Abstract: A magnetic junction usable in a magnetic device is described. The magnetic junction includes a free layer and an oxide interlayer on the free layer. The oxide interlayer includes at least one glass-forming agent. In some aspects, the magnetic junction includes a reference layer and a nonmagnetic spacer layer being between the reference layer and the free layer. The free layer is between the nonmagnetic spacer layer and the oxide interlayer.

Abstract: A magnetic junction and method for providing the magnetic junction are described. The magnetic junction resides on a substrate and is usable in a magnetic device. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, a free layer, an oxide layer and at least one oxygen blocking layer. The free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. The nonmagnetic spacer layer is between the pinned layer and the free layer. The oxide layer is adjacent to the free layer. The free layer is between the nonmagnetic spacer layer and the oxide layer. The oxygen blocking layer(s) has a position selected from adjacent to the oxide layer and adjacent to the pinned layer. In some aspects, the magnetic junction may also include an oxygen adsorber layer and/or a tuning layer.

Abstract: A magnetic junction usable in a magnetic device is described. The magnetic junction includes a free layer and an oxide interlayer on the free layer. The oxide interlayer includes at least one glass-forming agent. In some aspects, the magnetic junction includes a reference layer and a nonmagnetic spacer layer being between the reference layer and the free layer. The free layer is between the nonmagnetic spacer layer and the oxide interlayer.

Abstract: A magnetic junction, a memory using the magnetic junction and method for providing the magnetic junction are described. The magnetic junction resides on a substrate and is usable in a magnetic device. The magnetic junction includes a reference layer, a nonmagnetic spacer layer and a M-containing oxide layer adjacent to the free layer. M includes at least one of Ti, Al, Hf, Zr, Mo, V and Nb. The free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. The nonmagnetic spacer layer is between the reference layer and the free layer. The free layer is between the nonmagnetic spacer layer and the M-containing oxide layer.

Abstract: A method and system for providing a magnetic element and a magnetic memory utilizing the magnetic element are described. The magnetic element is used in a magnetic device that includes a contact electrically coupled to the magnetic element. The method and system include providing pinned, nonmagnetic spacer, and free layers. The free layer has an out-of-plane demagnetization energy and a perpendicular magnetic anisotropy corresponding to a perpendicular anisotropy energy that is less than the out-of-plane demagnetization energy. The nonmagnetic spacer layer is between the pinned and free layers. The method and system also include providing a perpendicular capping layer adjoining the free layer and the contact. The perpendicular capping layer induces at least part of the perpendicular magnetic anisotropy in the free layer. The magnetic element is configured to allow the free layer to be switched between magnetic states when a write current is passed through the magnetic element.

Abstract: A magnetic device and method for providing the device are described. The magnetic device includes magnetic junction(s) and spin-orbit interaction active layer(s) adjacent to the magnetic junction free layer(s). The magnetic junction includes free and pinned layers separated by a nonmagnetic spacer layer. The free layer is switchable between stable magnetic states. Providing the pinned and/or free layer(s) includes providing a magnetic layer including a glass-promoting component, providing a sacrificial oxide on the magnetic layer, providing a sacrificial layer on the sacrificial oxide and performing anneal(s) of the magnetic layer, the sacrificial oxide layer and the sacrificial layer at anneal temperature(s) greater than 300 degrees Celsius and not exceeding 475 degrees Celsius. The magnetic layer is amorphous as-deposited but is at least partially crystallized after the anneal(s). The sacrificial layer includes a sink for the glass-promoting component.

Abstract: A magnetic junction and method for providing the magnetic junction are described. The method includes providing a pinned layer, a nonmagnetic spacer layer and a free layer switchable between stable magnetic states. The nonmagnetic spacer layer is between the pinned and free layers. Providing the pinned layer and/or providing the free layer includes cooling a portion of the magnetic junction, depositing a wetting layer while the portion of the magnetic junction is cooled, oxidizing/nitriding the wetting layer and depositing a boron-free magnetic layer on the oxide/nitride wetting layer. The portion of the magnetic junction is cooled to within a temperature range including temperature(s) not greater than 250 K. The wetting layer has a thickness of at least 0.25 and not more than three monolayers. The wetting layer includes at least one magnetic material. The boron-free magnetic layer has a perpendicular magnetic anisotropy energy greater than an out-of-plane demagnetization energy.

Abstract: A magnetic device and method for providing the magnetic device junction are described. The magnetic device includes magnetic junctions and spin-orbit interaction (SO) active layer(s). The magnetic junction includes a pinned layer, a perpendicular enhancement layer (PEL), an insertion layer between the pinned layer and PEL, a free layer and a nonmagnetic spacer layer between the PEL and free layer. The insertion layer includes at least one magnetic material and at least one high crystallization temperature nonmagnetic material. The PEL is between the insertion layer and the nonmagnetic spacer layer. The free layer is switchable between a plurality of stable magnetic states. The PEL and free and pinned layers each has a perpendicular magnetic anisotropy energy greater than its out-of-plane demagnetization energy. The SO active layer(s) are adjacent to the free layer, carry a current in-plane and exert a SO torque on the free layer due to the current.

Abstract: A magnetic junction and method for providing the magnetic junction are described. The method includes providing a pinned layer, a nonmagnetic spacer layer and a free layer switchable between stable magnetic states. The nonmagnetic spacer layer is between the pinned and free layers. Providing the pinned layer and/or providing the free layer includes cooling a portion of the magnetic junction, depositing a wetting layer while the portion of the magnetic junction is cooled, oxidizing/nitriding the wetting layer and depositing a boron-free magnetic layer on the oxide/nitride wetting layer. The portion of the magnetic junction is cooled to within a temperature range including temperature(s) not greater than 250 K. The wetting layer has a thickness of at least 0.25 and not more than three monolayers. The wetting layer includes at least one magnetic material. The boron-free magnetic layer has a perpendicular magnetic anisotropy energy greater than an out-of-plane demagnetization energy.

Abstract: A magnetic device and method for providing the magnetic device are described. The magnetic device includes magnetic junctions and spin-orbit interaction (SO) active layer(s). Each magnetic junction includes free and pinned layers separated by a nonmagnetic spacer layer. The pinned layer has a perpendicular magnetic anisotropy (PMA) energy greater than an out-of-plane demagnetization energy. The pinned layer includes a magnetic barrier layer between a magnetic layer and a high PMA layer including at least one nonmagnetic component. The magnetic barrier layer includes Co and at least one of Ta, W and Mo. The magnetic barrier layer is for blocking diffusion of the nonmagnetic component. The SO active layer(s) are adjacent to the free layer. The SO active layer(s) carry a current in-plane and exert a SO torque on the free layer due to the current. The free layer is switchable between stable magnetic states using the SO torque.

Abstract: A magnetic junction, a memory using the magnetic junction and method for providing the magnetic junction are described. The magnetic junction resides on a substrate and is usable in a magnetic device. The magnetic junction includes a reference layer, a nonmagnetic spacer layer and a M-containing oxide layer adjacent to the free layer. M includes at least one of Ti, Al, Hf, Zr, Mo, V and Nb. The free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. The nonmagnetic spacer layer is between the reference layer and the free layer. The free layer is between the nonmagnetic spacer layer and the M-containing oxide layer.

Abstract: A magnetic device and method for providing the magnetic device junction are described. The magnetic device includes magnetic junctions and spin-orbit interaction (SO) active layer(s). The magnetic junction includes a pinned layer, a perpendicular enhancement layer (PEL), an insertion layer between the pinned layer and PEL, a free layer and a nonmagnetic spacer layer between the PEL and free layer. The insertion layer includes at least one magnetic material and at least one high crystallization temperature nonmagnetic material. The PEL is between the insertion layer and the nonmagnetic spacer layer. The free layer is switchable between a plurality of stable magnetic states. The PEL and free and pinned layers each has a perpendicular magnetic anisotropy energy greater than its out-of-plane demagnetization energy. The SO active layer(s) are adjacent to the free layer, carry a current in-plane and exert a SO torque on the free layer due to the current.

Abstract: A method for providing magnetic junctions is described. Each magnetic junction includes a free layer. A first portion of a stack for the magnetic junctions is provided. The first portion of a stack includes magnetic layer(s) for the free layer. A hard mask is provided. The hard mask covers a part of the first portion of the stack corresponding to the magnetic junctions. The hard mask includes aperture(s) exposing a second part of the first portion of the stack corresponding to spacing(s) between the magnetic junctions. The spacing(s) are not more than fifty nanometers. The second part of the first portion of the stack is etched. A remaining part of the first portion of the stack forms a first portion of each magnetic junction. This first portion of each magnetic junction includes the free layer. A second portion of the stack for the magnetic junctions is also provided.

Abstract: A magnetic junction and method for providing the magnetic junction are described. The magnetic junction resides on a substrate and is usable in a magnetic device. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, a free layer, an oxide layer and at least one oxygen blocking layer. The free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. The nonmagnetic spacer layer is between the pinned layer and the free layer. The oxide layer is adjacent to the free layer. The free layer is between the nonmagnetic spacer layer and the oxide layer. The oxygen blocking layer(s) has a position selected from adjacent to the oxide layer and adjacent to the pinned layer. In some aspects, the magnetic junction may also include an oxygen adsorber layer and/or a tuning layer.

Abstract: A magnetic device and method for providing the device are described. The magnetic device includes magnetic junction(s) and spin-orbit interaction active layer(s) adjacent to the magnetic junction free layer(s). The magnetic junction includes free and pinned layers separated by a nonmagnetic spacer layer. The free layer is switchable between stable magnetic states. Providing the pinned and/or free layer(s) includes providing a magnetic layer including a glass-promoting component, providing a sacrificial oxide on the magnetic layer, providing a sacrificial layer on the sacrificial oxide and performing anneal(s) of the magnetic layer, the sacrificial oxide layer and the sacrificial layer at anneal temperature(s) greater than 300 degrees Celsius and not exceeding 475 degrees Celsius. The magnetic layer is amorphous as-deposited but is at least partially crystallized after the anneal(s). The sacrificial layer includes a sink for the glass-promoting component.

Abstract: A magnetic device and method for providing the magnetic device are described. The magnetic device includes magnetic junctions and spin-orbit interaction (SO) active layer(s). Each magnetic junction includes free and pinned layers separated by a nonmagnetic spacer layer. The pinned layer has a perpendicular magnetic anisotropy (PMA) energy greater than an out-of-plane demagnetization energy. The pinned layer includes a magnetic barrier layer between a magnetic layer and a high PMA layer including at least one nonmagnetic component. The magnetic barrier layer includes Co and at least one of Ta, W and Mo. The magnetic barrier layer is for blocking diffusion of the nonmagnetic component. The SO active layer(s) are adjacent to the free layer. The SO active layer(s) carry a current in-plane and exert a SO torque on the free layer due to the current. The free layer is switchable between stable magnetic states using the SO torque.

Abstract: A magnetic junction, a memory using the magnetic junction and method for providing the magnetic junction are described. The magnetic junction includes a pinned layer, a perpendicular enhancement layer (PEL), an insertion layer between the pinned layer and PEL, a free layer and a nonmagnetic spacer layer between the PEL and free layer. The insertion layer includes at least one magnetic material and at least one high crystallization temperature nonmagnetic material. The PEL is between the insertion layer and the nonmagnetic spacer layer. The free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. The PEL and free and pinned layers each has a perpendicular magnetic anisotropy energy greater than its out-of-plane demagnetization energy.

Abstract: A magnetic junction and method for providing the magnetic junction are described. The magnetic junction includes free and pinned layers separated by a nonmagnetic spacer layer. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. Providing the pinned and/or free layer(s) includes providing a magnetic layer including a glass-promoting component, providing a sacrificial oxide layer on the magnetic layer, providing a sacrificial layer on the sacrificial oxide layer and performing at least one anneal of the magnetic layer, the sacrificial oxide layer and the sacrificial layer at anneal temperature(s) greater than 300 degrees Celsius and not exceeding 475 degrees Celsius. The magnetic layer is amorphous as-deposited but is at least partially crystallized after the anneal(s). The sacrificial layer includes a sink for the glass-promoting component. The sacrificial layer and the sacrificial oxide layer are removed after the anneal(s).

Abstract: A magnetic junction and method for providing the magnetic junction are described. The magnetic junction resides on a substrate and is usable in a magnetic device. The magnetic junction includes free and pinned layers separated by a nonmagnetic spacer layer. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The free layer has a free layer perpendicular magnetic anisotropy energy greater than a free layer out-of-plane demagnetization energy. The free layer includes a [CoxFeyBz]uMot layer, where u+t=1, x+y+z=1 and u, t, x, y and z are each nonzero. The [CoxFeyBz]uMot layer has a perpendicular magnetic anisotropy energy greater than its out-of-plane demagnetization energy.

Abstract: A magnetic junction and method for providing the magnetic junction are described. The magnetic junction resides on a substrate and is usable in a magnetic device. The magnetic junction includes free and pinned layers separated by a nonmagnetic spacer layer. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The free layer has a free layer perpendicular magnetic anisotropy energy greater than a free layer out-of-plane demagnetization energy. The free layer includes a [CoxFeyBz]uMot layer, where u+t=1, x+y+z=1 and u, t, x, y and z are each nonzero. The [CoxFeyBz]uMot layer has a perpendicular magnetic anisotropy energy greater than its out-of-plane demagnetization energy.