Patents by Inventor Mizuki TAMURA

Mizuki TAMURA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor storage device
    Patent number: 11955372
    Abstract: A semiconductor storage device includes: a semiconductor substrate; a plurality of circuit regions; and an element isolation region having a trench shape formed between the circuit regions. In the element isolation region including a thermal oxide film and a silicon oxide film, a sub-trench is formed in a bottom corner portion, and the thermal oxide film covers at least an inner wall of the sub-trench.
    Type: Grant
    Filed: August 20, 2021
    Date of Patent: April 9, 2024
    Assignee: KIOXIA CORPORATION
    Inventors: Takehiro Nakai, Mizuki Tamura, Yumiko Yamashita
  • Semiconductor device and method of manufacturing the same
    Patent number: 11862586
    Abstract: In one embodiment, a semiconductor device includes a first insulator, a first pad provided in the first insulator, a second insulator provided on the first insulator, and a second pad provided on the first pad in the second insulator. Furthermore, the first insulator includes a first film that is in contact with the first pad and the second insulator, and a second film provided at an interval from the first pad and the second insulator, and including a portion provided at a same height as at least a portion of the first pad.
    Type: Grant
    Filed: December 15, 2021
    Date of Patent: January 2, 2024
    Assignee: Kioxia Corporation
    Inventor: Mizuki Tamura
  • SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20220406739
    Abstract: In one embodiment, a semiconductor device includes a first insulator, a first pad provided in the first insulator, a second insulator provided on the first insulator, and a second pad provided on the first pad in the second insulator. Furthermore, the first insulator includes a first film that is in contact with the first pad and the second insulator, and a second film provided at an interval from the first pad and the second insulator, and including a portion provided at a same height as at least a portion of the first pad.
    Type: Application
    Filed: December 15, 2021
    Publication date: December 22, 2022
    Applicant: Kioxia Corporation
    Inventor: Mizuki TAMURA
  • SEMICONDUCTOR STORAGE DEVICE
    Publication number: 20220148910
    Abstract: A semiconductor storage device includes: a semiconductor substrate; a plurality of circuit regions; and an element isolation region having a trench shape formed between the circuit regions. In the element isolation region including a thermal oxide film and a silicon oxide film, a sub-trench is formed in a bottom corner portion, and the thermal oxide film covers at least an inner wall of the sub-trench.
    Type: Application
    Filed: August 20, 2021
    Publication date: May 12, 2022
    Applicant: Kioxia Corporation
    Inventors: Takehiro NAKAI, Mizuki TAMURA, Yumiko YAMASHITA