Abstract: Provided is a highly reliable thermal flow meter. In a thermal flow meter 20, a flow rate detection element 321 that detects an air flow rate, and a conductive coating film 400 containing a conductive substance and a resin as constituent elements are provided on at least a part of a portion provided in an auxiliary passage 135 on a surface facing a detection surface 322 of the flow rate detection element 321.

Abstract: An acquisition unit acquires pieces of information including information related to a vehicle, information related to the environment inside and outside the vehicle, and information related to a driver on board the vehicle. A determination unit determines priorities of the pieces of information acquired by the acquisition unit on the basis of a service or the like used by the driver among services or the likes provided using information accumulated in a server device. A selection unit selects a piece of information to be transmitted to the server device from among the pieces of information acquired by the acquisition unit on the basis of the priorities determined by the determination unit. A communication unit transmits the piece of information selected by the selection unit to the server device.

Abstract: Provided is a highly reliable thermal flow meter. In a thermal flow meter 20, a flow rate detection element 321 that detects an air flow rate, and a conductive coating film 400 containing a conductive substance and a resin as constituent elements are provided on at least a part of a portion provided in an auxiliary passage 135 on a surface facing a detection surface 322 of the flow rate detection element 321.

Abstract: Provided is a physical quantity measurement device in which a bonding temperature of a bonding layer is lowered to a temperature not affecting an operation of a semiconductor chip and an insulating property of the semiconductor chip and a base is secured. The physical quantity measurement device includes a base (diaphragm), a semiconductor chip (strain detection element) to measure a physical quantity on the basis of stress acting on the base, and a bonding layer to bond the semiconductor chip to the base. The bonding layer has a first bonding layer bonded to the semiconductor chip, a second bonding layer bonded to the base, and an insulating base material disposed between the first bonding layer and the second bonding layer. The first and second bonding layers and contain glass.

Abstract: Provided is a physical quantity measurement device in which a bonding temperature of a bonding layer is lowered to a temperature not affecting an operation of a semiconductor chip and an insulating property of the semiconductor chip and a base is secured. The physical quantity measurement device includes a base (diaphragm), a semiconductor chip (strain detection element) to measure a physical quantity on the basis of stress acting on the base, and a bonding layer to bond the semiconductor chip to the base. The bonding layer has a first bonding layer bonded to the semiconductor chip, a second bonding layer bonded to the base, and an insulating base material disposed between the first bonding layer and the second bonding layer. The first and second bonding layers and contain glass.

Abstract: A semiconductor device includes a metal body; a bonding layer placed on the metal body; and a semiconductor chip placed on the bonding layer. The bonding layer includes a filler-containing first layer formed between the metal body and the semiconductor chip and a second layer bonded to the first layer and the semiconductor chip. The second layer has a thermal expansion coefficient higher than that of the first layer.

Abstract: Provided is a pressure measuring device that can stably bond a strain detection element even to a diaphragm made of metal having a large coefficient of thermal expansion. In order to achieve the above object, the pressure measuring device of the present invention includes: a metal housing including a pressure introduction unit and a diaphragm deformed by a pressure introduced via the pressure introduction unit; and a strain detection element for detecting strain generated in the diaphragm, wherein a base made of a first brittle material is provided on the metal housing, and the strain detection element is bonded to the base via a second brittle material having a melting point lower than a melting point of the base.

Abstract: A semiconductor device includes a metal body; a bonding layer placed on the metal body; and a semiconductor chip placed on the bonding layer. The bonding layer includes a filler-containing first layer formed between the metal body and the semiconductor chip and a second layer bonded to the first layer and the semiconductor chip. The second layer has a thermal expansion coefficient higher than that of the first layer.

Abstract: Provided is a pressure measuring device that can stably bond a strain detection element even to a diaphragm made of metal having a large coefficient of thermal expansion. In order to achieve the above object, the pressure measuring device of the present invention includes: a metal housing including a pressure introduction unit and a diaphragm deformed by a pressure introduced via the pressure introduction unit; and a strain detection element for detecting strain generated in the diaphragm, wherein a base made of a first brittle material is provided on the metal housing, and the strain detection element is bonded to the base via a second brittle material having a melting point lower than a melting point of the base.

Abstract: Provided is a highly reliable ceramic circuit board which can be manufactured at a low cost and is friendly to environment as a material from which lead is eliminated in forming the multilayered structure.