Patents by Inventor Moena YATABE

Moena YATABE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor integrated circuit device
    Patent number: 11482542
    Abstract: A semiconductor integrated circuit device includes a first power wiring that is formed on a semiconductor substrate and that extends in a first direction, a second power wiring that extends in the first direction such that the second power wiring is separated from the first power wiring, a first diffusion layer that is used for a p-channel type MOSFET and that is formed in a region between the first power wiring and the second power wiring, a second diffusion layer that is used for an n-channel type MOSFET and that is formed on a side of the second power wiring with respect to the first diffusion layer in the region between the first power wiring and the second power wiring, a first gate electrode that extends in a second direction perpendicular to the first direction and that straddles the first diffusion layer, a second gate electrode that extends in the second direction and that straddles the second diffusion layer, and a third diffusion layer for backgates that is formed below at least one of the first po
    Type: Grant
    Filed: February 4, 2020
    Date of Patent: October 25, 2022
    Assignee: ROHM CO., LTD.
    Inventors: Yuta Mizuochi, Yusuke Matsui, Moena Yatabe
  • SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
    Publication number: 20200251497
    Abstract: A semiconductor integrated circuit device includes a first power wiring that is formed on a semiconductor substrate and that extends in a first direction, a second power wiring that extends in the first direction such that the second power wiring is separated from the first power wiring, a first diffusion layer that is used for a p-channel type MOSFET and that is formed in a region between the first power wiring and the second power wiring, a second diffusion layer that is used for an n-channel type MOSFET and that is formed on a side of the second power wiring with respect to the first diffusion layer in the region between the first power wiring and the second power wiring, a first gate electrode that extends in a second direction perpendicular to the first direction and that straddles the first diffusion layer, a second gate electrode that extends in the second direction and that straddles the second diffusion layer, and a third diffusion layer for backgates that is formed below at least one of the first po
    Type: Application
    Filed: February 4, 2020
    Publication date: August 6, 2020
    Inventors: Yuta MIZUOCHI, Yusuke MATSUI, Moena YATABE