Patents by Inventor Mo Yun

Mo Yun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Temperature measuring method and apparatus in semiconductor processing apparatus, and semiconductor processing method and apparatus
    Patent number: 6798036
    Abstract: A temperature measuring method for a target substrate to be thermally processed in a semiconductor processing apparatus under a predetermined process condition is provided. This method includes the steps of detecting a heat flux supplied from at least part of the target substrate and detecting a temperature of a sensor by using the sensor facing the target substrate, and calculating a temperature of the target substrate from a parameter, including a thermal resistance between the sensor and the target substrate under the predetermined process condition, the detected heat flux, and the temperature of the sensor. The sensor is arranged opposite to heating means, through the target substrate, which heats the target substrate. The parameter may be obtained in advance by calibration.
    Type: Grant
    Filed: May 8, 2003
    Date of Patent: September 28, 2004
    Assignee: Tokyo Electron Limited
    Inventor: Mo Yun
  • Temperature measuring method and apparatus in semiconductor processing apparatus, and semiconductor processing method and apparatus
    Publication number: 20030206574
    Abstract: A temperature measuring method for a target substrate to be thermally processed in a semiconductor processing apparatus under a predetermined process condition is provided. This method includes the steps of detecting a heat flux supplied from at least part of the target substrate and detecting a temperature of a sensor by using the sensor facing the target substrate, and calculating a temperature of the target substrate from a parameter, including a thermal resistance between the sensor and the target substrate under the predetermined process condition, the detected heat flux, and the temperature of the sensor. The sensor is arranged opposite to heating means, through the target substrate, which heats the target substrate. The parameter may be obtained in advance by calibration.
    Type: Application
    Filed: May 8, 2003
    Publication date: November 6, 2003
    Applicant: TOKYO ELECTRON LIMITED
    Inventor: Mo Yun
  • Temperature measuring method and apparatus in semiconductor processing apparatus, and semiconductor processing method and apparatus
    Patent number: 6579731
    Abstract: A temperature measuring method for a target substrate to be thermally processed in a semiconductor processing apparatus under a predetermined process condition is provided. This method includes the steps of detecting a heat flux supplied from at least part of the target substrate and detecting a temperature of a sensor by using the sensor facing the target substrate, and calculating a temperature of the target substrate from a parameter, including a thermal resistance between the sensor and the target substrate under the predetermined process condition, the detected heat flux, and the temperature of the sensor. The sensor is arranged opposite to heating means, through the target substrate, which heats the target substrate. The parameter may be obtained in advance by calibration.
    Type: Grant
    Filed: November 29, 2001
    Date of Patent: June 17, 2003
    Assignee: Tokyo Electron Limited
    Inventor: Mo Yun
  • Temperature measuring method and apparatus in semiconductor processing apparatus, and semiconductor processing method and apparatus
    Publication number: 20020068371
    Abstract: A temperature measuring method for a target substrate to be thermally processed in a semiconductor processing apparatus under a predetermined process condition is provided. This method includes the steps of detecting a heat flux supplied from at least part of the target substrate and detecting a temperature of a sensor by using the sensor facing the target substrate, and calculating a temperature of the target substrate from a parameter, including a thermal resistance between the sensor and the target substrate under the predetermined process condition, the detected heat flux, and the temperature of the sensor. The sensor is arranged opposite to heating means, through the target substrate, which heats the target substrate. The parameter may be obtained in advance by calibration.
    Type: Application
    Filed: November 29, 2001
    Publication date: June 6, 2002
    Applicant: TOKYO ELECTRON LIMITED
    Inventor: Mo Yun