, therefore, no consideration has been taken as to how to inspect the defect of such a small particle size as is not set in the PSL which will be needed in the near future in an inspection of a semiconductor manufacturing step. The invention has a light source device for generating light which simulated at least one of a wavelength, a light intensity, a time-dependent change of the light intensity, and a polarization of light which was scattered, diffracted, or reflected by an inspection object, and the light is inputted to a photodetector of the surface inspecting apparatus. The smaller defect can be inspected.

Abstract: Light that is scattered by a defect on a wafer is very weak, and a PMT and an MPPC are used as detection methods for measuring the weak light with high speed and sensitivity. The methods have a function of photoelectronically converting the weak light and multiplying an electron, but have a problem in that a signal light is lost and an S/N ratio is reduced because the quantum efficiency of the photoelectron conversion is as low as 50% or less. Direct light is amplified prior to the photoelectron conversion. The optical amplification is an amplification method in which the signal light and light of pump light are introduced into a rare-earth doped fiber, a stimulated emission is caused, and the signal light is amplified. In the present invention, the optical amplification is used. The amplification factor is changed according to various conditions.

Abstract: A surface inspecting apparatus can inspect a smaller defect by using a PSL of a smaller particle size. However, the particle size of the PSL is restricted. In the conventional surface inspecting apparatus, therefore, no consideration has been taken as to how to inspect the defect of such a small particle size as is not set in the PSL which will be needed in the near future in an inspection of a semiconductor manufacturing step. The invention has a light source device for generating light which simulated at least one of a wavelength, a light intensity, a time-dependent change of the light intensity, and a polarization of light which was scattered, diffracted, or reflected by an inspection object, and the light is inputted to a photodetector of the surface inspecting apparatus. The smaller defect can be inspected.

Abstract: The light scattered from the sample surface and foreign matter is imaged on an image intensifier and detected by a lens-coupled multi-pixel sensor such as a TDI sensor or a CCD sensor. The light scattered by surface roughness is spatially eliminated to detect the light scattered from foreign matter with increased sensitivity. A mechanism for shifting the image intensifier is incorporated to prevent a signal intensity decrease, which may be caused by a decrease in the sensitivity of the image intensifier.

Abstract: A surface inspecting apparatus can inspect a smaller defect by using a PSL of a smaller particle size. However, the particle size of the PSL is restricted. In the conventional surface inspecting apparatus, therefore, no consideration has been taken as to how to inspect the defect of such a small particle size as is not set in the PSL which will be needed in the near future in an inspection of a semiconductor manufacturing step. The invention has a light source device for generating light which simulated at least one of a wavelength, a light intensity, a time-dependent change of the light intensity, and a polarization of light which was scattered, diffracted, or reflected by an inspection object, and the light is inputted to a photodetector of the surface inspecting apparatus. The smaller defect can be inspected.